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    FREE DOWNLOAD TRANSISTOR AND IC EQUIVALENT DATA Search Results

    FREE DOWNLOAD TRANSISTOR AND IC EQUIVALENT DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    FREE DOWNLOAD TRANSISTOR AND IC EQUIVALENT DATA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NSV40300

    Abstract: P40300 free transistor and ic equivalent data NSS40300MD
    Text: NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low


    Original     		PDF NSS40300MDR2G, NSV40300MDR2G NSS40300MD/D NSV40300 P40300 free transistor and ic equivalent data NSS40300MD

    221D

    Abstract: AN1040 MJF47 MJF47G TIP47
    Text: MJF47 High Voltage Power Transistor Isolated Package Applications Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required to be electrically isolated from the


    Original     		PDF MJF47 TIP47 E69369, MJF47/D 221D AN1040 MJF47 MJF47G TIP47

    to225aa

    Abstract: BD678 bd676 BD682 equivalent to225aa case
    Text: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications.


    Original     		PDF BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 BD675, to225aa BD678 bd676 BD682 equivalent to225aa case

    BD249C equivalent

    Abstract: 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram
    Text: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125


    Original     		PDF BD249C BD249C/D BD249C equivalent 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram

    NJVMJD47T4G

    Abstract: No abstract text available
    Text: MJD47, NJVMJD47T4G, MJD50 High Voltage Power Transistors DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode supply drivers and other switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves


    Original     		PDF MJD47, NJVMJD47T4G, MJD50 TIP47, TIP50 AEC-Q101 NJVMJD47T MJD47/D NJVMJD47T4G

    free transistor and ic equivalent data

    Abstract: No abstract text available
    Text: NSS30201MR6T1G, SNSS30201MR6T1G 30 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS30201MR6T1G, SNSS30201MR6T1G NSS30201MR6/D free transistor and ic equivalent data

    Untitled

    Abstract: No abstract text available
    Text: NSS35200MR6T1G 35 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS35200MR6T1G NSS35200MR6/D

    Untitled

    Abstract: No abstract text available
    Text: NSS35200MR6T1G, SNSS35200MR6T1G 35 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS35200MR6T1G, SNSS35200MR6T1G NSS35200MR6/D

    NSS352

    Abstract: No abstract text available
    Text: NSS35200MR6T1G, SNSS35200MR6T1G 35 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS35200MR6T1G, SNSS35200MR6T1G NSS35200MR6/D NSS352

    Untitled

    Abstract: No abstract text available
    Text: NSS60601MZ4, NSV60601MZ4T1G, NSV60601MZ4T3G 60 V, 6.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS60601MZ4, NSV60601MZ4T1G, NSV60601MZ4T3G NSS60601MZ4/D

    NSV60600MZ4

    Abstract: NSV60600
    Text: NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G 60 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G NSS60600MZ4/D NSV60600MZ4 NSV60600

    Untitled

    Abstract: No abstract text available
    Text: NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G 60 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G NSS60600MZ4/D

    NSV60601MZ4T1G

    Abstract: NSV60601MZ4 NSV60601
    Text: NSS60601MZ4, NSV60601MZ4T1G, NSV60601MZ4T3G 60 V, 6.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS60601MZ4, NSV60601MZ4T1G, NSV60601MZ4T3G NSS60601MZ4/D NSV60601MZ4T1G NSV60601MZ4 NSV60601

    Untitled

    Abstract: No abstract text available
    Text: NSS40600CF8T1G, SNSS40600CF8T1G 40 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS40600CF8T1G, SNSS40600CF8T1G NSS40600CF8/D

    BD675G

    Abstract: BD679G BD679AG
    Text: BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G Plastic Medium-Power Silicon NPN Darlingtons This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications.


    Original     		PDF BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G BD676, BD677, BD675G BD679G BD679AG

    Untitled

    Abstract: No abstract text available
    Text: NST45010MW6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need


    Original     		PDF NST45010MW6T1G NST45011MW6T1G Q101n NST45010MW6/D

    Untitled

    Abstract: No abstract text available
    Text: MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original     		PDF MBT3906DW1T1G, SMBT3906DW1T1G MBT3906DW1T1G 23/SOTâ MBT3906DW1T1/D

    SMBT3906DW1T1G

    Abstract: MBT3906DW1T1G
    Text: MBT3906DW1T1G, SMBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original     		PDF MBT3906DW1T1G, SMBT3906DW1T1G MBT3906DW1T1G OT-23/SOT-323 OT-363 AEC-Q101 MBT3906DW1T1/D

    NSS20201MR6T1G

    Abstract: No abstract text available
    Text: NSS20201MR6T1G 20 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS20201MR6T1G NSS20201MR6/D NSS20201MR6T1G

    Untitled

    Abstract: No abstract text available
    Text: NSS20201MR6T1G 20 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		PDF NSS20201MR6T1G NSS20201MR6/D

    NSS20201MR6T1G

    Abstract: No abstract text available
    Text: NSS20201MR6T1G Product Preview 20 V, 3 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS20201MR6T1G NSS20201MR6/D NSS20201MR6T1G

    NSS20300MR6T1G

    Abstract: No abstract text available
    Text: NSS20300MR6T1G Product Preview 20 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS20300MR6T1G NSS20300MR6/D NSS20300MR6T1G

    SPZT3904T1G

    Abstract: transistor marking 1am
    Text: PZT3904T1G, SPZT3904T1G General Purpose Transistor NPN Silicon http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT−223 CASE 318E


    Original     		PDF PZT3904T1G, SPZT3904T1G AEC-Q101 OT-223 PZT3904T1/D transistor marking 1am

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904TT1G, SMMBT3904TT1G General Purpose Transistors NPN Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT−416/SC−75 package which is designed for low power surface mount applications. Features • AEC−Q101 Qualified and PPAP Capable


    Original     		PDF MMBT3904TT1G, SMMBT3904TT1G 416/SCâ MMBT3904TT1/D