Untitled
Abstract: No abstract text available
Text: MS1583A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.5m Peak Curr. Tol. Total Cap. (F)1.3p Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq12G Series Induct. (H).10n R(series) (Ohms)6.0 Neg Resist.85 Semiconductor MaterialGaSb
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MS1583A
Freq12G
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Untitled
Abstract: No abstract text available
Text: S1210-3 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.0m Peak Curr. Tol.100u Total Cap. (F)1.0p Ip/Iv Min12 Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq12G Series Induct. (H)100p R(series) (Ohms)4.0 Neg Resist.65 Semiconductor MaterialGaSb
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S1210-3
Min12
Freq12G
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Untitled
Abstract: No abstract text available
Text: MS1571 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol.200u Total Cap. (F)1.5p Ip/Iv Min12 Vp60m Vv350m Fwd Volt @Ipeak500m Resist. Cutoff Freq12G Series Induct. (H)100p R(series) (Ohms)5.0 Neg Resist.30 Semiconductor MaterialGaSb
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MS1571
Min12
Vp60m
Vv350m
Ipeak500m
Freq12G
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Untitled
Abstract: No abstract text available
Text: 1N358R Diodes General Purpose UHF/MW Detector Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandL-X Test Freq12G Frequency Min. (Hz)1G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. Minimum Figure of Merit15 @Power Level (test) (W)
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1N358R
Freq12G
Merit15
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Untitled
Abstract: No abstract text available
Text: CAY17 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq12G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5 Maximum Conversion Loss (dB)6.0
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CAY17
Freq12G
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Untitled
Abstract: No abstract text available
Text: MS5531 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq12G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.0 Maximum Conversion Loss (dB)
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MS5531
Freq12G
Min200
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Untitled
Abstract: No abstract text available
Text: MS1571A Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 2.0m Peak Curr. Tol. Total Cap. (F)1.5p Ip/Iv Min Vp Vv Fwd Volt @Ipeak Resist. Cutoff Freq12G Series Induct. (H).10n R(series) (Ohms)5.0 Neg Resist.60 Semiconductor MaterialGaSb
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MS1571A
Freq12G
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Untitled
Abstract: No abstract text available
Text: CAY16 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq12G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5 Maximum Conversion Loss (dB)6.5
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CAY16
Freq12G
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Untitled
Abstract: No abstract text available
Text: 2SC1567 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.65 h(FE) Max. Current gain.330
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2SC1567
Freq120MÃ
StyleTO-126
Code3-140
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Untitled
Abstract: No abstract text available
Text: 2SA706-2 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)7.9 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SA706-2
Freq120M
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Untitled
Abstract: No abstract text available
Text: IDC3299 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240
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IDC3299
Freq120M
StyleTO-220var
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Untitled
Abstract: No abstract text available
Text: RCA1A01 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.200
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RCA1A01
Freq120M
StyleTO-39
Code3-12
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Untitled
Abstract: No abstract text available
Text: 2SC3694 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.400
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2SC3694
Freq120M
StyleSOT-186
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Untitled
Abstract: No abstract text available
Text: ZTX951 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)4 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).30 @I(C) (A) (Test Condition)4 @I(B) (A) (Test Condition)400m
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ZTX951
Freq120M
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LNK 304 PN
Abstract: STRL 352 lnk 306 pn Z8F642 Z8F64 I1932 433 mhz rr10 Procesor pentium II register organization TEMPERATURE CONTROL project USING MICROCONTROLLER Time-Saver Standards
Text: Z8ENZDS0200ZCC ZiLOG Developer Studio II— Z8 Encore! User Manual UM013021-0604 www.zilog.com This publication is subject to replacement by a later edition. To determine whether a later edition exists, or to request copies of publications, contact: ZiLOG Worldwide Headquarters
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Z8ENZDS0200ZCC
UM013021-0604
LNK 304 PN
STRL 352
lnk 306 pn
Z8F642
Z8F64
I1932
433 mhz rr10
Procesor pentium II register organization
TEMPERATURE CONTROL project USING MICROCONTROLLER
Time-Saver Standards
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lnk 306 pn
Abstract: UM0130 a337b Z8F64 IEEE695 Z8F6403 Error 403 lnk 304 pn LNK 309 PN
Text: Z8ENZDS0200ZCC ZiLOG Developer Studio II— Z8 Encore!TM User Manual UM013009-0303 www.zilog.com This publication is subject to replacement by a later edition. To determine whether a later edition exists, or to request copies of publications, contact: ZiLOG Worldwide Headquarters
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Z8ENZDS0200ZCC
UM013009-0303
lnk 306 pn
UM0130
a337b
Z8F64
IEEE695
Z8F6403
Error 403
lnk 304 pn
LNK 309 PN
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Untitled
Abstract: No abstract text available
Text: BCW60D Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)32 V(CE)sat Max. (V).55 @I(C) (A) (Test Condition)50m
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BCW60D
Freq125M
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Untitled
Abstract: No abstract text available
Text: BCX51-6 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45è V(BR)CBO (V)45 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BCX51-6
Freq125M
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Untitled
Abstract: No abstract text available
Text: GES3417 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)500m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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GES3417
Freq120M
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Untitled
Abstract: No abstract text available
Text: BCW60DL Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BCW60DL
Freq125M
q125M
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Untitled
Abstract: No abstract text available
Text: SDT13301 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)10 Absolute Max. Power Diss. (W)220 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT13301
Freq12M
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Untitled
Abstract: No abstract text available
Text: SDN1020 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k
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SDN1020
Freq12M
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Untitled
Abstract: No abstract text available
Text: BCW60C Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)32 V(CE)sat Max. (V).55 @I(C) (A) (Test Condition)50m
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BCW60C
Freq125M
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BR1545
Abstract: EXCELDR35V MCH212F104Z MCH212F MCH212F104ZP MCH312F105Z
Text: F A I R C H I L D s e m ic o n d u c t o r w w w .fa ir c h ild s e m i.c o m tm RC5037 Adjustable Switching Regulator Description • High power switched-mode DC-DC controller can control in excess of 10A • Output voltage adjustable • 85% efficiency • Cumulative accuracy < 3% over line, load, and
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OCR Scan
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RC5037
RC5037
DS30005037
BR1545
EXCELDR35V
MCH212F104Z
MCH212F
MCH212F104ZP
MCH312F105Z
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