osc 50mhz smd 5x7
Abstract: Sunny TCXO Motorola lv93 plastic raw material CRYSTAL SMD 25MHZ SUNNY NPC 5037 Sunny 50MHz sm5545tev Alcatel-Lucent SM7745DV
Text: Pletronics, Inc. Design/Idea Workshop Agenda & Content Guideline Integrated Supply Chain Motorola Confidential and Proprietary 1 Agenda 1. Overview 2. Key Financial Measures 3. Technology Roadmap 4. Manufacturing Flow Diagram 5. Cost Breakdown Integrated Supply Chain
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mems oscillator silicon clocks
Abstract: z cut quartz piezoelectric properties Panasonic saw osc 50mhz smd 5x7 Quartz wrist watch ic opnext l PLE SM77 106.25 m crystal high precision TCXO Crystal Oscillators piezoelectric film sensor PLE SM77 crystal
Text: Pletronics, inc. Manufacturer of High Quality Crystals and Oscillators Company Introduction Crystals and Oscillators Quartz crystals have been in regular use since the 1920’s to give an accurate frequency for all radio transmitters, radio receivers and computers. They
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Text: TRSP20X Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1843-3020 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300ö V(BR)CBO (V)300 I(C) Max. (A)30 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1843-3705 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)375ö V(BR)CBO (V)350 I(C) Max. (A)30 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: TRSP4006 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)400ã V(BR)CBO (V)400 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: SDT69604 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1771-0860 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80ö V(BR)CBO (V)90 I(C) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: XGSR3040 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)75 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2SC3868 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)500 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)800m
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Text: 1843-2220 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)225ö V(BR)CBO (V)225 I(C) Max. (A)30 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: SDT12201 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200ö V(BR)CBO (V)200 I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1771-1240 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)130 I(C) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2SC1391 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300º V(BR)CBO (V)300 I(C) Max. (A)100m Absolute Max. Power Diss. (W)6.5 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N6036 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)1.5’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.750
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Text: GSDR10020 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)250 I(C) Max. (A)15 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1776-0650 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60ö V(BR)CBO (V)70 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: MJD6039 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k
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Text: 1776-0450 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40ö V(BR)CBO (V)50 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1776-1450 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140ö V(BR)CBO (V)150 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1843-2210 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)225ö V(BR)CBO (V)225 I(C) Max. (A)30 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1843-3510 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350ö V(BR)CBO (V)350 I(C) Max. (A)30 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1843-2710 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)275ö V(BR)CBO (V)275 I(C) Max. (A)30 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: PTC108 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)45 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC) I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.
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