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    Abstract: No abstract text available
    Text: GaN 600V SBD < m Nihon Inter Electronics Corporation Gallium Nitride 600V SBD Vr-V Characteristics H //// -PFC Circuit Applied Reverse Voltage [V] -Reduce VF rise due to current collapse to below 20% Recovery waveform GaN vs Si Si GaN FSU05A60 -FRD/5A/600V


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    PDF FSU05A60 -FRD/5A/600V) 40ns/div FSA06A60 GaN-SBD/6A/600V) FSA04B60 O-220 FSA06B60