D828
Abstract: No abstract text available
Text: D828 Series 1.0 Hz to 102.4 kHz 8-Bit Programmable 2" x 2" Differential Input 8-Pole Filters Description The D828 Series are digitally programmable lowpass and high-pass active filters with differential input that are tunable over a 256:1 frequency range.
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8778
Abstract: 828H8B 828H8E 828H8EX 828L8B 828L8D10 828L8D60 828L8D80 828L8E 828L8EX
Text: 828 Series 1.0 Hz to 102.4 kHz 8-Bit Programmable 2" x 2" 8-Pole Filters Description The 828 Series are digitally programmable low-pass and high-pass active filters that are tunable over a 256:1 frequency range. 828 filters are available with any one of five standard factory-set tuning ranges or
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Untitled
Abstract: No abstract text available
Text: 828 Series 1.0 Hz to 102.4 kHz 8-Bit Programmable 2" x 2" 8-Pole Filters Description The 828 Series are digitally programmable low-pass and high-pass active filters that are tunable over a 256:1 frequency range. 828 filters are available with any one of five standard factory-set tuning ranges or
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828H8B
Abstract: 828H8E 828H8EX 828L8B 828L8D10 828L8D60 828L8D80 828L8E 828L8EX 828L8EY
Text: 828 Series 1.0 Hz to 102.4 kHz 8-Bit Programmable 2" x 2" 8-Pole Filters Description The 828 Series are digitally programmable low-pass and high-pass active filters that are tunable over a 256:1 frequency range. 828 filters are available with any one of five standard factory-set tuning ranges or
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828H8B
Abstract: 828H8E 828H8EX 828L8B 828L8D10 828L8D60 828L8D80 828L8E 828L8EX 828L8EY
Text: 828 Series 1.0 Hz to 102.4 kHz 8-Bit Programmable 2" x 2" 8-Pole Filters Description The 828 Series are digitally programmable low-pass and high-pass active filters that are tunable over a 256:1 frequency range. 828 filters are available with any one of five standard factory-set tuning ranges or
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Untitled
Abstract: No abstract text available
Text: 858 Series 0.1 Hz to 102.4 kHz 8-Bit Programmable 2" x 4" 8-Pole Filters Description The 858 Series are digitally programmable low pass and high-pass active filters that are tunable over a 256:1 frequency range. 858 filters are available with any one of six standard factory-set tuning
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Untitled
Abstract: No abstract text available
Text: R858 Series 1.0 Hz to 102.4 kHz 8-Bit Programmable 2" x 4" Range Switch 8-Pole Filters Description The R858 Series are digitally programmable, 8-pole low-pass and high-pass active filters that contain a low and a high programmable frequency range, with each range tunable over a 256:1 ratio. R858 filters
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R858
Abstract: No abstract text available
Text: R858 Series 1.0 Hz to 102.4 kHz 8-Bit Programmable 2" x 4" Range Switch 8-Pole Filters Description The R858 Series are digitally programmable, 8-pole low-pass and high-pass active filters that contain a low and a high programmable frequency range, with each range tunable over a 256:1 ratio. R858 filters
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858H8B
Abstract: 858H8E 858H8EX 858L8B 858L8D10 858L8D60 858L8D80 858L8E 858L8EX 858L8EY
Text: 858 Series 0.1 Hz to 102.4 kHz 8-Bit Programmable 2" x 4" 8-Pole Filters Description The 858 Series are digitally programmable low pass and high-pass active filters that are tunable over a 256:1 frequency range. 858 filters are available with any one of six standard factory-set tuning
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R854
Abstract: fr 309 R858
Text: R858 Series 1.0 Hz to 102.4 kHz 8-Bit Programmable 2" x 4" Range Switch 8-Pole Filters Description The R858 Series are digitally programmable, 8-pole low-pass and high-pass active filters that contain a low and a high programmable frequency range, with each range tunable over a 256:1 ratio. R858 filters
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858H8B
Abstract: 858H8E 858H8EX 858L8B 858L8D10 858L8D60 858L8D80 858L8E 858L8EX 858L8EY
Text: 858 Series 0.1 Hz to 102.4 kHz 8-Bit Programmable 2" x 4" 8-Pole Filters Description The 858 Series are digitally programmable low pass and high-pass active filters that are tunable over a 256:1 frequency range. 858 filters are available with any one of six standard factory-set tuning
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BAX50
Abstract: Diode BAx Bax51 BAX48 voltage multiple diode bax49 TO77 Diode BAX 12
Text: SILICON PLANAR DIODES ULTRA FAST DIODE MATRIX ASSEMBLIES The B AX 45, B A X 46, BAX 47, B A X 48, B A X 49, B A X 50 and BAX 51 are silicon planar epitaxial diode m atrix assemblies in Jedec T O -72, T O -7 7 or T O -9 6 metal cases*. They are designed for high speed applications.
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H21B
Abstract: H21B1 H21B2 H21B3
Text: E SOLI» □1 STATE D E | 3 A 7 5 0 a i □01c17a4 fi | •— I v c w nr k/ Optoelectronic Specifications. 1mm Aperture Photon Coupled Interrupter Module H21B1,H21B2,H21B3 The GE Solid State H21B Interrupter Module is a gallium arse nide infrared emitting diode coupled to a silicon darlington con
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3A750ai
01c17a4
H21B1
H21B2
H21B3
RL-750fl
H21B
H21B3
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sfh 309 fr
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 P • GaAIAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren • Hohe Zuverlässigkeit • Enge Toleranz: Chipoberfläche/ Bauteiloberkante • Hohe Impulsbelastbarkeit
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SFH487P
switc53SbG5
950nm
fl235b05
sfh 309 fr
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QFP48-P-0707
Abstract: marking code 1bx TR 610s ccd 270k sharp 22 pin QFP48 package LZ9FD34 IC CODE 2AX 7h0 ITT PEAK tray drawing nd 0707 IR684
Text: SHARP SHARP LZ9 FD3 4 L Z 9 FD3 4 # Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. # When using the products covered herein, please observe the conditions written herein
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EL105043
270K-320K
QFP48-P-0707
AA1035
CV536
QFP48-P-0707
marking code 1bx
TR 610s
ccd 270k sharp 22 pin
QFP48 package
LZ9FD34
IC CODE 2AX
7h0 ITT
PEAK tray drawing nd 0707
IR684
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sfh 309 fr
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 A rea not tla t\ 0.6 0 .4 o :ö 1.8 3 .5 Chip position T i -29— 27 -C a th o d e (S FN Anode (S FH - I 6 .3 5 .9 409) 487) A p p ro x. weight 0 .3 g M a ß e in m m , w e n n n ic h t a n d e rs a n g e g e b e n /D im e n s io n s in m m , u n le s s o th e rw is e s p e c ifie d .
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BAW62
Abstract: FR 309 diode
Text: S ’ S’S - o z z . BAW62 HIGH-SPEED SILICON DIODE Planar epitaxial high-speed diode in a D O -35 envelope. The BAW 62 is prim arily intended for fast logic applications. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage
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BAW62
BAW62
EAVV62
FR 309 diode
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BYV24-1000
Abstract: BYV24 BYV24-1000R BYV24-800 BYV24-800R
Text: SSE D • =^53=131 005250^ 5 ■ JV N AMER PH ILIPS/DISCRETE BYV24 SERIES T -Û 3 -1 7 FAST SOFT-RECOVERY RECTIFIER DIODES Fast soft-recovery diodes in DO -4 metal envelopes especially suitable for operation as main and commutating diodes in 3-phase a.c. m otor speed control inverters and in high frequency power
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0052SCH
BYV24
BYV24-800and
BYV24-1000.
BYV24-800R
BYV24-1000R.
BYV24-800
53T31
0Q52515
BYV24-1000
BYV24-1000R
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12228
Abstract: sama logic
Text: SILICONIX 8254735 SILICONIX I N C ~D3 Î Ë | Ô5S4735 INC 0015253 03E 1 12223 DG308A/309 Quad Monolithic SPST CMOS Analog Switches Slliconlx Incorporated T-5 1 - 1 1 FEATURES BENEFITS APPLICATIONS • '+15 V Input Range • Rall-to-Rali Analog Signal Range
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5S4735
DG308A/309
T-51-11
DQ308A
DG309
DG308A
12228
sama logic
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IRFU220
Abstract: IRFR220 U222 irfu220 samsung J50V IRFR222 G31* Diode B51A 222 diode
Text: SAMSUNG ELECTRONICS INC bME D • 7 *lh4m S IKFH220/222 IRFU220/222 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • 0 Q 1 2 3 MG ITS « S H G K D-PACK Lower Rds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure
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0Q1E34D
IKI-K220/222
IRFU220/222
IRFR220/U220
IRFR222/U222
IRFR220/222
ib4142
IRFU220
IRFR220
U222
irfu220 samsung
J50V
IRFR222
G31* Diode
B51A
222 diode
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SF126
Abstract: transistor SD335 SD349 SSY20 SF829 SD 338 SF826 mikroelektronik Berlin SD339 SD338
Text: Der Kollektor ist mit der metallischen Montageflache leitend verbunden Uw e Beier Transistoren aus dem Kombinat Mikroelektronik electrónica • Band 245 UWE BEIER Transistoren aus dem Kombinat M ikroelektronik M ILITARVERLAG DER DEUTSCHEN DEM OKRATISCHEN
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cs 6202
Abstract: No abstract text available
Text: GaAs IRED & PHOTO-TRANSISTOR TLP620,-2,-4 Unit ni m m PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION T h e T O S H I B A TLP620, a — er 1 2 -2 and -4 consists of a p h o t o - t r a n s i s t o r o p t i c a l l y c o u pled to two g a l l i u m a r s e n i d e infrared emitting diode
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TLP620
TLP620,
TLP62
029dU
cs 6202
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06KA2
Abstract: 9GG33M IC 14511 pin diagram of IC 14511 Q321 TR 610s Fl Flux Cbl 36 IL223 LZ9GG33M LZ2316J
Text: SHARP SPEC No. ISSUE: E L 0 7 Z 0 4 1A Jan. 23 1996 To ; S P E C I F I C A T I O N S Product Type Single chip drive IC 270K/320K pixels B/W CCD Model No. LZ9GG33M i&This specifications contains 58 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.
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EL07Z041A
270K/320K
LZ9GG33M
D03ElbÃ
QFP48-P-0707
AAI035
0032S54
06KA2
9GG33M
IC 14511
pin diagram of IC 14511
Q321
TR 610s
Fl Flux Cbl 36
IL223
LZ9GG33M
LZ2316J
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FR 220
Abstract: fr220
Text: IRFR220/222 IRFU220/222 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PACK Lower Rds o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability
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IRFR220/222
IRFU220/222
IRFR220/222
FR 220
fr220
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