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    FS-100 R 12 Search Results

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    FS-100 R 12 Price and Stock

    Infineon Technologies AG FS100R12KT4GBOSA1

    IGBT MOD 1200V 100A 515W
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    DigiKey FS100R12KT4GBOSA1 Tray 36 1
    • 1 $144.21
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    Avnet Americas FS100R12KT4GBOSA1 Tray 15 Weeks 10
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    Verical FS100R12KT4GBOSA1 2 1
    • 1 $143.83
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    Arrow Electronics FS100R12KT4GBOSA1 2 15 Weeks 1
    • 1 $143.83
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    Newark FS100R12KT4GBOSA1 Bulk 12 1
    • 1 $166.65
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    Rochester Electronics FS100R12KT4GBOSA1 15 1
    • 1 $162.94
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    EBV Elektronik FS100R12KT4GBOSA1 16 Weeks 10
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    Infineon Technologies AG FS100R12W2T7PBPSA1

    LOW POWER EASY AG-EASY2B-711
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    DigiKey FS100R12W2T7PBPSA1 Tray 19 1
    • 1 $78.39
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    Avnet Americas FS100R12W2T7PBPSA1 Tray 14 Weeks 18
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    Mouser Electronics FS100R12W2T7PBPSA1 21
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    Rochester Electronics FS100R12W2T7PBPSA1 288 1
    • 1 $91.45
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    Infineon Technologies AG FS100R12N2T7B15BPSA1

    LOW POWER ECONO
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    DigiKey FS100R12N2T7B15BPSA1 Tray 14 1
    • 1 $106.85
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    Avnet Americas FS100R12N2T7B15BPSA1 Tray 14 Weeks 15
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    Mouser Electronics FS100R12N2T7B15BPSA1 32
    • 1 $115.48
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    Newark FS100R12N2T7B15BPSA1 Bulk 15 1
    • 1 $102.28
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    Rochester Electronics FS100R12N2T7B15BPSA1 15 1
    • 1 $115.05
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    Infineon Technologies AG FS100R12PT4BOSA1

    IGBT MOD 1200V 135A 500W
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    DigiKey FS100R12PT4BOSA1 Tray 12 1
    • 1 $164.94
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    Verical FS100R12PT4BOSA1 7 1
    • 1 $158.14
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    Arrow Electronics FS100R12PT4BOSA1 7 15 Weeks 1
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    IBS Electronics FS100R12PT4BOSA1 1
    • 1 $187.524
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    Infineon Technologies AG FS100R12KE3BOSA1

    IGBT MOD 1200V 140A 480W
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    DigiKey FS100R12KE3BOSA1 Tray 11 1
    • 1 $150.48
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    Newark FS100R12KE3BOSA1 Bulk 4 1
    • 1 $169.75
    • 10 $152.56
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    Rochester Electronics FS100R12KE3BOSA1 107 1
    • 1 $171.14
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    Find more FS-100 R 12 price and stock on Findchips.com

    FS-100 R 12 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FS100R12KE3 Eupec IGBT Inverter Module Original PDF
    FS100R12KE3 Eupec TRANS IGBT MODULE N-CH 1200V 140A Original PDF
    FS100R12KE3 Infineon Technologies TRANS IGBT MODULE N-CH 1200V 140A Original PDF
    FS100R12KE3_B3 Eupec IGBT Inverter Module Original PDF
    FS100R12KE3_B3 Eupec TRANS IGBT MODULE N-CH 1200V 140A Original PDF
    FS100R12KE3BOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE 1200V 100A Original PDF
    FS100R12KS4 Eupec IGBT Inverter Module Original PDF
    FS100R12KS4 Infineon Technologies TRANS IGBT MODULE N-CH 1200V 130A Original PDF
    FS100R12KS4BOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE VCES 600V 100A Original PDF
    FS100R12KT3 Eupec IGBT-Module Original PDF
    FS100R12KT3 Infineon Technologies TRANS IGBT MODULE N-CH 1200V 140A Original PDF
    FS100R12KT3BOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE VCES 600V 100A Original PDF
    FS100R12KT4 Infineon Technologies IGBT Modules up to 1200V SixPACK; Package: AG-ECONO2-1; IC (max): 100.0 A; VCE(sat) (typ): 1.75 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK 2; Original PDF
    FS100R12KT4_B11 Infineon Technologies IGBT Modules up to 1200V SixPACK; Package: AG-ECONO2-1; IC (max): 100.0 A; VCE(sat) (typ): 1.75 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK 2; Original PDF
    FS100R12KT4B11BOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT FS100R12KT4B11BOSA1 Original PDF
    FS100R12KT4BOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE VCES 600V 100A Original PDF
    FS100R12KT4G Infineon Technologies IGBT Modules up to 1200V SixPACK; Package: AG-ECONO3-1; IC (max): 100.0 A; VCE(sat) (typ): 1.75 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK 3; Original PDF
    FS100R12KT4G_B11 Infineon Technologies IGBT Modules up to 1200V SixPACK; Package: AG-ECONO3-1; IC (max): 100.0 A; VCE(sat) (typ): 1.75 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK 3; Original PDF
    FS100R12KT4GB11BOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE VCES 600V 100A Original PDF
    FS100R12KT4GBOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - IGBT MODULE VCES 600V 100A Original PDF

    FS-100 R 12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fs100r12ks4

    Abstract: No abstract text available
    Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 100 R 12 KS4 Vorläufige Daten Preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage


    Original     		PDF FS100R12KS4, fs100r12ks4

    1S1555

    Abstract: 1S1553 1s1555 diode 1SS110 1N4148V 1SS265 1S1553/1S1555 1SS133 1N4148 1SS176
    Text: LESHAN RADIO COMPANY, LTD. 1N4148 1S SERIES 1SS SERIES SWITCHING DIODES 1. SWITCHING DIODES ABSOLUTE MAXIMUM RATINGS TYPE V RM V 1N4148 100 1S1553 70 1S1555 35 1SS133 90 1SS176 35 1SS270 30 V R (V) IF(mA) IO(mA) I FS(mA)1 Sec P(mw) 75 60 30 80 30 30 450 300


    Original     		PDF 1N4148 1N4148 1S1553 1S1555 1SS133 1SS176 1SS270 DO-35 DO-34 1s1555 diode 1SS110 1N4148V 1SS265 1S1553/1S1555

    Si53303

    Abstract: No abstract text available
    Text: Si53303 D UAL 1:5 L OW J I T T E R B UFFER / L EVEL T RANSLATOR Features         10 differential or 20 LVCMOS outputs Ultra-low additive jitter: 100 fs rms Wide frequency range: 1 to 725 MHz Any-format input with pin selectable


    Original     		PDF Si53303 44-QFN

    Si53314

    Abstract: in 5007
    Text: Si53314 1 : 6 L O W J IT TE R U N I V E R S A L B U FF E R / L E V E L T R A N S L A T O R W IT H 2 : 1 I N P U T M U X A N D I N D I V I D U A L O E < 1 . 2 5 G H Z Features        6 differential or 12 LVCMOS outputs  Ultra-low additive jitter: 100 fs rms 


    Original     		PDF Si53314 32tial in 5007

    Si53320

    Abstract: si5332
    Text: Si53320 1:5 L O W J I T T E R LVPECL C LOCK B UFFER W I T H 2:1 I NPUT M UX Features         5 LVPECL outputs  Ultra-low additive jitter: 100 fs rms  Wide frequency range: 1 to 725 MHz  Input compatible with LVPECL, LVDS, CML, HCSL, LVCMOS


    Original     		PDF Si53320 20-TSSOP MC100LVEP14, SY100EP14U, MAX9310 si5332

    FF 150 R 1200 kf igbt

    Abstract: FF 50 R 12 KF2 FZ 300 R 06 KL IGBT module FZ circuit of six pack module igbt FS-100 r 12 FZ 75 IGBT FZ 1200 IGBT FZ 600 IGBT module FZ 1200
    Text: IGBT Standard Modules Type VCES V IGBT-Standardmodule IC A ICRM A VCEsat V ton µs ts µs tp = 1 ms tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. tf µs RthJC tvj max °C/W °C tvj=25°C per arm typ. Dual modules n FF 15 R 12 KF 1200 15 30 3,0 0,4 0,50 0,20


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: [AKD4617-A] AKD4617-A AK4617 Evaluation Board Rev.0 GENERAL DESCRIPTION The AKD4617-A is an evaluation board for AK4617, which is a 24bit CODEC including 2ch ADC and 12ch DAC. The control settings of this board may be controlled via USB port, allowing for easy A/D and


    Original     		PDF AKD4617-A] AKD4617-A AK4617 AKD4617-A AK4617, 24bit AK4617 AK4118A 10piAVSS

    transistor 184

    Abstract: No abstract text available
    Text: FS 100 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften 1E lectrical properties Hochstzulässige W erte V ces Maximum rated values 600 V 100 A Ic Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,052 R th J C DC, pro Zweig / per arm


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FS 100 R 06 KF 3 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 100 A lc Therm ische Eigenschaften Therm al properties 0,047 :'C /W Rthjc DC, pro Baustein / per module DC, pro Zweig / per arm 0,280 C/W


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FS 25 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 600 V 25 A 50 A 100 W ge 20 V Inversdiode Inverse diode LU 20 V Elektrische Eigenschaften Electrical properties Höchstzulässige W erte


    OCR Scan     		PDF 34G32R7

    Untitled

    Abstract: No abstract text available
    Text: BNC 75 ohm PCB Receptacles Fig. 1 Standard Height BNC Printed Circuit Board Right Angle Bulkhead Receptacles * .200 .500 12.7 P Amphenol R <5.1). I 1 .200 — (5.1) .468(11.9) 400 - ( 10 .2 ) - L_ fS G S 100 .079(2.0) (2 .9 ) < *» *•* 035(0.9) Ofa 2 p la c w


    OCR Scan     		PDF 1-71043-1010A 31-5329-72RFX

    f12n10L

    Abstract: f12n10
    Text: in te fs il RFP12N10L D ata S h e e t J u ly 1999 12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET F ile N u m b e r Features • 12A, 100 V These are N-Channel enhancem ent mode silicon gate power field effect transistors specifically designed for use


    OCR Scan     		PDF RFP12N10L TA09526. RFP12N10L 0-56mA AN7254 AN7260 75BVds f12n10L f12n10

    Untitled

    Abstract: No abstract text available
    Text: OßlbßOG Q0b3MEE 472 •* r a ANALOG ID E V IC ES 14-Bit, 65 MSPS Monolithic A/D Converter PRELIMINARY TECHNICAL DATA FEATURES 65 MSPS Guaranteed Sample Rate 40 MSPS Version Available Sampling jitter < 300 fs 100 dB Multi-tone SFDR Single +5V Supply 1.4 W Power Dissipation


    OCR Scan     		PDF 14-Bit, AD9042 AD6640 AD6644 AD6644 0Dk343D AD6644AST

    MJ10047

    Abstract: mj10041 MJ10044 Transistor C 5198 0DS1 MJ1004 Motorola AN222A
    Text: It 6 3 6 7 2 54 MOTOROLA SC »e | b3l=?SS4 C X S T R S / R F . DOfiDTìS 96D 7 | 80995 T- ?-fs MJ10041 MJ10044 MJ10047 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 25, 50, and 100 A M P E R E - N P N S IL IC O N P O W E R D A R L IN G T O N T R A N S IS T O R 25 kVA EN E R G Y M A N A G EM EN T S E R IE S


    OCR Scan     		PDF b3b7254 Mi10041 J10044 J10047 MJ10041, MJ10044, MJ10047 MJE15028 2N2322 MJE15029' mj10041 MJ10044 Transistor C 5198 0DS1 MJ1004 Motorola AN222A

    6BJ6

    Abstract: Brimar
    Text: <B]< C u r r e n t E q u ip m e n t T y p e A - 4 MAX TYPE 6BJ6 A <0 t MINIATURE VARI-MU fs* 100 UTn R.F. PENTODE I E 7G Base T h e B R IM A R 6BJ6 is a m edium slo pe variable-m u R.F. Pentode de signed fo r use in d o m e stic rad io equ ip m e n t. It is p a rticu larly useful fo r car rad io and m obile


    OCR Scan     		PDF

    FS12-200

    Abstract: No abstract text available
    Text: TOLERANCE UNLESS SPECIFIED = , X X X = + / - .0 0 5 FS 12-200. D C 2 X X = + /- .0 1 5 F R A C T IO N S ^ + /- .032 W W W = YEAR, WEEK X X X = SITECODE PRODUCTION TESTS TURNS RATI 0 = 100 % 1 -2 675 TO 815 DC RESISTANCE ( 3 - 4 ) 8 2 5 T O 9 70 ( 5 - 6 ) 2 .3 T O 3 .5


    OCR Scan     		PDF FS12-200. 30V/60HZ FS12-200

    Untitled

    Abstract: No abstract text available
    Text: 15.20 13.00 - -Q fs / & '0; o % >% > 10 d o' I I % 3.90 2.60 6.80 13.50 PCB LAYOUT (BOTTOM VIEW PC FILE NAME: MDE70SGS.DWG c o p y r ig h t 1998 by c u i s t a c k , in c . C > oi m o SPECIFICATIONS: RATING: 12VDC @ 1 A LIFE: 5 ,0 0 0 CYCLES MIN INSULATION RESISTANCE: 100 MOHM MIN @ 5 0 0 V DC


    OCR Scan     		PDF MDE70SGS 12VDC MDE-70SGS

    uf5404

    Abstract: HER103 HER106 HER108 UF4002 UF4003 UF4004 UF4006 UF4007 her3Q
    Text: RECTIFIER DIODES, Ultra Fast Recovery, Plastic Package ;i-iÍÍSitsí:?fs P a rt N um ber M a x im u m A ve ra g e R e c tifie d C u rre n t at T. I A m p s iM UF4001 UF4002 UF4003 55 UF4&04 UF4&Q5 In v e r s e V o ftag « i P IV (V o lts ) 50 100 200 400


    OCR Scan     		PDF UF4001 UF4002 UF4003 UF4004 UF4006 UF4007 UF540Ã UF5401 F5403 UF5404 HER103 HER106 HER108 UF4006 her3Q

    Untitled

    Abstract: No abstract text available
    Text: UNCO NTRO LLED DO CUM ENT 0 2 .4 0 REV, [ 0 0 .0 9 « A OJ1 t 2,80+0.20 [ 0,110=t 0,0 0 8 ] I n 0 .5 0 ±0.10 REFLOW PROFILE r l _ i 230 MAX. G 200 1/Ò LU rr. IM 125 1 100 LU 75 FS 1— 50 25 0 ~ 0 .1 0 E 0 .0 0 4 ] F 1 » J 0.15 EO.006] J 0,80 E0.031] 2 P LS J


    OCR Scan     		PDF LX2832SRC-TR

    DN6847

    Abstract: DN6847S
    Text: - 4 56 D N 6 8 4 7 //S E /yT E / S • * * 5 & fS V cc Ic c loUT Pd T 0pt T stu 0 f f ij f T M C ,E * 5 H - - 4 .5 V - 1 6 V 0 ffi^ T T L ^ M o s r „ - 2 5 ”C 18V 8m A 20m A 150m W —4 0 - t-100°C - 5 5 — + 125 V o H iiJ^ ;V T ^ -/ffiÌitF fclK (27kfl typ)


    OCR Scan     		PDF DN6847//SE/yTE/S 150mW DN6847S) DN6847/SE/TE DN6847 N6847S DN6847, 175Gauss -30/iA, DN6847S

    igbt power module FS 25 R 12 KF2

    Abstract: 25 R 1200 KF
    Text: IGBT modules Type VcES lc IcRM v CEsal. Ion ts t, RthJC DC per arm V= •v| = t»i = 25 -C, typ. 25 °C, typ. t,j = 25 °C, typ. t»i 1 ms tvj max O utline 25 °C, typ. V A A V us US us °c /w °c DF 100 R 12 KF-A FD 100 R 12 KF-K 1200 1200 100 100 200 200


    OCR Scan     		PDF

    221E

    Abstract: ne 3225 334e
    Text: A WIRE-WOUND CHIP INDUCTORS -FERRITE/OPEN TYPE 1210HS 3225 Ferrite Series (0.10-470 uH) Part Number 1210HS- 101E 1210HS- 121E 1210HS- 151E 1210HS- 181E 1210HS- 221E 1210HS- 271E 1210HS- 331E 1210HS- 391E 1210HS- 471E 1210HS- 561E 1210HS- 681E 1210HS- 821E


    OCR Scan     		PDF 1210HS 1210HS- 1210HS-101 221E ne 3225 334e

    1R2E

    Abstract: R12E R12-E 1210MS
    Text: A fcELM Part Number 1210MS- R12E FS 1210MS- R15E FS 1210MS- R18E FS 1210MS- R22E FS 1210MS- R27E FS 1210MS- R33E FS 1210MS- R39E FS 1210MS- R47E FS 1210MS- R56E FS 1210MS- R68E FS 1210MS- R82E FS 1210MS- 1R0E FS 1210MS- 1R2E FS 1210MS- 1R5E FS 1210MS- 1R8E FS


    OCR Scan     		PDF 1210MS 1210MS- 1R2E R12E R12-E 1210MS

    FZ 77 1000

    Abstract: IGBT FZ 1200 FZ 77 FF R 1200 FZ200
    Text: IGBT modules VcES IC R M lc v CEsal to n ts tf R th J C Wj ' l l i • DC V A '• i * 2 5 °C . ty p t., = 2 5 °C , ty p 'v, 2 5 °C , ly p p e r a rm V us us MS ° C /W °c tp = 1 ms •vi = 2 5 °C A ty p Dual modules FF 15 R 12 KF 1200 15 30 3 0.4 0.5


    OCR Scan     		PDF