IR 30 D1
Abstract: No abstract text available
Text: SN74ALS236 64 x 4 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY SDAS107A-OCTOBER 1986 - REVISED SEPTEMBER 1993 Asynchronous Operation Organized as 64 Words by 4 Bits DW OR N PACKAGE TOP VIEW r NC [ 1 Data Rates From 0 to 30 MHz 3-State Outputs 16 J VCC 15 ] S O
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SN74ALS236
SDAS107A-OCTOBER
300-mll
256-bit
IR 30 D1
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transistor 2SK1603
Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all
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OT-89,
T0-220
2SK1488
2SK1865SM
2SK1531
2SK1745
2SK2057
2SK1544
O-220AB
2SK1723
transistor 2SK1603
2SK1603
2SK1118
transistor 2sk1723
MOSFET 2SK1358 Transistor Guide
2sk16
packages TYPES FOR MOSFET
toshiba transistor smd code
2sk1358
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Untitled
Abstract: No abstract text available
Text: TC55417P/J —15H. TC55417P/J-20H TC55417P/J—25H. TC55417P/J-35H • * 16,384 W O R D x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55417P/J—H is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5 - volt supply.
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TC55417P/J
--15H.
TC55417P/J-20H
TC55417P/J--25H.
TC55417P/J-35H
TC55417P/J--
120mA
100mA
TC55417P/J--H
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Untitled
Abstract: No abstract text available
Text: UCC3911 y UNITRODE PRELIMINARY Lithium-Ion Battery Protector FEATURES BLOCK DIAGRAM • Protects Sensitive Lithium-Ion Cells from Overcharging and Over-Discharging • Used for Two-Cell Lithium-Ion Battery Packs • No External FETs Required • Provides Protection Against
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UCC3911
UCC3911
UCC3911.
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12v 1200mah battery NiMH
Abstract: 12v 1200mah nimh battery db opera 415 12v 1200mah nimh 12v 1200mah battery
Text: y UCC2956 UCC3956 mmm UNITRODE Switch Mode Lithium-Ion Battery Charger Controller FEATURES Precision 4.1V Reference 1% High Efficiency Battery Charger Solution Average Current Mode Control from Trickle to Over Charge Resistor Programmable Charge Currents
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UCC2956
UCC3956
UCC3956
SEM700,
680pF
12v 1200mah battery NiMH
12v 1200mah nimh battery
db opera 415
12v 1200mah nimh
12v 1200mah battery
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Untitled
Abstract: No abstract text available
Text: SN74ALS233B 16x5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY SCAS253 - MARCH 1990 - REVISED JUNE 1992 • Independent Asychronous Inputs and Outputs DW OR N PACKAGE TOP VIEW • 16 Words by 5 Bits OE [ 1 FULL-1 [ 2 • Data Rates From 0 to 40 MHz • Fall-Through Ti me. . . 14 ns Typ
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SN74ALS233B
SCAS253
300-mil
80-bit
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74ALS234
Abstract: No abstract text available
Text: SN54ALS234, SN74ALS234 64 x 4 ASYNCHRONOUS FIRST-IN FIRST OUT MEMORY 0 2 9 5 8 , OCTOBER 1 9 8 6 Asynchronous Operation S N 54A LS 234 . . . J PACKAGE S N 74A LS 234 . . . 0 OR N PACKAGE Organized as 6 4 Words of 4 Bits Management Products TOP VIEW! Data Rates from 0 to 30 MHz
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SN54ALS234,
SN74ALS234
I67401B
256-bit
192-WORD
12-BIT
74ALS234
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MG50G2CL3
Abstract: Mg50G2cl mg50g2
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)
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MG50G2CL3
MG50G2CL3
Mg50G2cl
mg50g2
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54HC154
Abstract: No abstract text available
Text: SN54HC154, SN74HC154 LINE TO 16 LINE DECODERS/DEMULTIPLEXERS D 2 6 8 4 , DECEMBER 1 9 8 2 -R E V IS E D SEPTEMBER 1987 • Decodes 4 Binary-Coded Inputs into One of 16 Mutually Exclusive Outputs • Performs the Demultiplexing Function by Distributing Data From One Input to Any
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SN54HC154,
SN74HC154
300-mil
54HC154
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MG15G1AL3
Abstract: MG15G1AL3 equivalent mg15g1 mg15g MG15G1AL
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15G1AL3 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-In Free Wheeling Diode. . High DC Current Gain : hFE=100 Min. (Ic=15A)
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MG15G1AL3
MG15G1AL3
MG15G1AL3 equivalent
mg15g1
mg15g
MG15G1AL
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Untitled
Abstract: No abstract text available
Text: SN54HC132, SN74HC132 QUADRUPLE POSITIVE-NAND GATES WITH SCHMITT-TRIGGER INPUTS SCLS034B - DECEMBER 1982 - REVISED JANUARY 1996 • • • • • Operation From Very Slow Input Transitions Temperature-Compensated Threshold Levels High Noise Immunity Same Pinouts as ’HCOO
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SN54HC132,
SN74HC132
SCLS034B
300-mll
SN54HC132
SN74HC132
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MG400H1FK1
Abstract: LF400A
Text: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage
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MG400H1FK1
TjSl85'
MG400H1FK1
LF400A
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Field-Programmable Gate Arrays
Abstract: No abstract text available
Text: TPC14 SERIES CMOS FIELD-PROGRAMMABLE GATE ARRAYS ^ JA N U A RY 1993 • • • • • • Gate Capacities from < 1,000 to > 10,000 Gate Array Gates Gate Capacities from < 2,500 to > 25,000
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TPC14
16-Bit
TPC10
TPC12
Field-Programmable Gate Arrays
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Untitled
Abstract: No abstract text available
Text: S N 5 4 A LS 2 2 9 A , S N 7 4 A LS 2 2 9 A 1 6 x 5 ASYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES D 2 8 7 6 . M A R C H 1 9 8 6 -R E V IS E D M A Y 1 9 8 6 • Independent Asychronous Inputs and Outputs • 16 Words by 5 Bits Each • Data Rates from 0 to 30 MHz
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LS229A
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MG30G2YM1
Abstract: LD30A
Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance
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MG30G2YM1
15AIN-SOURCE
MG30G2YM1
LD30A
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MG75M2CK1
Abstract: tkp7
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain
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MG75M2CK1
MG75M2CK1
tkp7
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ta7798
Abstract: TA7798P 1S152 TA7728P
Text: TOSHIBA TA7798P TENTATIVE N T S C -P A L E N C O D E R F O R T E L E T E X T , V ID E O T E X , A N D M IC R O C O M P U T E R S TA7798P is an IC designed to compose composite video signals of either NTSC or PAL type from analog RGB input signals as well as from inputs
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TA7798P
TA7798P
ta7798
1S152
TA7728P
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG90V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG90V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete Half Bridge in One
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MG90V2YS40
2-94C1A
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Untitled
Abstract: No abstract text available
Text: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode
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MG300J1US51
2-70v
MG300J1US51
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MG150H2CL1
Abstract: No abstract text available
Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FAST—ON—TAB #110 MS w.s±a5 FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes. . High DC Current Gain : hpjr=80 Min. (Ic=150A)
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MG150H2CL1
MG150H2CL1
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Untitled
Abstract: No abstract text available
Text: AM26LS31C QUADRUPLE DIFFERENTIAL LINE DRIVER _D 2433. JA N U A R Y 19 7 9 -R E V IS E D M AY 1990 Meets EIA Standard RS-422-A D, J, OR N PAC KAG E TOP V IE W Operates From a Single 5-V Supply 1Y [ 2 16 ] V C C 15 ] 4 A 1Z[ ENABLE G [
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AM26LS31C
RS-422-A
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TA6009FN TO SH IBA BIPO LAR LINEAR INTEGRATED CIRCUIT SILICON M ONOLITHIC TA6009FN SHOCK SENSOR IC Ich VERSION TA6009FN detects an existence o f external shock through t h p <;hnrk i p n i n r a n d n i i t n u t FEATURES • TA6009FN operates from 2.7 ~5.5 V DC single power
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TA6009FN
TA6009FN
SSOP10-P-0
55TYP
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ic 109b
Abstract: MG100M2YK1 Di 762 transistor transistor B 764
Text: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling
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MG100M2YK1
-109B
ic 109b
MG100M2YK1
Di 762 transistor
transistor B 764
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d2439
Abstract: p725
Text: MC3423 OVERVOLTAGE-SENSING CIRCUIT D2439, A P R IL 1978— RE V IS E D M A R C H 1988 * D OR P PACKAGE Separate Outputs for Crowbar and Logic Circuitry TOP VIEW Programmable Time Delay to Eliminate Noise Triggering TTL-Level Activation Isolated From Voltage-Sensing Inputs
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MC3423
D2439,
d2439
p725
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