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    FSYC264R Search Results

    FSYC264R Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FSYC264R Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC264R1 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Original PDF
    FSYC264R1 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC264R3 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Original PDF
    FSYC264R3 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC264R3 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC264R4 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Original PDF
    FSYC264R4 Fairchild Semiconductor Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF
    FSYC264R4 Intersil Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Original PDF

    FSYC264R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    la 4548

    Abstract: 1E14 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
    Text: FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 34A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSYC264D, FSYC264R la 4548 1E14 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3

    VDMOS reliability testing report

    Abstract: No abstract text available
    Text: FSYC264D, FSYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs [ /Title The Discrete Products Operation of Intersil has developed a FSYC series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSYC264D, FSYC264R VDMOS reliability testing report

    1E14

    Abstract: 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3
    Text: FSYC264D, FSYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs December 2000 • 34A, 250V, rDS ON = 0.080Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    Original     		PDF FSYC264D, FSYC264R 36MeV/mg/cm2 MIL-PRF-19500, MIL-PRF-19500. 1E14 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3

    1E14

    Abstract: 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3 Rad Hard in Fairchild for MOSFET
    Text: FSYC264D, FSYC264R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSYC264D, FSYC264R 1E14 2E12 FSYC264D FSYC264D1 FSYC264D3 FSYC264R FSYC264R1 FSYC264R3 Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FSYC264D, FSYC264R TM Data Sheet February 2001 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs • 34A, 250V, rDS ON = 0.080Ω The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.


    Original     		PDF FSYC264D, FSYC264R

    POWER VDMOS

    Abstract: No abstract text available
    Text: FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 34A, 250V, Tqs ^o N = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSYC264D, FSYC264R FSYC264R POWER VDMOS

    Untitled

    Abstract: No abstract text available
    Text: FSYC264D, FSYC264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs juiy 1998 Features Description • 34A, 250V, r[js ON = 0.080£2 T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s


    OCR Scan     		PDF FSYC264D, FSYC264R 36MeV/mg/cm2