Untitled
Abstract: No abstract text available
Text: QIXYS Fast Recovery Epitaxial Diode FRED DSEI60 IFAVM vrRRM t v RSM V rrm V h 4V\iVs Type V 1200 1200 DSEI60-12A Symbol Test Conditions ^FRMS TVJ = Maximum Ratings 100 52 800 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 540 A A TVJ = 150°C; t = 10 ms (50 Hz), sine
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DSEI60
DSEI60-12A
D3D01
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Untitled
Abstract: No abstract text available
Text: DIXYS High Power Diode Modules MDD220 FRMS 2 x 450 A FAVM 2 x 270 A V RRM VRSM V RRM V V 900 1300 1500 1700 800 1200 1400 1600 Type MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 Symbol Test Conditions ^FRMS TVJ = T' VJM Tc = 100°C; 180° sine ^FAVM
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MDD220
220-08N1
220-12N1
220-14N1
220-16N1
4bflb22b
DDD35bM
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Untitled
Abstract: No abstract text available
Text: High Power Diode Modules MDD255 FRMS = 2 x 450 A ^FAVM V RRM V RSM V RRM V DSM V DRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 Symbol Test Conditions ^FRMS TVJ Tvjm Tc = 100°C; 180° sine ^FAVM ^FSM
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MDD255
255-12N1
255-14N1
255-16N1
255-18N1
D0032bfi
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Untitled
Abstract: No abstract text available
Text: □IXYS Power Schottky Rectifier DSS25 = 25 A lFAV Preliminary data V RSM V RRM V Type V 35 45 35 45 Symbol DSS 25-0035A DSS 25-0045A Test Conditions ^FRMS "^VJ ^FAV Tc = 148°C; rectangular, d = 0.5 ^FSM tp = 1 0m s Maximum Ratings per diode (50 Hz), sine
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DSS25
5-0035A
5-0045A
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Untitled
Abstract: No abstract text available
Text: D 452 N D 452 NR S5E D EUPEC Typenreihe/Tvue range_ D 452 N /D 452 NR Elektrische Eigenschaften Electrical properties Hochstzulässige Werte Vrrm Periodische Spitzensperrspannung Effektiver I frmsm Durchlaßstrom Dauergrenzstrom Ifavm Periodischer Ifrm
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0GG0T33
D448N.
T-91-20
D1509N.
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MDD 42-12-N1
Abstract: No abstract text available
Text: a s e a BRO üJN/ABB s e m i c o n Netz-Dioden-Module A3 D I GDMfl3Dfl □ □ □ D l ñ S T jp» •= 1 J - Diode Modules for mains frequency Daten pro D iode/data per diode /le s caractéristiques se rapportent à 1 diode I frms V rhm Ifavm l2t 10 ms
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K21-0120'
K21-0120
K21-0180
K21-0265
DD165,
DD220
MDD 42-12-N1
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TO-247 AD
Abstract: No abstract text available
Text: - □IXYS DSP25 VRRM Phase-leg Rectifier Diode 1200/1600 V 2x43 A 2x28 A FRMS FAVM v RSM VRRM V V DSP 25-12A DSP 25-16A DSP 25-12AS DSP 25-16AS Test Conditions ^FRMS TV.j —"^"vjM Tc = 100°C; 180° sine ^FSM J i2d t T stg 1 2 IM 43 28 A A t = 10m s
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DSP25
5-12A
5-16A
25-12AS
25-16AS
TO-247 AD
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Untitled
Abstract: No abstract text available
Text: Id IXYS • Fast Recovery Epitaxial Diode FRED DSEI60 lFAVM = 69 A VRRM = 200 V trr = 35 ns TO-247 AD c A Sym bol T e st C o n d itio n s ^FRMS "*vj = "*"vjM T c = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by T VJM 98 69 800
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DSEI60
O-247
4bflb22b
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Untitled
Abstract: No abstract text available
Text: nixYS DSEP 2x 61-06A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM - 1 T yp e V V rrm V 600 600 DSEP 2 x 6 1 -06A 1 M 1 !_ M Test Conditions I frms I favm I frm Tc = 6 5 °C ; rectangular, d = 0.5; per diode tP < 10 us; rep. rating, pulse width limited by TVJM
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1-06A
D2-31
D2-27
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DS75-08B
Abstract: No abstract text available
Text: |B B j J Rectifier Diodes Avalanche Diodes DS75 DSI75 DSA75 DSAI75 ^FRMS ^FAVM v¥ 1 .Anode vR R U . B R , r f n v’ R S M V on stud V V V 1 ^ •f- on stud - DS75-08B DS75-12B DSI75-08B DSI 75-12B 1300 1760 1950 1200 1600 1800* DSA75-12B DSA75-16B DSA75-18B
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DSI75
DSA75
DSAI75
-DO-203
DS75-08B
DS75-12B
DSI75-08B
75-12B
DSA75-12B
DSA75-16B
DS75-08B
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5001ac
Abstract: No abstract text available
Text: Power Schottky Rectifier with common cathode I fav V rrM VF 2x25 A 100 V 0.65 V Preliminary Data V RSM V FIRM V V 100 100 TO-247 AD Type A C A DSSK 50-01A C TAB A = Anode, C = Cathode , TAB = Cathode Symbol Test Conditions ^FRMS ^FAV ^FAV Tc = 155°C; rectangular, d = 0.5
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O-247
0-01A
5001ac
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Untitled
Abstract: No abstract text available
Text: SKN 240/SKR 240 1 frms — 500 A; lF A V- 320 A SKN 240/04 SKR 240/04* SKN 240/08 SKR 240/08* SKN 240/12 SKR 240/12* SKN 240/14 SKR 240/14* SKN 240/16 SKR 240/16* V rsm 400 V 800 V 1200 V 1400 V 1600 V V r rm 400 V 800 V 1200 V 1400 V 1600 V I fav Tease = 100 °C, sin. 180 °el
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diode avalanche DSA VRRM 2300
Abstract: diode avalanche DSA DSA 135 dsa 1508-11 DSA VRRM 2300 40561 dsa 1508 abb diode YSD 40629 YSD 45-01
Text: A B B SEMICONDUCTORS AG DSA Avalanche Diodes Type Ordering number Bestellnummer Num. de commande 33E D □ QOlbfi Bfl 000002=1 0 B A B B DSA Avalanche-Dioden I f.ÎM V rrm I frms V Tc=50°C Tc=100<>C 8,3 ms 10 ms kA V A A kA I favm DSA l 403-38.50 GG.L1G 3800.5000 1040
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HEKSV-403GG-831
HEKSV-503GE-831
HEKSV-603GC-831
Q0Q0031
diode avalanche DSA VRRM 2300
diode avalanche DSA
DSA 135
dsa 1508-11
DSA VRRM 2300
40561
dsa 1508
abb diode YSD
40629
YSD 45-01
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FRMS
Abstract: No abstract text available
Text: SKS 1 *FRMS — 7 A ¡ *FA V — SKS 1/02 SKS 1/06 SKS 1/10 SKS 1/12 V rsm 400 V 800 V 1250 V 1500 V V rrm 400 V 800 V 1250 V 1500 V Ifav Tamb = 4 5 °C ,s in .1 8 0 °e l 1,4 A 7A I frm s Ifcl (Tomb = 45 °C ) 1,2 A Ifsm (T v i = 25 ° C ) 115 A (Tvi = 160 °C)
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Untitled
Abstract: No abstract text available
Text: □IXYS MD0 500 High Power Diode Module V RRM FRMS FAVM =1200-2200 V = 880 A = 560 A Preliminary Data V RRM V RSM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Symbol Test Conditions ^FRMS ^FAVM "^"vj ^FSM TVJ= 45°C VR= 0 l2t Type 3 o MDO
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500-12N1
500-14N1
500-16N1
500-18N1
500-20N1
500-22N1
GGG350Ã
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Untitled
Abstract: No abstract text available
Text: □IXYS Fast Recovery Epitaxial Diode FRED DSEI 12 IFAVM vrRRM V 1200 Vrrm 1200 DSEI 12-12A Test C onditions ^FRMS ^FRM "^"vj — "l"vjM Tc = 100°C; rectangular, d = 0.5 tp < 10 ns; rep. rating, pulse width limited byTVJM ^FSM TVJ = 45°C; Maximum Ratings
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O-220
2-12A
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Untitled
Abstract: No abstract text available
Text: □IX YS Fast Recovery Epitaxial Diode FRED V RSM V V’ FIRM DSEI 2x61 V 200 200 1 W.— H' *I n ° 1 - W — *-» Test Conditions ^FRMS ' favm *FRU TVJ —"lyjM Tc = 85°C; rectangular, d = 0.5 tp < 10 jis; rep. rating, pulse width limited by T VJM
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0DQ473Q
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Untitled
Abstract: No abstract text available
Text: □IXYS_ Power Schottky Rectifier DSS 16 U V V RRM V rr m Type V 100 100 DSS 16-01A S Symbol Test Conditions ^FRMS "^"vj ^FAV Tc = 150°C; rectangular, d = 0.5 ^FSM tp = 1 0 m s Maximum Ratings (per diode) (50 Hz), sine Eas Current decaying linearly to zero in 1 |is
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6-01A
O-220
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Untitled
Abstract: No abstract text available
Text: SIEMENS BYP 101 FRED Diode ,v " X i. V Fast recovery epitaxial diode Soft recovery characteristics Type Arrivi ^FRMS frr Package Ordering Code BYP 101 1000V 25A 80ns TO -218 AD C67047-A2072-A2 Maximum Ratings Param eter Symbol Mean forward current /f a v 7q = 90 ° C ,D = 0 .5
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C67047-A2072-A2
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B6U 205 N L
Abstract: N-16 B6U 145 n
Text: IsoPACK Bridge Rectifier & AC-Switches IsoPACK Brückengleichrichter & Drehstromsteller Type l«/Tc Vdrm, Vrrm I frmsm rT Ifsm V TO RthJC "Tvj max outline ma V V A/°C °c/w Otrmsm ) Otsm ) °c A V dsm = V drm A V rsm = 10 ms, Irms/T c Vrrm+100V T vj max
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B6U145N
B6U215N
B6HK135N
B6HK165N
205idge
B6U 205 N L
N-16
B6U 145 n
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dr 25 diode
Abstract: Diode DR 25
Text: SIEMENS FRED Diode BYP 301 • Soft recovery characteristics Type ^RRM ^FRMS BYP 301 1200 V 20 A 80 ns Package '> Ordering Code TO-218 AD C67047-A2251-A2 Maximum Ratings Parameter Symbol Mean forward current Tc = 90 "C, D = 0.5 ^FAV 12 RMS forward current
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O-218
C67047-A2251-A2
50-Hz
dr 25 diode
Diode DR 25
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Untitled
Abstract: No abstract text available
Text: Phase-leg Rectifier Diode 800/1200 V 2 x 17 A 2 x 11 A RRM F RMS F(AV)M ‘ V fiSM V 900 1300 V RRM V TO-220AB DSP 8-08A DSP 8-12A DSP 8-08AS DSP 8-12AS Test Conditions ^FRMS ^F(AVJM TVJ T asg = 100°C; 180° sine ^FSM T VJ = 45'C ; t = 10 ms t = 8.3 ms T tfJ = 150°C;
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O-263
O-220AB
T0-220
8-08AS
8-12AS
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D423
Abstract: No abstract text available
Text: DSS 15-0045B Power Schottky Rectifier U av V rrm VF 16 A 45 V 0.42 V Preliminary Data v RSM Type V rrm V V 45 45 A~' DSS 16-0045B I C TAB A = Anode, C = Cathode , TAB = Cathode Symbol ^FRMS Maximum Ratings Test Conditions ^FAV Tc = 130°C; rectangular, d = 0.5
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15-0045B
16-0045B
D4-23
D423
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Untitled
Abstract: No abstract text available
Text: O S S * 48-006B Advanced Technical Data Power Schottky Rectifier •FAV with common cathode V rrm VF 2x20 A 60 V 0.50 V TO-247 AD vt r sm V rrm V V 60 60 Type A DSSK 40-006B C A C TAB Symbol ^FRMS Test Conditions 70 20 40 A A A 350 A lAS = tbd A; L = 180 pH; TVJ = 25°C; non repetitive
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48-006B
O-247
40-006B
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