Untitled
Abstract: No abstract text available
Text: BCPA42M NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES The BCPA42M is designed for application requires for high voltage. PACKAGE DIMENSIONS SOT-89 E B M A C
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BCPA42M
BCPA42M
OT-89
30MHz
01-June-2004
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30MHZ
Abstract: GMA42M
Text: ISSUED DATE :2004/12/03 REVISED DATE : G M A4 2 M N P N P L A S T I - E N C A P S U L AT E T R A N S I S T O R Description The GMA42M is designed for application requires for high voltage. Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4
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GMA42M
OT-89
GMA42M
30MHZ
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Untitled
Abstract: No abstract text available
Text: MXTA42 NPN Plastic-Encapsulate Transistor SOT-89 * “G” Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
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MXTA42
OT-89
MXTA42
20MHz
OT-89
500TYP
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fr5 sot89
Abstract: sot89 fr5 MXTA42 a42 sot-89 we 510
Text: MXTA42 NPN Plastic-Encapsulate Transistor SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 M aximum R atings TA=25 C unless otherwise noted Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO
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MXTA42
OT-89
MXTA42
20MHz
OT-89
500TYP
fr5 sot89
sot89 fr5
a42 sot-89
we 510
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3055L
Abstract: f 3055l sot89 Marking mosfet fr5 sot89 FHK3055L sot89 17
Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK3055L N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-89 High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻 Rugged and reliable. 高可靠性
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FHK3055L
OT-89
3055L
f 3055l
sot89 Marking mosfet
fr5 sot89
FHK3055L
sot89 17
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Untitled
Abstract: No abstract text available
Text: Supertex inc. DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
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DN3525
DN3525
DSFP-DN3525
C062813
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Untitled
Abstract: No abstract text available
Text: Supertex inc. TN2510 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 2.0V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance
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TN2510
125pF
DSFP-TN2510
A062113
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Untitled
Abstract: No abstract text available
Text: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN2540 General Description Low threshold 2.0V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance
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TN2540
125pF
DSFP-TN2540
A062113
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN2450 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability
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VN2450
DSFP-VN2450
B082013
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN2460 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability
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VN2460
DSFP-VN2460
B082013
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Abstract: No abstract text available
Text: TP2424 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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TP2424
TP2424
O-243AA
OT-89)
O-243,
DSFP-TP2424
A122707
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DN25D
Abstract: DN2540N2 dgx 220
Text: ^ Supertex inc. D N 25D Low Threshold Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information B VDSX/ ^ D S O N lo s s b v dgx (max) (min) 350V 25n 400V 25Q Order Number / Package TO-39 TO-92 TO-220 150mA DN2535N2 DN2535N3 DN2535N5
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DN2535N2
DN2540N2
DN2535N3
DN2540N3
O-220
DN2535N5
DN2540N5
O-243AA*
150mA
150mA
DN25D
dgx 220
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mt5300
Abstract: No abstract text available
Text: ^ S u p e rte x me. DN2535 DN2540 Low Thresh old Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information O rder Num ber / Package b v dsx/ ^D S O N b v dgx (m ax) '□ss (m in) TO-39 TO-92 TO -220 TO -243AA* DIE 350V 250 150mA DN2535N2
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DN2535
DN2540
150mA
150mA
DN2535N2
DN2540N2
DN2535N3
DN2540N3
DN2535N5
DN2540N5
mt5300
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Untitled
Abstract: No abstract text available
Text: T N 25C Ljì Supertex me. L o w T h r e s h o ld N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV0SS / * Order Number / Package ^DS ON V gS(«i ) blONI (max) (max) (min) TO-243AA* DICE 200V 6£i 2.0V 1.0A — TN2520ND 240V 60 2.0 V 1.0A
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O-243AA*
TN2524N8
TN2520ND
TN2524ND
250mA
300ms
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N-Channel Depletion-Mode MOSFET high voltage
Abstract: No abstract text available
Text: LND150 inc. N-Channel Depletion-Mode MOSFET Ordering Informâtion Order Number / Package b v dsx/ ^DS ON •d s s BVdcx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£i 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SOT-89 Features Advanced DMOS Technology □ ESD gate protection
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LND150
LND150N3
O-243AA*
LND150N8
LND150ND
OT-89
N-Channel Depletion-Mode MOSFET high voltage
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Untitled
Abstract: No abstract text available
Text: ^ Super te x inc. T P 25 L Lo w T h r e s h o ld P-Channel Enhancement-Mode Vertical DMOS FETs Preliminary Ordering Information * t Order Num ber / Package VDSS R d s io n i ^ G S th ' d (ON) B V oes (max) (max) (min) TO-243AA* DICEt -20V 2.on -2.4V -2.0A
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O-243AA*
TP2502N8
TP2502ND
OT-89,
-250mA
300ms
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MOSFET 818 ln
Abstract: No abstract text available
Text: LN D 1 E incN-Channel Depletion-Mode MOSFET Ordering Information B Vdsx / Order Number / Package f*DS OH '□(ON) b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£2 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89 Features Advanced DMOS Technology 7! ESD gate protection
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LND150N3
O-243AA*
LND150N8
LND150ND
OT-89
MOSFET 818 ln
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Untitled
Abstract: No abstract text available
Text: TP25L 0 Supertex me. Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss / R DS ON) V GS(th) W BVdgs (max) (max) (min) TO-243AA* DICEt -20V 2.0£2 -2.4V -2.0A TP2502N8 TP2502ND n) * Same as SOT-89,
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TP25L
O-243AA*
TP2502N8
TP2502ND
OT-89,
-250mA
300ns
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Untitled
Abstract: No abstract text available
Text: ^ TN25L Supertex inc. Low T hre sho ld P re lim in a ry N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information T Order Number / Package b v dss / ^DS ON V g S(Ui) ^D(ON) b v dgs (max) (max) (min) TO-243AA* DICEt 20V i.on 1.6V 4.0A — TN2502ND
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TN25L
O-243AA*
TN2504N8
TN2502ND
TN2504ND
OT-89.
500mA.
300ms
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Abstract: No abstract text available
Text: LJ S u p e rte x TP25A m e . L o w T h r e s h o ld P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ' r Order Number / Package B V Ds s ! ^DS O N) V GS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* DICEt -60V 3.5£i -2.4V -1.5A — TP2506ND
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TP25A
O-243AA*
TP2510N8
TP2506ND
TP2510ND
-100V
OT-89.
-250mA
300ms
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Untitled
Abstract: No abstract text available
Text: TN2504 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON VGS(th) ' d (ON) BVoos (max) (max) (min) TO-243AA* Diet 40V i.o n 1.6V 4.0A TN2504N8 TN2504ND 'S a m e as SOT-89. Product supplied on 2000 piece ca rrier tape reels.
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TN2504
O-243AA*
TN2504N8
TN2504ND
OT-89.
125pF
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VP1310N2
Abstract: No abstract text available
Text: VP1304 VP1306 VP1310 ß i Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss / ^ D S O N h (O N ) B V uqs (max) (min) TO-243AA* TO-39 TO-92 -40V 250 -0.25A — VP1304N2 VP1304N3 -60V 25LÌ
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VP1304
VP1306
VP1310
O-243AA*
VP1310N8
VP1304N2
VP1306N2
VP1310N2
VP1304N3
VP1306N3
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Untitled
Abstract: No abstract text available
Text: ^ Supertax inc. DN2535 DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Orderina Informât on b v dsx/ R d S ON b v dgx (max) Order Number / Package loss (min) TO-39 TO-92 TO-220 TO-243AA* DIE — DN2535ND DN2540N8 DN2540ND 350V 25£i 150mA DN2535N2 DN2535N3
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DN2535
DN2540
O-220
O-243AA*
DN2535ND
DN2540N8
DN2540ND
150mA
DN2535N2
DN2535N3
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Untitled
Abstract: No abstract text available
Text: ^ TP o TP2516 Supertex inc. 252 Low Thresh old P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^ G S th b v dqs (max) (max) (min) TO-243AA* DICE+ -160V 12£2 -2.4V -0.75A — TP2516ND -200V 12Î2 -2.4V -0.75A TP2520N8 TP2520ND z ^D S (O N )
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TP2516
O-243AA*
TP2520N8
TP2516ND
TP2520ND
-160V
-200V
OT-89.
TP2516/TP2520
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