Untitled
Abstract: No abstract text available
Text: BC556 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)65 V(BR)CBO (V)80 I(C) Max. (A)100m Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.120 h(FE) Max. Current gain.500
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BC556
Freq280MÃ
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Untitled
Abstract: No abstract text available
Text: BC556B Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)100m Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.180 h(FE) Max. Current gain.460
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BC556B
Freq280MÃ
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Untitled
Abstract: No abstract text available
Text: BC556A Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)65 V(BR)CBO (V)80 I(C) Max. (A)100m Absolute Max. Power Diss. (W)625m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.120 h(FE) Max. Current gain.220
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BC556A
Freq280MÃ
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2SC1833
Abstract: No abstract text available
Text: 2SC1833 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.160 h(FE) Max. Current gain.
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2SC1833
Freq280M
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Untitled
Abstract: No abstract text available
Text: BSW13 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)160m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.
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BSW13
Freq280M
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