Untitled
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Text: D24A3394 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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D24A3394
Freq140M
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Text: 2SD1463 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.60 h(FE) Max. Current gain.200
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2SD1463
Freq140M
StyleSOT-23
Code4-33
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Untitled
Abstract: No abstract text available
Text: 2SA1579 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SA1579
Freq140M
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Untitled
Abstract: No abstract text available
Text: D24A3393 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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D24A3393
Freq140M
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Untitled
Abstract: No abstract text available
Text: ZTX653M1 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100è V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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ZTX653M1
Freq140M
StyleSO-96
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Abstract: No abstract text available
Text: 2N3856 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)18 I(C) Max. (A)100m Absolute Max. Power Diss. (W)620m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N3856
Freq140M
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Text: 2SD1463GB Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.200
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2SD1463GB
Freq140M
StyleSOT-23
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Abstract: No abstract text available
Text: 2N3435 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)250m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.200
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2N3435
Freq140M
Code3-12
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Abstract: No abstract text available
Text: PT3473 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)140 I(C) Max. (A)1 Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: ZTX651M1 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60è V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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ZTX651M1
Freq140M
StyleSO-96
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2SC1363
Abstract: No abstract text available
Text: 2SC1363 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)200n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC1363
Freq140M
req140M
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Text: 2PB1219AS Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)300m
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Freq140M
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Text: 2SD669D Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)180 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.160 h(FE) Max. Current gain.320
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2SD669D
Freq140M
StyleTO-126
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Text: 2SC451 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)100 I(C) Max. (A)1.2 Absolute Max. Power Diss. (W)28 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain.30Â
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2SC451
Freq140M
Code3-12
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Abstract: No abstract text available
Text: 2SB1348 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq140M
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Text: 2SA1547 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq140M
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Abstract: No abstract text available
Text: FZT651 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)3 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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FZT651
Freq140M
StyleSOT-223
Code4-179
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Untitled
Abstract: No abstract text available
Text: 2SB841C Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)180 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SB841C
Freq140M
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Text: FZT653 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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FZT653
Freq140M
StyleSOT-223
Code4-179
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Untitled
Abstract: No abstract text available
Text: FCX753 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).3 @I(C) (A) (Test Condition)1.0
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FCX753
Freq140MÃ
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Text: ZTX652 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80è V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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ZTX652
Freq140M
StyleTO-92
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Untitled
Abstract: No abstract text available
Text: ZTX650 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45è V(BR)CBO (V)60 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC) I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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ZTX650
Freq140M
StyleTO-92
Code3-12
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Untitled
Abstract: No abstract text available
Text: ZTX651 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60è V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300
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ZTX651
Freq140M
StyleTO-92
Code3-12
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Untitled
Abstract: No abstract text available
Text: 2SC1285 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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