Untitled
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Text: 2N3942 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP NPN V(BR)CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)50m P(D) Max. (W)1.5 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)250p @V(CBO) (V) (Test Condition)45
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2N3942
Freq200M
StyleTO-78
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Untitled
Abstract: No abstract text available
Text: BR200B Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)20 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain.
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BR200B
Freq200M
StyleTO-210AC
Code3-12
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Untitled
Abstract: No abstract text available
Text: 2N6988 Transistors PNP Multichip Composite Transistor Pair Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)60 V(BR)CBO (V) I(C) Max. (A)600m P(D) Max. (W)1.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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2N6988
Freq200M
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Untitled
Abstract: No abstract text available
Text: 2N4405+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m
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2N4405
Freq200M
time25n
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Untitled
Abstract: No abstract text available
Text: 2SA1125 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m
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2SA1125
Freq200MÃ
q200MÃ
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Untitled
Abstract: No abstract text available
Text: FF2907J Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)2.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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FF2907J
Freq200M
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Untitled
Abstract: No abstract text available
Text: 2N3486 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N3486
Freq200M
time40n
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Untitled
Abstract: No abstract text available
Text: B3458 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)7.5 Maximum Operating Temp (øC) I(CBO) Max. (A).02mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.
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B3458
Freq200M
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Untitled
Abstract: No abstract text available
Text: 2906 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)0.8 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.
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Freq200M
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Untitled
Abstract: No abstract text available
Text: 2SA1125T Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m
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2SA1125T
Freq200MÃ
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Untitled
Abstract: No abstract text available
Text: PC107 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.600 h(FE) Max. Current gain.
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PC107
Freq200M
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Untitled
Abstract: No abstract text available
Text: 2SA1125S Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m
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2SA1125S
Freq200MÃ
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Untitled
Abstract: No abstract text available
Text: B3466 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)75õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.
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B3466
Freq200M
StyleStF-10
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Untitled
Abstract: No abstract text available
Text: 2SC2395 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)40 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.
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2SC2395
Freq200M
StyleSOT-123var
Code4-28
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Untitled
Abstract: No abstract text available
Text: NA22ZX Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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NA22ZX
Freq200M
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Untitled
Abstract: No abstract text available
Text: MMST2907 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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MMST2907
Freq200M
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Untitled
Abstract: No abstract text available
Text: ECG46 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10k h(FE) Max. Current gain.
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ECG46
Freq200M
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Untitled
Abstract: No abstract text available
Text: MMST2907A Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60.0 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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MMST2907A
Freq200M
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mps3693
Abstract: No abstract text available
Text: MPS3693 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.
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MPS3693
Freq200M
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Untitled
Abstract: No abstract text available
Text: TMPT2107G4 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.170 h(FE) Max. Current gain.
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TMPT2107G4
Freq200M
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Untitled
Abstract: No abstract text available
Text: ZTX3905 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50n÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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ZTX3905
Freq200M
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Untitled
Abstract: No abstract text available
Text: MD2219 Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)30 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W)625m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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MD2219
Freq200M
StyleTO-99
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Untitled
Abstract: No abstract text available
Text: PET0404-2 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30â V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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PET0404-2
Freq200M
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Untitled
Abstract: No abstract text available
Text: DTD143TF Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.100 h(FE) Max. Current gain.600
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DTD143TF
Freq200M
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