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    FRONT METAL RECTIFIER SQUARE TYPE Search Results

    FRONT METAL RECTIFIER SQUARE TYPE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TC78B011FTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=30/Square, Sine Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001AFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    FRONT METAL RECTIFIER SQUARE TYPE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRG7CH37K10EF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.9V @ IC= 15A E n-channel Applications • Medium Power Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter Features


    Original     		PDF IRG7CH37K10EF

    IRG8CH29K10F

    Abstract: No abstract text available
    Text: IRG8CH29K10F INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 25A TJ(max) = 175°C G VCE(on) typ = 1.7V @ IC= 25A E n-channel Applications • Industrial Motor Drives  UPS  HEV Inverter  Welding G C E Gate Collector Emitter Features


    Original     		PDF IRG8CH29K10F IRG8CH29K10F

    square d Type KA

    Abstract: front metal rectifier square type
    Text: Bulletin I0131J 09/00 IR150DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 150 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 12F Series Major Ratings and Characteristics Parameters


    Original     		PDF I0131J IR150DG. square d Type KA front metal rectifier square type

    KA DIODE

    Abstract: 40HF
    Text: Bulletin I0133J 05/99 IR210DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 210 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 40HF Series Major Ratings and Characteristics Parameters


    Original     		PDF I0133J IR210DG. KA DIODE 40HF

    T70HF

    Abstract: No abstract text available
    Text: Bulletin I0136J 05/99 IR350DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 350 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: T70HF Series Major Ratings and Characteristics


    Original     		PDF I0136J IR350DG. T70HF

    70HF

    Abstract: No abstract text available
    Text: Bulletin I0135J 05/99 IR280DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 280 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 70HF Series Major Ratings and Characteristics Parameters


    Original     		PDF I0135J IR280DG. 70HF

    amp circuit diagrams 300w

    Abstract: 5196-04-RE 7805 rectifier BY 236 UL508A 2505 photocoupler "by 236" EN50082-2 S82J 100-W
    Text: Switching Power Supply S82J Compact and Economical Switching Power Supplies with Capacities Up to 600 W DIN Track Mounting Bracket Type Now Available Power range from 10 W up to 600 W. Output Voltages: 5 V, 12 V, 15 V, or 24 V. Wide AC input range 10-/25-/50-/100-W, 24-V output models: 100 to 240 VAC on one body


    Original     		PDF 10-/25-/50-/100-W, 5-/12-/15-V 300-/600-W M047-E1-6 75-344-7108/Fax: 0301-2M amp circuit diagrams 300w 5196-04-RE 7805 rectifier BY 236 UL508A 2505 photocoupler "by 236" EN50082-2 S82J 100-W

    600w switch mode power supply circuit diagram

    Abstract: L9112 10015a S82J-05024A S82J-05024DD 7805 rectifier 02524 pcb design for amplifier w/ 12 v dc supply transistor 60024 5277-04A-RE
    Text: Switch mode Power Supply S82J Compact and Economical Switch mode Power Supplies with Capacities Up to 600 W DIN Track Mounting Bracket Type Now Available • Power range from 10 W up to 600 W. • Output Voltages: 5 V, 12 V, 15 V, or 24 V. • Mounting bracket provided for mounting to control panels.


    Original     		PDF 300-/600-W EN50081-2 EN50082-2. EN50081-1 VDE0106/P100 S82Y-JFAN M047-E1-07 600w switch mode power supply circuit diagram L9112 10015a S82J-05024A S82J-05024DD 7805 rectifier 02524 pcb design for amplifier w/ 12 v dc supply transistor 60024 5277-04A-RE

    1N3595US

    Abstract: No abstract text available
    Text: DIODES SCA1N3595 RECTIFIER Ultra Low Leakage Radiation Hardness Assured Y R A DESCRIPTION This “high reliability ultra low leakage” rectifier diode is suitable for numerous applications in space and military area. Constructed in glass packages using an internal category-I metallurgical bond as tested per MIL-PRF-19500, this rectifier offers the working peak reverse voltage of 125V with 150mA maximum current rating. These devices are also


    Original     		PDF SCA1N3595 MIL-PRF-19500, 150mA 1N3595 1N3595US 1N3595US

    40HF

    Abstract: international rectifier class d
    Text: Bulletin I0133J 05/99 IR210DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 210 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 40HF Series Major Ratings and Characteristics Parameters


    Original     		PDF I0133J IR210DG. 12-Mar-07 40HF international rectifier class d

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I0134J 05/99 IR230DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 9AF Series Major Ratings and Characteristics Parameters


    Original     		PDF I0134J IR230DG. 12-Mar-07

    T110HF

    Abstract: metal rectifier diode
    Text: Bulletin I0137J 05/99 IR480DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 480 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: T110HF Series Major Ratings and Characteristics


    Original     		PDF I0137J IR480DG. T110HF 12-Mar-07 metal rectifier diode

    WAFER International Rectifier

    Abstract: IR hexfet probe specifications 93825
    Text: Preliminary Data Sheet I0146J 02/02 IR155DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 155 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 15ETS Series Major Ratings and Characteristics


    Original     		PDF I0146J IR155DM16CCB 15ETS 12-Mar-07 WAFER International Rectifier IR hexfet probe specifications 93825

    20ETF

    Abstract: No abstract text available
    Text: Bulletin I0124J 07/97 IR180LM.CS02CB SERIES FAST RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 200 to 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETF Series Major Ratings and Characteristics Parameters


    Original     		PDF I0124J IR180LM. CS02CB 20ETF 12-Mar-07

    20ETS

    Abstract: IR180DM
    Text: Bulletin I0120J rev. A 02/97 IR180DM.CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 800 and 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETS Series Major Ratings and Characteristics


    Original     		PDF I0120J IR180DM. 20ETS 12-Mar-07 IR180DM

    20ETS

    Abstract: IR180DM16CCB
    Text: Bulletin I0116J 09/00 IR180DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETS Series Major Ratings and Characteristics Parameters


    Original     		PDF I0116J IR180DM16CCB 20ETS 12-Mar-07

    high power fast recovery diodes

    Abstract: IR24DLR LS20
    Text: Bulletin I0300J IR24DLR.LS20 SERIES HIGH POWER FAST RECOVERY DIODES Junction Size: 24 mm Diameter V RRM Class: 400 to 1600 V Passivation Process: Diffused Junction Reference IR Packaged Part: SD253N/R Series Major Ratings and Characteristics Parameters Units


    Original     		PDF I0300J IR24DLR. SD253N/R 12-Mar-07 high power fast recovery diodes IR24DLR LS20

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I0529J 09/04 IR080DM12CCB STANDARD RECOVERY DIODES Junction Size: Square 80 x 80 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 4EWS.S Series Major Ratings and Characteristics Parameters VFM


    Original     		PDF I0529J IR080DM12CCB 12-Mar-07

    16FL

    Abstract: No abstract text available
    Text: Bulletin I0550J 02/07 IR180LG.HS05CB SERIES FAST RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" V RRM Class: 1000 and 1200V Passivation Process: Glassivated MESA Reference IR Packaged Part: 16FL Series Major Ratings and Characteristics Parameters


    Original     		PDF I0550J IR180LG. HS05CB 57ability, 12-Mar-07 16FL

    T90RIA

    Abstract: No abstract text available
    Text: Bulletin I0207J rev. A 01/01 IR480SG.HCB Series PHASE CONTROL THYRISTORS Junction Size: Square 480 mils Wafer Size: 4" VDRM / VRRM Class: 600 to 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: T90RIA Series Major Ratings and Characteristics


    Original     		PDF I0207J IR480SG. T90RIA 12-Mar-07

    IR370SG

    Abstract: 50RIA
    Text: Preliminary Data Sheet I0212J 12/99 IR370SG.HCB PHASE CONTROL THYRISTORS Junction Size: Square 370 mils Wafer Size: 4" V RRM Class: 600 to 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 50RIA Series Major Ratings and Characteristics


    Original     		PDF I0212J IR370SG. 50RIA 12-Mar-07 IR370SG

    IR230SG

    Abstract: No abstract text available
    Text: Bulletin I0205J 07/98 IR230SG.HCB SERIES PHASE CONTROL THYRISTORS Junction Size: Square 230 mils Wafer Size: 4" V RRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: n. a. Major Ratings and Characteristics Parameters


    Original     		PDF I0205J IR230SG. 12-Mar-07 IR230SG

    INTERNATIONAL RECTIFIER scr

    Abstract: No abstract text available
    Text: Bulletin I0203J 06/98 IR180SG.HCB SERIES PHASE CONTROL THYRISTORS Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: n. a. Major Ratings and Characteristics Parameters


    Original     		PDF I0203J IR180SG. 12-Mar-07 INTERNATIONAL RECTIFIER scr

    ka code

    Abstract: No abstract text available
    Text: Preliminary Data Sheet I0146J 02/02 IR155DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 155 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 15ETS Series Major Ratings and Characteristics


    Original     		PDF I0146J IR155DM16CCB 15ETS ka code