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    FR4 DIELECTRIC CONSTANT AT 900MHZ Search Results

    FR4 DIELECTRIC CONSTANT AT 900MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    WBC3-1TLC Coilcraft Inc RF Transformer, 0.3MHz Min, 900MHz Max, ROHS COMPLIANT Visit Coilcraft Inc Buy
    WBC3-1TLB Coilcraft Inc RF Transformer, 0.3MHz Min, 900MHz Max, ROHS COMPLIANT Visit Coilcraft Inc Buy
    S3LP907LB Coilcraft Inc Low Pass Filter, 900MHz, ROHS COMPLIANT, EIA STD PACKAGE SIZE 1812, 3 PIN Visit Coilcraft Inc
    S3LP907 Coilcraft Inc Low Pass Filter, 900MHz, EIA STD PACKAGE SIZE 1812, 3 PIN Visit Coilcraft Inc Buy
    S3LP907LC Coilcraft Inc Low Pass Filter, 900MHz, ROHS COMPLIANT, EIA STD PACKAGE SIZE 1812, 3 PIN Visit Coilcraft Inc

    FR4 DIELECTRIC CONSTANT AT 900MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATF-501P8

    Abstract: GETEK FR4 ATF501P8 ML200D 501p8 FR4 dielectric constant at 900mhz
    Text: ATF-501P8 900MHz High Linearity Amplifier Application Note 5025 ATF-501P8 Applications Information Description Agilent Technologies ATF-501P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. This application note covers a design approach


    Original     		PDF ATF-501P8 900MHz ATF-501P8 800MHz 2100MHz ATF501P8 AV02-xxxxEN GETEK FR4 ML200D 501p8 FR4 dielectric constant at 900mhz

    SHF-0289

    Abstract: SHF 189 FR4 dielectric constant vs temperature
    Text: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


    Original     		PDF SHF-0289 30dBm 250mA. EDS-101241 SHF 189 FR4 dielectric constant vs temperature

    FR4 dielectric constant 4.6

    Abstract: CD268 SHF-0289 Stanford SHF-0289 SHF 189 MCH18 822 a b
    Text: Preliminary Preliminary Product Description SHF-0289 Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


    Original     		PDF SHF-0289 SHF-0289 30dBm 250mA. EDS-101241 FR4 dielectric constant 4.6 CD268 Stanford SHF-0289 SHF 189 MCH18 822 a b

    Stanford SHF-0289

    Abstract: SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189
    Text: Product Description Stanford Microdevices’ SHF-0289 series is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


    Original     		PDF SHF-0289 30dBm 250mA. EDS-101241 Stanford SHF-0289 Stanford Microdevices 4 ghz MCH18 SHF 189

    DRF1601

    Abstract: smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER
    Text: UHF POWER TRANSISTOR DRF1601 NPN SiGe RF TRANSISTOR The DRF1601 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1601 can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF DRF1601 DRF1601 OT-223 900MHz 100nF 100pF smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER

    XS 630 B

    Abstract: ic smd a 1712 THN5602F NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566
    Text: THN5602F SOT-89 NPN SiGe RF POWER TRANSISTOR The THN5602F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor 4 encapsulated in a plastic SOT-89 SMD package. The THN5602F can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF THN5602F OT-89 THN5602F OT-89 465MHz 100nF XS 630 B ic smd a 1712 NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566

    twl3011

    Abstract: HB 541 Opt pam circuit gsm phone schematics BCM2121 CSP1093C DCS1800 GSM900 PCF50732 PCS1900
    Text: Demonstration Board Documentation & Applications Note rev. F TQM7M4014 Quad-Band capable Power Amplifier Module – GSM850 / GSM900 / DCS1800 / PCS1900 1. DESCRIPTION This document describes the demonstration board for the TQM7M4014 Power Amplifier Module and includes the


    Original     		PDF TQM7M4014 GSM850 GSM900 DCS1800 PCS1900 TQM7M4014 1880MHz twl3011 HB 541 Opt pam circuit gsm phone schematics BCM2121 CSP1093C PCF50732 PCS1900

    Transistor B 1566

    Abstract: ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734
    Text: UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR SOT-89 The DRF1402F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-89 SMD package. 4 The DRF1402F can be used as a driver device or an output device, depending on the specific application


    Original     		PDF DRF1402F OT-89 DRF1402F OT-89 465MHz 100nF Transistor B 1566 ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734

    900mhz-1800mhz rf frequency amplifier circuit

    Abstract: PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096
    Text: Harris Semiconductor No. AN9315.1 Harris Linear November 1996 RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Author: Sang-Gug Lee Introduction HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.


    Original     		PDF AN9315 HFA3046, HFA3096, HFA3127, HFA3128 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz 900mhz-1800mhz rf frequency amplifier circuit PNP UHF transistor HFA3046 uhf transistor amplifier complementary npn-pnp PNP transistor 263 NPN transistor mhz s-parameter silicon bipolar transistor rf power amplifier UHF pnp transistor HFA3096

    linear amplifier P1dB 36dBm

    Abstract: 5.1 amplifier PCB layout 5.1 amplifier circuits diagram RG200D LL1608FS MGA-545P8
    Text: Using the MGA-545P8 High Linearity Amplifier for Applications between 50MHz and 1000MHz Application Note 5028 Introduction RF Grounding Avago Technologies’s MGA-545P8 is an economical, low current, medium power E-pHEMT MMIC that offers very useful performance for applications below 1000MHz such


    Original     		PDF MGA-545P8 50MHz 1000MHz MGA-545P8 1000MHz 250MHz 21dBm 135mA linear amplifier P1dB 36dBm 5.1 amplifier PCB layout 5.1 amplifier circuits diagram RG200D LL1608FS

    rf transistors amplifier design and matching network

    Abstract: silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 PNP transistor 263 AN1503 ISL73096RH ISL73127RH ISL73128RH 6 "transistor arrays" ic
    Text: Application Note 1503 RF Amplifier Design Using ISL73096RH, ISL73127RH, ISL73128RH Transistor Arrays Introduction ISL73096RH This application note is focused on exploiting the RF design capabilities of ISL73096RH/ISL73127RH/ ISL73128RH transistor arrays. Detailed design


    Original     		PDF ISL73096RH, ISL73127RH, ISL73128RH ISL73096RH ISL73096RH/ISL73127RH/ 800MHz 2500MHz) 10MHz 600MHz rf transistors amplifier design and matching network silicon bipolar transistor low noise amplifier bipolar transistor ghz s-parameter intersil AN1503 PNP transistor 263 AN1503 ISL73096RH ISL73127RH 6 "transistor arrays" ic

    Untitled

    Abstract: No abstract text available
    Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction [ /Title AN93 15.1 /Subject (RF Amplifier Design Using HFA30 46, HFA30 96, HFA31 27, HFA31 28 Transistor Arrays ) /Autho r () /Keywords


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA30 HFA31 HFA3046/3096/3127/3128

    900mhz-1800mhz rf frequency amplifier circuit

    Abstract: uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 HFA3128 SOI series shunt
    Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays TM Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz 900mhz-1800mhz rf frequency amplifier circuit uhf amplifier design Transistor PNP Transistor Arrays Intersil PNP transistor 263 HFA3046 HFA3096 HFA3127 SOI series shunt

    Q545

    Abstract: SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 HFA3128 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ
    Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction AN9315.1 HFA3046 This application note is focused on exploiting the RF design capabilities of HFA3046/3096/3127/3128 transistor arrays.


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA3046 HFA3046/3096/3127/3128 800MHz 2500MHz) 10MHz Q545 SOI series shunt rf transistors amplifier design and matching network HFA3046 HFA3096 HFA3127 high gain PNP RF TRANSISTOR TRANSISTOR noise figure measurements amplifier TRANSISTOR 12 GHZ

    smd transistor k 1540

    Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js
    Text: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF DRF1401 DRF1401 OT-223 900MHz 100nF 100pF smd transistor k 1540 703 TRANSISTOR smd transistor 835 transister transister smd NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js

    SMD CAPACITORS 107E

    Abstract: CDR11BP hewlett packard semiconductor cross reference smd code marking 561B 6647a SMD transistor 431a TRANSISTOR B560 uhf wireless mic circuits CDR11BP datasheet lambda IC 101
    Text: A KYOCERA GROUP COMPANY AVX RF Microwave/Thin-Film Products AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major microwave ceramic capacitor manufacturer, it is our mission to provide First In Class Technology,


    Original     		PDF QV2000 S-RFMTF17M898-N SMD CAPACITORS 107E CDR11BP hewlett packard semiconductor cross reference smd code marking 561B 6647a SMD transistor 431a TRANSISTOR B560 uhf wireless mic circuits CDR11BP datasheet lambda IC 101

    smd TRANSISTOR code marking w2

    Abstract: g1 TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING CODE Circuit using ic 1895 bel ultrasonic movement DETECTOR CIRCUIT DIAGRAM 1895 bel ic TRANSISTOR SMD MARKING CODE ag FR4 epoxy dielectric constant 4.4 TRANSISTOR SMD MARKING CODES 431A SMD CODE MARKING
    Text: A KYOCERA GROUP COMPANY AVX RF Microwave/ Thin-Film AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major microwave ceramic capacitor manufacturer, it is our mission to provide First In Class Technology,


    Original     		PDF QV2000 S-RFTF20M798-C smd TRANSISTOR code marking w2 g1 TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING CODE Circuit using ic 1895 bel ultrasonic movement DETECTOR CIRCUIT DIAGRAM 1895 bel ic TRANSISTOR SMD MARKING CODE ag FR4 epoxy dielectric constant 4.4 TRANSISTOR SMD MARKING CODES 431A SMD CODE MARKING

    285-1

    Abstract: 6024-K bob smith termination amp 4546 jc rfics marking 76 RHO marking waveguide selective switch INA-12 INA-12063 INA-12063-BLK
    Text: 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit Surface Mount Package SOT-363 SC-70 Description Pin Connections and Package Marking The INA-12063 is a unique RFIC that combines the performance


    Original     		PDF INA-12063 OT-363 SC-70) INA-12063 285-1 6024-K bob smith termination amp 4546 jc rfics marking 76 RHO marking waveguide selective switch INA-12 INA-12063-BLK

    TQM7M4014

    Abstract: BCM2121 twl3011 E-GOLD CSP1093C DCS1800 GSM900 PCF50732 PCS1900 gsm phone schematics
    Text: Demonstration Board Documentation & Applications Note rev. H TQM7M4014 Quad-Band capable Power Amplifier Module GSM850 / GSM900 / DCS1800 / PCS1900 • Very compact size – 10x7×1.4 mm3. • High efficiency – typical GSM850 47%, GSM900 56%, DCS 51%, PCS 50%


    Original     		PDF TQM7M4014 GSM850 GSM900 DCS1800 PCS1900 J-STD-020A. TQM7M4014 BCM2121 twl3011 E-GOLD CSP1093C PCF50732 PCS1900 gsm phone schematics

    MAX2172

    Abstract: MAX2550 MAX5879 MAX2169 MAX2135A MAX2136 sdars radio tuner max2547 433MHZ amplifier 1w MAX2850
    Text: Maxim > Design Support > App Notes > Wireless and RF > APP 5100 Keywords: layout, pcb, mixed signal, rf pcb, board design, board layout, wireless, printed circuit board, stripline, transmission line APPLICATION NOTE 5100 Sep 14, 2011 General Layout Guidelines for RF and Mixed-Signal PCBs


    Original     		PDF 1700MHz 2200MHz com/an5100 AN5100, APP5100, Appnote5100, MAX2172 MAX2550 MAX5879 MAX2169 MAX2135A MAX2136 sdars radio tuner max2547 433MHZ amplifier 1w MAX2850

    Untitled

    Abstract: No abstract text available
    Text: Model X3C07P1-04S Rev A PRELIMINARY 4dB Directional Coupler Description The X3C07P1-04S is a low profile, high performance 4dB directional coupler in a new easy to use, manufacturing friendly surface mount package. It is designed for DC, WCDMA, LTE and PCS applications.


    Original     		PDF X3C07P1-04S X3C07P1-04S

    tip 217

    Abstract: BBA-519-A BBA-322-A
    Text: BBA-322-A BBA-519-A WIRELESS MADE SIMPLE BBA SERIES RF AMPLIFIER DATA GUIDE DESCRIPTION The BBA Series is a family of low-cost highperformance broadband RF amplifiers. The MODULE modules are ideally suited to a wide range of 0.360" AMP BBA-519-A amplification and buffering applications,


    Original     		PDF BBA-322-A BBA-519-A BBA-322-A tip 217 BBA-519-A

    smd code marking 561B

    Abstract: BP 43 substitution T 582 smd marking mp Germanium power CDR12
    Text: A KYOCERA GROUP COMPANY AVX RF Microwave/Thin-Film Products AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and


    Original     		PDF S-RFMTF0M0201-C smd code marking 561B BP 43 substitution T 582 smd marking mp Germanium power CDR12

    ic 4446

    Abstract: fm radio pcb
    Text: What H E W L E T T * mLliM P A C K A R D 1.5 GHz Low N oise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, Active Bias Circuit • Single Positive Supply Voltage 1.5 - 5V • Current Adjustable, 1 to 10mA • 2 dB Noise Figure at


    OCR Scan     		PDF INA-12063 OT-363 SC-70) INA-12063 OT-363 OT-143 ic 4446 fm radio pcb