Untitled
Abstract: No abstract text available
Text: FTE512S8N 4 Megabit CMOS EEPROM DESCRIPTION: The FTE512S8N is a 512K X 8 high-density, low-power EEPROM module comprised of four ceramic 128K X 8 monolithic EEPROM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on a co-fired ceramic substrate
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Original
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PDF
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FTE512S8N
FTE512S8N
600-mil-wide,
32-pin
250ns
|
Memory
Abstract: FTE512S8N
Text: FTE512S8N 4 Megabit CMOS EEPROM DESCRIPTION: The FTE512S8N is a 512K X 8 high-density, low-power EEPROM module comprised of four ceramic 128K X 8 monolithic EEPROM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on a co-fired ceramic substrate
|
Original
|
PDF
|
FTE512S8N
FTE512S8N
600-mil-wide,
32-pin
250ns
Memory
|
Untitled
Abstract: No abstract text available
Text: FORCE Technologies 4 Megabit CMOS EEPROM FTE512S8N DESCRIPTION: The FTE512S8N is a 512K X 8 high-density, low-power EEPROM module comprised of four ceramic 128K X 8 monolithic EEPROM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface mounted on a co-fired ceramic substrate
|
Original
|
PDF
|
FTE512S8N
600-mil-wide,
32-pin
250ns
|