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Text: BD136 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)8.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: SK3267 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)75 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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Text: DTS2001 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)720m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k
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Text: MPS750 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)2.0
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Text: BD140-16 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)135õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: PZT651T1 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)2.0
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Text: MPS751 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)2.0
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Text: BD140-6 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: BD136-6 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: DTS2003 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)600m Absolute Max. Power Diss. (W)720m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k
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Text: BD136-16 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2SC268B Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)150º V(BR)CBO (V)150 I(C) Max. (A)30m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: BD140 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)8.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m
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Text: BD136-10 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)13 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: DTS2000 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)600m Absolute Max. Power Diss. (W)720m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k
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Text: DTS2002 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)600m Absolute Max. Power Diss. (W)720m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.2.0k
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