Untitled
Abstract: No abstract text available
Text: 1.5 0.7 0.8 0.7 1.5 （0.3 （1.8) （0.4) 1.0 1.5 0.7 1.5 （0.4) 1.5±0.1 0.1) 0.8 MIN 4.35 MAX 2.5±0.1 0.8 MIN 外形寸法図・参考パターン寸法 ●SOT-89-5 •外形寸法図 Unit: mm ■参考パターンレイアウト 2.0 テーピング仕様 / Taping Specifications
|
Original
|
PDF
|
OT-89-5
000pcs/reel
OT89-5
OT-89-5æ
OT-89-5
UL94V-0
|
st microelectronics powerso-10 marking
Abstract: TLPxxG DA108S1 LCP1511D TLP140M VDE0433 VDE0878 B1000-5
Text: TLPxxM/G/G-1 TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any sensitive telecom equipment requiring protection against lightning : Analog and ISDN line cards Main Distribution Frames GND TIP
|
Original
|
PDF
|
PowerSO-10TM
st microelectronics powerso-10 marking
TLPxxG
DA108S1
LCP1511D
TLP140M
VDE0433
VDE0878
B1000-5
|
RBO08-40G
Abstract: RBO08-40T RBO08-40M VF13 aluminium plane heatsink
Text: RBO08-40G/M/T REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.
|
Original
|
PDF
|
RBO08-40G/M/T
RBO08-40G
PowerSO-10TM
RBO08-40M
RBO08-40G
RBO08-40T
RBO08-40M
VF13
aluminium plane heatsink
|
tip 149
Abstract: SO10 package st microelectronics powerso-10 st microelectronics powerso-10 marking tip 143 DA108S1 LCP1511D TLP140M VDE0433 VDE0878
Text: TLPxxM/G/G-1 TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any sensitive telecom equipment requiring protection against lightning : Analog and ISDN line cards Main Distribution Frames GND TIP
|
Original
|
PDF
|
PowerSO-10TM
tip 149
SO10 package
st microelectronics powerso-10
st microelectronics powerso-10 marking
tip 143
DA108S1
LCP1511D
TLP140M
VDE0433
VDE0878
|
diode ir31
Abstract: TRANSIL RBO08-40G transil diode equivalent transistor marking code SGs IR31 RBO08-40M RBO08-40T VF13
Text: RBO08-40G/M/T REVERSEDBATTERYAND Application Specific Discretes A.S.D.TM OVERVOLTAGEPROTECTIONCIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.
|
Original
|
PDF
|
RBO08-40G/M/T
RBO08-40G
PowerSO-10TM
RBO08-40M
diode ir31
TRANSIL
RBO08-40G
transil diode equivalent
transistor marking code SGs
IR31
RBO08-40M
RBO08-40T
VF13
|
schaffner ri 229 pc
Abstract: Schaffner it 245 Schaffner NSG 510 RBO40-40G RBO40-40M RBO40-40T VF13 load dump pulse Schaffner load dump generator diode ir31
Text: RBO40-40G/M/T REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES PROTECTION AGAINST "LOAD DUMP" PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min.
|
Original
|
PDF
|
RBO40-40G/M/T
RBO40-40G
PowerSO-10TM
RBO40-40M
O220AB
RBO40-40T
schaffner ri 229 pc
Schaffner it 245
Schaffner NSG 510
RBO40-40G
RBO40-40M
RBO40-40T
VF13
load dump pulse
Schaffner load dump generator
diode ir31
|
schaffner ri 229 pc
Abstract: SCHAFFNER NSG load dump pulse IR31 RBO40-40G RBO40-40M RBO40-40T VF13 marking code, t2
Text: RBO40-40G/M/T REVERSEDBATTERYAND Application Specific Discretes A.S.D.TM OVERVOLTAGEPROTECTIONCIRCUIT RBO FEATURES PROTECTION AGAINST ”LOAD DUMP” PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min.
|
Original
|
PDF
|
RBO40-40G/M/T
RBO40-40G
PowerSO-10TM
RBO40-40M
O220AB
RBO40-40T
schaffner ri 229 pc
SCHAFFNER NSG
load dump pulse
IR31
RBO40-40G
RBO40-40M
RBO40-40T
VF13
marking code, t2
|
enamelled copper wire swg table
Abstract: RS-274-D for all smd components F585-34 BS4520 BS4584 PART 3 MELF 3514 dimensions jigs and fixtures mini project BS4584 102.5 cuzn40pb2
Text: 987 Technical portal and online community for Design Engineers - www.element-14.com PCB Prototyping Accessories . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bread Boards. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CAD Software Systems . . . . . . . . . . . . . . . . . . . . .
|
Original
|
PDF
|
element-14
127mm
210x297mm)
420x297mm)
33MTR
enamelled copper wire swg table
RS-274-D
for all smd components
F585-34
BS4520
BS4584 PART 3
MELF 3514 dimensions
jigs and fixtures mini project
BS4584 102.5
cuzn40pb2
|
TLPxxG
Abstract: st microelectronics powerso-10 marking st microelectronics powerso-10 TlP140 E4ud tlp27
Text: TLPxxM/G/G-1 TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any sensitive telecom equipment requiring protection against lightning : Analog and ISDN line cards RING TIP ct TIP Main Distribution Frames
|
Original
|
PDF
|
PowerSO-10TM
TLPxxG
st microelectronics powerso-10 marking
st microelectronics powerso-10
TlP140
E4ud
tlp27
|
TLPxxG
Abstract: No abstract text available
Text: TLPxxM/G/G-1 TRIPOLAR OVERVOLTAGE PROTECTION for TELECOM LINE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any sensitive telecom equipment requiring protection against lightning : Analog and ISDN line cards RING TIP ct TIP Main Distribution Frames
|
Original
|
PDF
|
PowerSO-10TM
TLPxxG
|
Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0610JSP R07DS0568EJ0200 Rev.2.00 Apr 16, 2012 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
|
Original
|
PDF
|
RJF0610JSP
R07DS0568EJ0200
|
Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0610DSP R07DS0560EJ0200 Rev.2.00 Apr 16, 2012 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
|
Original
|
PDF
|
RJF0610DSP
R07DS0560EJ0200
|
Untitled
Abstract: No abstract text available
Text: Target Specifications Datasheet RJF0610DSP R07DS0560EJ0100 Rev.1.00 Nov 04, 2011 Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
|
Original
|
PDF
|
RJF0610DSP
R07DS0560EJ0100
|
SOT428
Abstract: SOT404 SC18 bare Die mosfet 1200
Text: APPLICATION NOTE Surface mounted triacs and thyristors Introduction There is an ever growing need in the electronics industry for miniaturisation and cost reduction of the end product. In order to satisfy these requirements, designers are specifying Surface Mount Technology
|
Original
|
PDF
|
OT223
OT223
648mm2
OT428
OT404
SOT428
SOT404
SC18
bare Die mosfet 1200
|
|
|
MOSFET TOSHIBA 2SK
Abstract: transistor 2sk equivalent 2sk2698 mosfet equivalent 2sk2837 mosfet MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR MOSFET TOSHIBA 2Sj TO-3P package land pattern TPCS8201 toshiba lateral mos Transistor TOSHIBA 2SK
Text: [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail [ 3 ] Power MOSFET in Detail 1. Part Number Format transistors and accessories 1.1 Transistors (example) 2SK 2232 A 1st 2nd 3rd 1st group: transistor types are indicated as shown in the table immediately below.
|
Original
|
PDF
|
|
marking z52
Abstract: OF Z52 DIODE STPS0520Z STPS0520Z10K
Text: STPS0520Z SCHOTTKY RECTIFIERS MAIN PRODUCT CHARACTERISTICS IF AV 0.5 A VRRM 20 V VF (max) 0.32 V FEATURES AND BENEFITS • ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING DESCRIPTION Single Schottky rectifier suited for switch mode
|
Original
|
PDF
|
STPS0520Z
OD-123
OD-123,
marking z52
OF Z52 DIODE
STPS0520Z
STPS0520Z10K
|
marking z52
Abstract: STPS0520Z STPS0520Z10K
Text: STPS0520Z SCHOTTKY RECTIFIERS MAIN PRODUCT CHARACTERISTICS IF AV 0.5 A VRRM 20 V VF (max) 0.32 V FEATURES AND BENEFITS • ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING DESCRIPTION Single Schottky rectifier suited for switch mode
|
Original
|
PDF
|
STPS0520Z
OD-123
OD-123,
marking z52
STPS0520Z
STPS0520Z10K
|
marking z52
Abstract: No abstract text available
Text: STPS0520Z SCHOTTKY RECTIFIERS MAIN PRODUCT CHARACTERISTICS IF AV 0.5 A VRRM 20 V VF (max) 0.32 V FEATURES AND BENEFITS • ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING DESCRIPTION Single Schottky rectifier suited for switch mode
|
Original
|
PDF
|
STPS0520Z
OD-123,
marking z52
|
CMOZ5V1C
Abstract: CMOZ18VC CMOZ2V4C
Text: Central CMOZ2V4C THRU CMOZ43VC TM Semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 2% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4C Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini™
|
Original
|
PDF
|
CMOZ43VC
OD-523
CMOZ20VC
CMOZ22VC
CMOZ24VC
CMOZ27VC
CMOZ30VC
CMOZ33VC
CMOZ36VC
CMOZ39VC
CMOZ5V1C
CMOZ18VC
CMOZ2V4C
|
Zener diode MARKING H5
Abstract: marking code f4 DIODE h8 diode zener marking code f6 DIODE zener diode f7 diode marking code f6 CMOZ3V0 DIODE MARKING CODE H7 CMOZ5V6 diode marking code H5
Text: CMOZ2V4 THRU CMOZ43V SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package, designed for
|
Original
|
PDF
|
CMOZ43V
OD-523
300mW)
ELECTRCMOZ20V
CMOZ22V
CMOZ24V
CMOZ27V
CMOZ30V
CMOZ33V
CMOZ36V
Zener diode MARKING H5
marking code f4 DIODE
h8 diode zener
marking code f6 DIODE
zener diode f7
diode marking code f6
CMOZ3V0
DIODE MARKING CODE H7
CMOZ5V6
diode marking code H5
|
Untitled
Abstract: No abstract text available
Text: CMOZ2V4 THRU CMOZ43V SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package, designed for
|
Original
|
PDF
|
CMOZ43V
OD-523
300mW)
CMOZ20V
CMOZ22V
CMOZ24V
CMOZ27V
CMOZ30V
CMOZ33V
CMOZ36V
|
fr4 94v0
Abstract: No abstract text available
Text: ADVANCED Low Insertion Force PGA Sockets INTERCONNECTIONS. 5 Energy Way, P.O. Box 1019, West Warwick, Rl 02893 USA Tel. 800-424-9850 / 401-823-5200 •Fax 401-823-8723 ■Email advintcorp@aol.com • Internet http://www.advintcorp.com Molded & FR-4 Low Insertion Force PGA Sockets
|
OCR Scan
|
PDF
|
|
RB040-40G
Abstract: rb040 RB040-40T B0404 rb04040t rb040 40 A RB040-40M Schaffner it 249 NSG506 T0220AB
Text: SGS-IHOMSON ULiera «! Application Specific Discretes A.S.D. RB040-40G/M/T REVERSED BATTERY AND OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES • PROTECTION AGAINST’’LOAD DUMP’ PULSE ■ 40A DIODE TO GUARD AGAINST BATTERY REVERSAL ■ MONOLITHIC STRUCTURE FOR GREATER
|
OCR Scan
|
PDF
|
B040-40G/M/T
RB040-40G
RB040-40G
rb040
RB040-40T
B0404
rb04040t
rb040 40 A
RB040-40M
Schaffner it 249
NSG506
T0220AB
|
Untitled
Abstract: No abstract text available
Text: Z ìi STPS1L40A/U LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 1A V rrm Vf (max) 40 V PRELIMINARY DATASHEET 0.42 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ LOW FORWARD VOLTAGE DROP
|
OCR Scan
|
PDF
|
STPS1L40A/U
STPS1L40A
STPS1L40U
1998STMicroelectronics
|
