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    FS S12 2 Search Results

    FS S12 2 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    64991-S12-3RLF Amphenol Communications Solutions 64991-S12-3RLF-GUIDE PIN 100 SHRD HDR Visit Amphenol Communications Solutions
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    FS S12 2 Price and Stock

    Siemens CFSS12200H

    SWITCH CFS 12 X 200 MM SHAFT
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    DigiKey CFSS12200H Box 1
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    Samtec Inc SFSS-12-28-G-04.00-S

    SINGLE ROW DISCRETE WIRE ASSEMBL
    Free Sample
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    DigiKey SFSS-12-28-G-04.00-S Bulk 1
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    Avnet Americas SFSS-12-28-G-04.00-S Bulk 1
    • 1 $7.51
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    Master Electronics SFSS-12-28-G-04.00-S
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    Sager SFSS-12-28-G-04.00-S 1
    • 1 $7.51
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    Samtec Inc SFSS-12-28-G-04.00-SR

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    DigiKey SFSS-12-28-G-04.00-SR Bulk 1
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    Avnet Americas SFSS-12-28-G-04.00-SR Bulk 1
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    Sager SFSS-12-28-G-04.00-SR 1
    • 1 $8.16
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    Samtec Inc SFSS-12-28-G-12.00-SR

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    DigiKey SFSS-12-28-G-12.00-SR Bulk 1
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    Avnet Americas SFSS-12-28-G-12.00-SR Bulk 1
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    Samtec Inc SFSS-12-28-G-08.00-D-NDS

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    DigiKey SFSS-12-28-G-08.00-D-NDS Bulk 1
    • 1 $13.58
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    Avnet Americas SFSS-12-28-G-08.00-D-NDS Bulk 1
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    Find more FS S12 2 price and stock on Findchips.com

    FS S12 2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE8500100

    Abstract: NE8500199 UM 3842 7486 gate
    Text: C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES TC = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB VDS Drain to Source Voltage • HIGH EFFICIENCY: 37% (PAE)


    Original     		PDF NE8500100 NE8500199 24-Hour NE8500100 NE8500199 UM 3842 7486 gate

    49570

    Abstract: MC-7856 MC7856G MC-7856G
    Text: CATV 22 dB PUSH-PULL AMPLIFIER MC-7856G OUTLINE DIMENSIONS Units in mm FEATURES • GALLIUM ARSENIDE ACTIVE DEVICES PACKAGE OUTLINE • LOW DISTORTION • LOW NOISE FIGURE (5.7 dB TYP at 860 MHz) • HIGH RELIABILITY (FIT = 125 at heat sink temperature of 100°C,


    Original     		PDF MC-7856G MC-7856 24-Hour 49570 MC7856G MC-7856G

    MC-7862 NEC

    Abstract: MC7862G MC-7862 MC-7862G 74760
    Text: CATV 18 dB POWER DOUBLER AMPLIFIER MC-7862G OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE • GALLIUM ARSENIDE ACTIVE DEVICES • LOW DISTORTION • LOW NOISE FIGURE (6.3 dB TYP at 860 MHz) • LOW DC CURRENT DRAW (355 mA TYP at 24 V) • HIGH RELIABILITY


    Original     		PDF MC-7862G MC-7862 24-Hour MC-7862 NEC MC7862G MC-7862G 74760

    Untitled

    Abstract: No abstract text available
    Text: SH57K73 MASK 8-bit Micro-controller with LCD Driver Features SH6502-based single chip 8-bit micro-controller Operation Voltage: 2.4V - 5.5V 2 Oscillation sources: - 32.768kHz Crystal - 4.1943MHz Internal PLL divided by 1, 2, 4, 8 MCU Operation Modes: - STOP Mode: MCU & PLL Off, 32.768kHz clock off


    Original     		PDF SH57K73 SH6502-based 768kHz 1943MHz 768kHz, 1943MHz/8,

    rf 315mhz sample circuit

    Abstract: MAX2640 181Noise
    Text: WIRELESS, RF, AND CABLE Jul 23, 2003 MAX2640 LNA Operates at 315MHz for Automotive Keyless Entry Applications The MAX2640 low-cost, ultra low-noise amplifier LNA was originally characterized over the 400MHz to 2500MHz range. The device has also proven useful at 315MHz for keyless entry applications. Testing has shown that the part


    Original     		PDF MAX2640 315MHz 400MHz 2500MHz 315MHz, 315MHz 30pcs. rf 315mhz sample circuit 181Noise

    SH57P90

    Abstract: s43 p60
    Text: SH57K92 Mask 8-bit Micro controller with LCD Driver Features SH6502-based single chip 8-bit micro-controller Operation Voltage: 2.4 - 5.5V 2 Oscillation sources: - 32.768kHz Crystal - 4.1943MHz divided by 1, 2, 4, 8 Internal PLL MCU Operation Modes: - STOP mode: MCU & PLL Off, 32.768kHz clock off


    Original     		PDF SH57K92 SH6502-based 768kHz 1943MHz 768kHz, 1943MHz/8, SH57P90 s43 p60

    VP15-00-3

    Abstract: marking NF5 pc8103 43251 UPC8103T c2b nec PC8102
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8102T RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM DESCRIPTION µPC8102T is a silicon monolisic integrated circuit designed as RF amplifier for 150 MHz to 330 MHz pager system. Due to 1 V supply voltage, this IC is suitable for low voltage pager system. The package is a 6 pin mini mold suitable


    Original     		PDF PC8102T PC8102T VP15-00-3 marking NF5 pc8103 43251 UPC8103T c2b nec PC8102

    4.1943MHZ

    Abstract: No abstract text available
    Text: SH57K83 MASK 8-bit Micro-controller with LCD Driver Features SH6502-based single chip 8-bit micro-controller Operation Voltage: 2.4V - 5.5V 2 Oscillation sources: - 32.768kHz Crystal - 4.1943MHz Internal PLL divided by 1, 2, 4, 8 MCU Operation Modes: - STOP Mode: MCU & PLL Off, 32.768kHz clock off


    Original     		PDF SH57K83 SH6502-based 768kHz 1943MHz 768kHz, 1943MHz/8, 4.1943MHZ

    Hitachi DSA00118

    Abstract: 3SK309 l2726 21L47 327 MARKIG
    Text: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A Z 2nd. Edition November. 1996 Features • • • Capable of low voltage operation (VDS = 1.5 to 3 V) Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) High power gain


    Original     		PDF 3SK309 ADE-208-472 Hitachi DSA00118 3SK309 l2726 21L47 327 MARKIG

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification 2.4GHz low voltage RF transceiver SA2420 DESCRIPTION PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive mixer, transmit mixer and LO buffer IC designed for high-performance low-power communication systems for


    Original     		PDF SA2420 SA2420 -10dB.

    MC-7852G

    Abstract: 9746 MC-7852 mc7852g 7805 nec mc 3734
    Text: CATV 18 dB PUSH-PULL AMPLIFIER MC-7852G FEATURES OUTLINE DIMENSIONS Units in mm • GALLIUM ARSENIDE ACTIVE DEVICES PACKAGE OUTLINE • LOW DISTORTION • LOW NOISE FIGURE (6.4 dB TYP at 860 MHz) • HIGH RELIABILITY (FIT = 125 at heat sink temperature of 100°C,


    Original     		PDF MC-7852G MC-7852 24-Hour MC-7852G 9746 mc7852g 7805 nec mc 3734

    dual-gate

    Abstract: BF1100 BF1100R marking code my
    Text: BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact


    Original     		PDF BF1100; BF1100R BF1100 dual-gate BF1100R marking code my

    BB502M

    Abstract: DSA003644
    Text: BB502M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-809C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz


    Original     		PDF BB502M ADE-208-809C 200pF, OT-143Rmod) BB502M DSA003644

    Hitachi DSA002743

    Abstract: No abstract text available
    Text: BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-606C Z 4th. Edition Aug. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    Original     		PDF BB304C ADE-208-606C 200pF, OT-343mod) BB304C Hitachi DSA002743

    Hitachi DSA002743

    Abstract: No abstract text available
    Text: BB404M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-717A Z 2nd. Edition Dec. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    Original     		PDF BB404M ADE-208-717A 200pF, OT-143 BB404M Hitachi DSA002743

    k2056

    Abstract: Hitachi DSA002743
    Text: BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608C Z 4th. Edition May 1, 1998 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)


    Original     		PDF BB305C ADE-208-608C OT-343mod) BB305C D-85622 k2056 Hitachi DSA002743

    Hitachi DSA002743

    Abstract: No abstract text available
    Text: BB405M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-718A Z 2nd. Edition Dec. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz)


    Original     		PDF BB405M ADE-208-718A 200pF, OT-143 BB405M Hitachi DSA002743

    rf transceiver 2.4 ghz

    Abstract: 2.45GHZ balun "RF Transceiver" 2.2 ghz bandpass filter chip 5Ghz lna transistor datasheet TSSOP24 SA2420 SA2420DH 2.45Ghz oscillator circuit
    Text: INTEGRATED CIRCUITS SA2420 Low voltage RF transceiver — 2.45GHz Product specification Philips Semiconductors 1997 May 23 Philips Semiconductors Product specification Low voltage RF transceiver — 2.45 GHz DESCRIPTION SA2420 PIN CONFIGURATION The SA2420 transceiver is a combined low-noise amplifier, receive


    Original     		PDF SA2420 45GHz SA2420 45GHz rf transceiver 2.4 ghz 2.45GHZ balun "RF Transceiver" 2.2 ghz bandpass filter chip 5Ghz lna transistor datasheet TSSOP24 SA2420DH 2.45Ghz oscillator circuit

    BB302M

    Abstract: DSA003642
    Text: BB302M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-572B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD;


    Original     		PDF BB302M ADE-208-572B 200pF, OT-143Rmod) BB302M DSA003642

    TM 1628 Datasheet

    Abstract: 607D 1SV70 BB305M Hitachi integrated circuit 1115 DSA003643
    Text: BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-607D Z 5th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz)


    Original     		PDF BB305M ADE-208-607D 200pF, OT-143Rmod) BB305M TM 1628 Datasheet 607D 1SV70 Hitachi integrated circuit 1115 DSA003643

    TSE 151

    Abstract: BB502C DSA003644
    Text: BB502C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-810C Z 4th. Edition Mar. 2001 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz


    Original     		PDF BB502C ADE-208-810C 200pF, OT-343mod) BB502C TSE 151 DSA003644

    1SV70

    Abstract: BB304C 4K60 K704 DSA003643
    Text: BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-606D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise characteristics;


    Original     		PDF BB304C ADE-208-606D 200pF, OT-343mod) BB304C 1SV70 4K60 K704 DSA003643

    BB102C

    Abstract: BB302C DS 1287 SOT-343mod DSA003642
    Text: BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-588 Z 1st. Edition Nov. 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD;


    Original     		PDF BB102C ADE-208-588 200pF, OT-343mod) BB302C BB102C DS 1287 SOT-343mod DSA003642

    BB501C

    Abstract: DSA003643
    Text: BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701D Z 5th. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz


    Original     		PDF BB501C ADE-208-701D 200pF, OT-343mod) BB501C DSA003643