Endress Hauser FTC 580
Abstract: Endress Hauser FTC 380 ftc 260 Endress Hauser FTC 580 FTC 380 manual FTC262 transistor tip 1050 endress hauser counter MINICAP FTC260
Text: Technical Information TI 287F/00/en Capacitive Limit Detection minicap FTC 260, FTC 262 Compact switch for limit detection with active build-up compensation No calibration necessary Version available for dust explosion areas Applications Minicap is designed for limit detection
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287F/00/en
FTC262
D-79574
99/MTM
287F/00/en/01
Endress Hauser FTC 580
Endress Hauser FTC 380
ftc 260
Endress Hauser
FTC 580
FTC 380 manual
FTC262
transistor tip 1050
endress hauser counter
MINICAP FTC260
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KCLP17
Abstract: KCLP20 S7000 X3512
Text: TECHNICAL DEPT. Reflectors Test Report Via Monfalcone 41 20092 Cinisello Balsamo Milano – Italy Tel. +39 0266013695 – Fax +39 0266013500 KCLP series REFLECTORS for Lambertian KCLP Series • • • High efficiency Available in 2 different beams Ø 17mm and Ø 20mm Standard
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2.1 amplifier circuit diagram
Abstract: 8 pins IC LF 353 n LF-DIODE diode S6 diode S6 39 cd 471 capacitor CD Laser pickup CD Laser pickup focus tracking electronic component dates with photo philips laser pickup
Text: INTEGRATED CIRCUITS DATA SHEET TZA1015 Data amplifier and laser supply circuit for CD and read-only optical systems HDALAS Product specification Supersedes data of 1998 Sep 09 File under Integrated Circuits, IC01 1999 Aug 19 Philips Semiconductors Product specification
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TZA1015
TZA1015
545002/03/pp20
2.1 amplifier circuit diagram
8 pins IC LF 353 n
LF-DIODE
diode S6
diode S6 39
cd 471 capacitor
CD Laser pickup
CD Laser pickup focus tracking
electronic component dates with photo
philips laser pickup
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATION AMPLIFIER MODULE AMS1000-2600 FEATURE LIST • 2x500W into 2Ω @ 1% THD. 900W BTL into 4Ω @ 1% THD. Patented AMS Adaptive Modulation Servo amplifier technology. Almost flat THD versus frequency plot.
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AMS1000-2600
2x500W
115dB
AMS1000
SE-163
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tza1033
Abstract: footprint LQFP208 reflow soldering hall effect ic 6838 TZA1030 SAA7811 HDR62 spindle and VCM motor controller 80C51 IEC958 smd diode se p5
Text: INTEGRATED CIRCUITS DATA SHEET SAA7811HL Single-chip DVD-ROM Preliminary specification File under Integrated Circuits, IC22 1999 Oct 05 Philips Semiconductors Preliminary specification Single-chip DVD-ROM SAA7811HL FEATURES Host interface • Enhanced Integrated Drive Electronics IDE Advanced
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SAA7811HL
12-byte
545006/01/pp20
tza1033
footprint LQFP208 reflow soldering
hall effect ic 6838
TZA1030
SAA7811
HDR62
spindle and VCM motor controller
80C51
IEC958
smd diode se p5
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NORP12
Abstract: RELAY 12V 12v relay VR1 100K preset PRESET VR1 50K vr1 2.2k NORP-12 2N3053 light dependent resistors IN4148 12V
Text: 1502323816 Issued March 1997 Data pack F Light dependent resistors Data Sheet NORP12 RS stock number 651-507 NSL19-M51 RS stock number 596-141 Two cadmium sulphide cdS photoconductive cells with spectral responses similar to that of the human eye. The cell resistance falls with increasing light intensity. Applications include smoke detection, automatic
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NORP12
NSL19-M51
2N3053*
RELAY 12V
12v relay
VR1 100K preset
PRESET VR1 50K
vr1 2.2k
NORP-12
2N3053
light dependent resistors
IN4148 12V
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FTC 580
Abstract: alpha detector diode smd SA2 FTC 380 manual TZA1029 QFP44 TZA1020 EFM noise reduction CAWR
Text: INTEGRATED CIRCUITS DATA SHEET TZA1029 Pre-amplifier for CD-RW systems Product specification Supersedes data of 2000 Oct 30 File under Integrated Circuits, IC01 2000 Oct 31 Philips Semiconductors Product specification Pre-amplifier for CD-RW systems TZA1029
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TZA1029
753503/02/pp36
FTC 580
alpha detector
diode smd SA2
FTC 380 manual
TZA1029
QFP44
TZA1020
EFM noise reduction
CAWR
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Untitled
Abstract: No abstract text available
Text: SF2094B • • • • Low Insertion Loss 5.0 X 7.0 mm Surface-Mount Case Differential Input and Output or Single Ended Input and Output Complies with Directive 2002/95/EC RoHS Absolute Maximum Ratings Rating 380.00 MHz SAW Filter Pb Value Units Maximum Incident Power in Passband
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SF2094B
2002/95/EC
SMP-03
MIL-STD-883
SF2094B
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FTC 580
Abstract: diode smd SA2 TZA1020 microcontroller fingerprint UA 471 CN Philips TZA1020 EFM noise reduction C4727 PHILIPS CD 245 TZA1020HP
Text: INTEGRATED CIRCUITS DATA SHEET TZA1020; TZA1020A Pre-amplifiers for CD-RW systems Product specification File under Integrated Circuits, IC01 2000 Oct 30 Philips Semiconductors Product specification Pre-amplifiers for CD-RW systems TZA1020; TZA1020A CONTENTS
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TZA1020;
TZA1020A
753503/01/pp36
FTC 580
diode smd SA2
TZA1020
microcontroller fingerprint
UA 471 CN
Philips TZA1020
EFM noise reduction
C4727
PHILIPS CD 245
TZA1020HP
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1N5612
Abstract: No abstract text available
Text: m 580 Pleasant St. W atertown, MA 02472 Micmsemi Watertown, MA M FAX: 617 924-1235 ftc»tirg5 Pwwraiiy Teptoofofly Features 1500 Watts for 1 ms Pulse Power Capability Small Physical Size Designed for MIL-STD-704A Applications 1N5610 1N5611 1N5612, 1N5613
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MIL-STD-704A
1N5610
1N5611
1N5612,
1N5613
MIL-S-19500/434
MSC1061
N5610
1N5612
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Silonex
Abstract: NSL-4460 NSL-4450 NSL-4470 photocell 4470 FTC 580 NSL-4440 NSL-4400 NSL447 N2150
Text: SILONEX INC a a s s a ? ! ociaoan □ 23E D SILONEX £ 1 W ATT PH O TO C O N D U C TIVE CELLS NSL-4400 SERIES FEATURES • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on demand* - Plastic Encapsulated
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NSL-4460
Abstract: NSL-4470 NSL-4450 FTC 580 e/NSL-801
Text: SILONEX INC 23E BSSS571 GDQGa'iT □ SILONEX; 1 W A T T PHOTOCONDUCTIVE CELLS NSL-4400 SERIES FEATURES • High Power Dissipation Capability @ 25° C: 1000 mW - Hermetically Sealed 500 mW - Plastic Encapsulated 750 mW on demand* - Plastic Encapsulated • Maximum Operating Voltage:
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BSSS571
NSL-4400
/LL40\
NSL-4460
NSL-4470
NSL-4450
FTC 580
e/NSL-801
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1n914 equivalent
Abstract: Y341 IT 341 N 341 AB 1N4148 1N914 TSC341 circuit for logic gates diode 331 321 CJ
Text: 580 Pleasant Street Watertown, M A 02172 617 924-9280 TSC341 Multi-Function Gates L /7 3 5 • Dual 2-Wide, 2-input AND-OR-tnvert • Dual Expandable  N D -N O R Features G e n e ra l Descriptions 341 341 • PR O VID ES COM PLEX FUNCTION WITH LOW SUPPLY D R A IN
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TSC341
WatertowfnMAtro2i72
1N4148
20-volt
1N914
1n914 equivalent
Y341
IT 341
N 341 AB
TSC341
circuit for logic gates
diode 331
321 CJ
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pic 817
Abstract: dual monostable multivibrator TSC342 342 multivibrator pic tachometer circuit rda dod I 342 1N914 HMF CAPACITOR silicon d
Text: TSC342 D u a l M o n o sta b le M ultivib rator 580 Pleasant Street Watertown, MA 02172 817 924-9280 LFTBS Features ♦ G e n e ra l Description C O M PLEM EN TA R Y O UTPUT PU LSES O UTPUT WIDTH IN DEPENDENT OF T R IG G E R PULSE WIDTH TIM ING RA N G E OF 100 NANOSECONDS TO
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TSC342
pic 817
dual monostable multivibrator
TSC342
342 multivibrator
pic tachometer circuit
rda dod
I 342
1N914
HMF CAPACITOR
silicon d
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Untitled
Abstract: No abstract text available
Text: UES4505S UES4510S UES4515S RECTIFIERS High Efficiency, 45A, 50-150V FEATURES DESCRIPTION • Economical Convenient TO-3P Package The U ES4505S Series, in the econom ical, convenient TO-3P package, is specifically designed for operation in power switching circu its to frequencies in excess of 100kHz.
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UES4505S
UES4510S
UES4515S
0-150V
ES4505S
100kHz.
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USD4545S
Abstract: USD4530S USD4540S TO-3P package
Text: POWER SCHOTTKY RECTIFIERS USD4530S USD4540S USD4545S 90A Pk, Up to 45V DESCRIPTION The U SD 4530S Series, in the economical, convenient TO-3P package, is specifically designed for operation in power switching circuits to frequencies in excess of 100kHz The very low forward voltage and low recovered charge translates to extremely high
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USD4545S
USD4530S
100kHz
USD4540S
USD4545S
4000pF
TO-3P package
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diode with PIV 200
Abstract: rectifier bridge 100v 5a power diode with piv of 100v
Text: RECTIFIER ASSEMBLIES 697, 698 SERIES Single Phase Bridges,7.5 Amp, Standard and Fast Recovery FEATURES DESCRIPTION • • • • • • • These miniature molded high-current single-phase bridges are designed for uni versal application in power supplies. One
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500ns
500ns
diode with PIV 200
rectifier bridge 100v 5a
power diode with piv of 100v
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IEM209
Abstract: NDL5055 LD-7732
Text: N E C ELECTRONICS INC b2E D • L.42752S 0030171 MT1 H N E C E P R E L IM IN A R Y DATA SH E ET N EC LASERDIODE NDL5055 ELECTRON DEVICE 1 550 nm OPTICAL FIBER C O M M U N IC A T IO N S InGaAsP DC-PBH LA SER DIODE DESCRIPTION NDL5055 is a 1 550 nm laser diode especially designed for optical data communications.
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b42752S
NDL5055
NDL5055
61Spa
b427SES
0D3A172
IEM209
LD-7732
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j510
Abstract: RCA-CD4094B CD4094B
Text: CD4094B Types 4 CMOS 8-Stage Shift-and-Store Features: Bus Register High-Voltage Types 2 0 -V o lt Rating The RCA-CD4094B is an 8-stage serial shift register having a storage latch associated w ith each stage fo r strobing data fro m the serial in p u t to parallel buffered 3-state o u t
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CD4094B
RCA-CD4094B
4094B
j510
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QP-106
Abstract: j 6806 Cross Reference QP-104 T10M
Text: Page 1 o f 1 Product Datasheet —Quickie Receptacles £ FC hon Fe ÏFCI Basics* [ High speed Product catalog Latest Nevus 1About FC f f v“A i Employment ja Round Conductor, Flat Cable IDC Connectors ^Custom er drawing * Product specification h . h .
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2SK2285
Abstract: F15F6N
Text: 6 0 V v U - X M 9 -M 0 S F E T 60V SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2285 F15F6N 60v 15a I f i d ’l l A bsolute Maximum Ratings 12 s m Item f* # s . m S to ra g e T e m p e ra tu re -?• -V C h a n n e l T e m p e ra tu re Y V A ' y
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60VvU-X
F15F6N)
60V15A
FTO-220
S1/100
10//s,
2SK2285
00022DD
2SK2285
F15F6N
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2SK2185
Abstract: No abstract text available
Text: V X - ï ï v ' J - X A 7 -M 0 S F E T VX-1I SERIES POWER MOSFET • W f é ' OU T L I N E D IM E N S IO N S 2SK2185 CF5F50VX2 500v 5 a ■ R A T IN G S ■ A b s o lu te M a x im u m R a tin g s Jfi 11 n v = -2 5 °0 lïLÎ *ï Sym bol Item HA ft iiC o n d itio n s
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2SK2185
CF5F50VX2)
F5F50VX2)
2SK2185
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DT1X
Abstract: No abstract text available
Text: OMS410 OMS410A 0MS51Q 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE T h r e e P ha s e . 100 Volt, 15 To 45 A m p B r i d g e With C u rre n t A n d T e m p e ra tu re S ensin g In A L o w P r o f i l e P a c k a g e FEATURES
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OMS410
OMS410A
0MS51Q
DT1X
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2SK150
Abstract: ic pu 1501 TRANSISTOR b 772 p 2SK1501
Text: MOS FIELD EFFECT POWER TRANSISTOR 2S K 1501, 1501-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1501 is N - c h a n n e l M O S F ie ld Effect T r a n s is t o r PACKAGE DIMENSIONS in millimeters d e s ig n e d f o r h ig h v o lt a g e s w it c h in g a p p lic a tio n s.
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1501-Z
2SK1501
2SK150
ic pu 1501
TRANSISTOR b 772 p
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