FR152
Abstract: FR153 FR154 FR155 FR156 FR157 FR201 FR202 FR203 FR204
Text: RECTIFIER DIODES, Fast Recovery, Plastic Package S t P a rt Number M axim um A v e ra g e Rectified Current at T, (A m p s i i i i i FR 151 FR 152 FR 153 FR 154 FR 155 FR 156 FR 157 FR201 FR202 FR 203 FR 204 FR 205 FR206 FR207 FR301 FR302 FR303 FR304 FR305
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FR151
FR152
FR153
FR154
FR155
FR156
FR157
FR201
FR202
FR203
FR157
FR204
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LW 6052
Abstract: No abstract text available
Text: FAILSAFE FUSE RESISTORS CUSTOM DESIGN - 1/8W to 50 WATT FR SERIES FEATURES Precision Grade Fuse Resistors! • ■ RCD’s FR series was designed to obtain the best from two devices. It combines the perform ance of a precision grade resistor with precisely controlled fusing characteristics.
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SP6355
Abstract: DO213
Text: Zener Regulator Diodes 1N6028C 1N602SD 1N5276A 1N5276A D 07 1N5276B 1N5276B (D07) MLL5276B 1N6353 SP6353 1N6029A 1N6029B 1N6029C 1N6029D 1N5277A 1N5277A {D07} 1N5277B 1N5277B (D07) MLL5277B 1N5278A 1N5278A (D07) 1N5278B 1N5278B (D07) MLL5278B 1N6354 SP6354
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DO-35
DO-213AA
SP6355
DO213
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89/WK 6052
Abstract: No abstract text available
Text: FAILSAFE FUSE RESISTORS CUSTOM DESIGN - 1/8W to 50 WATT FR SERIES FEATURES Precision Grade Fuse Resistors! • Precision performance ■ Intrinsically safe - ceramic substrate and ceramic shell result in completely flameproof design per UL and EIA ■ Fusing-to-Operating current ratios as low as 3:11
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Untitled
Abstract: No abstract text available
Text: 74ôb3Hb □□□□ÔMb TTfl FAILSAFE FUSE RESISTORS CUSTOM DESIGN - 1/8W to 50 WATT FR SERIES FEATURES Precision Grade Fuse Resistors! • Precision performance ■ Intrinsically safe - ceramic substrate and ceramic shell result in completely flameproof design per UL and EIA
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A6 sot23
Abstract: No abstract text available
Text: BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current http://onsemi.com
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BAS16LT1
A6 sot23
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diode bas32
Abstract: No abstract text available
Text: BAS32 _ HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications.
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BAS32
BAS32
OD-80
45ward
diode bas32
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FR 151 diode
Abstract: 155p A-405 FR157
Text: LESHAN RADIO COMPANY, LTD. FR151 thru FR157 1.Feature & Dimensions Fast Switching Rectifiers * Plastic package has Underwriters Laboratory Reverse Voltage 50 to 1000V Forward Current 1.5A Flammability Classification 94V-0 * High temperature metallurgically bonded construction
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FR151
FR157
MIL-S-19500
DO-15,
DO-201AD
DO-41
DO-15
26/tape
FR 151 diode
155p
A-405
FR157
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LW - 6052
Abstract: LW 6052
Text: FAILSAFE FUSE RESISTORS CUSTOM DESIGN - 1/8W to 50 WATT FR SERIES FEATURES Precision Grade Fuse Resistors! • ■ RCD's FR series was designed to obtain the best from two devices. It combines the perform ance of a precision grade resistor with precisely controlled fusing characteristics.
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ESAD39M
Abstract: esad39 A153
Text: ESAD39M C,N,D (ioa) FA ST RECOVERY DIODE : Features Insulated package by fully m olding • x>r Super high speed sw itchin g. •9— Low VF in turn on • X fltffitt Connection Diagram High reliability or2) ESAD39M-DDC D o -►] - I ESAD39M-DDN 00 ESAD39M-DDD
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ESAD39M
ESAD39M-DDC
ESAD39M-DDN
ESAD39M-DDD
esad39
A153
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FZJ 125
Abstract: FZJ 105 BYW51 BYW51F-200 T0220AB
Text: r z t S G S -m 0 M S 0 N _ BYW51 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ ■ ■ SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY
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BYW51
ISOWATT220AB)
T0220AB,
ISOWATT220AB
T0220AB
ISOWATT220AB
BYW51-2Ã
BYW51F-200
T0220AB)
SOWATT220AB)
FZJ 125
FZJ 105
BYW51
T0220AB
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BYW51F-200
Abstract: T0220AB BYW51 BYW51-200
Text: SGS-THOMSON BYW51 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AB): Insulating voltage = 2000 V DC
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BYW51
ISOWATT220AB)
T0220AB,
ISOWATT220AB
T0220AB
BYW51-200
ISOWATT220AB
BYW51F-200
125oC
7T2TS37
BYW51F-200
T0220AB
BYW51
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E2P102
Abstract: No abstract text available
Text: NTMSD2P102LR2 FETKY Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • http://onsemi.com Schottky Diode with Low VF Logic Level Gate Drive
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NTMSD2P102LR2
NTMSD2P102LR2
0E-03
0E-02
0E-01
0E-05
0E-04
E2P102
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Untitled
Abstract: No abstract text available
Text: Philips Sem iconductors Product specification Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55 QUICK REFERENCE DATA SYMBOL
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BAS55
7Z69086
BAW62
7Z73212
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DISCRETE SC blE D m 001442? flDfl • MITS OPTOELECTRONICS CATV Application (Revised) » ♦» M IT S U B IS H I FU-45SDF-36 ELEC TR O N IC DEVICE GROUP 1.3 |jm DFB-LD Module with Singlemode Fiber Pigtail FEA TUR ES ■ Distributed Feedback (DFB) laser diode
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FU-45SDF-36
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in5242
Abstract: IN5234 IN5226 IN5244 in5246 IN5224 diode IN5226 in5242 zener diode IN5240 1N5221
Text: Microsemi Corp. * $ Thp d'Ode experts / SCOTTSDALE, A 7 1N5221 thru 1N5281 DO-35 F o r m ore in fo r m a tio n call: 602 9 4I-6300 FEATURES SILICON • 2.4 TH R U 200 V O LTS 500 m W ZENER DIODES • C O M PA C T P A C K A G E • C O N S U LT FA C T O R Y FOR V O LTA G ES AB O V E 200 V
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1N5221
1N5281
94I-6300
1N5221
1N5281
DO-35
in5242
IN5234
IN5226
IN5244
in5246
IN5224
diode IN5226
in5242 zener diode
IN5240
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945B
Abstract: 955B
Text: 1SMB5913BT3 Series Preferred Device 3 Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of 3 Watt Zener diodes offers the following advantages. Specification Features • • • • • Zener Voltage Range − 3.3 V to 200 V ESD Rating of Class 3 >16 kV per Human Body Model
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1SMB5913BT3
945B
955B
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SS850
Abstract: No abstract text available
Text: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MFOD3100 Fiber O ptics — M O D Fam ily Photo D etector Diode Output M O O FAM ILY FIBER O PTICS PHO TO D ETECTO R DIODE O U T P U T . . . d e s ig n e d fo r lo w c o s t in fr a r e d r a d ia t io n d e te c t io n in h ig h f r e q u e n c y F ib e r O p t ic s S y s
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1N735
Abstract: E 435 E
Text: Microsemi Zener Regulator Diodes JAN TX1N 4127UR -1 JAN TXV1N 4127 JANTXV1N4127-1 JAN TXV1N 4127UR -1 1N4128 1N4128 D 0 3 5 JAN 1N4128 JAN 1N4128-1 JAN1N4128UR-1 JA N TX1N 4128 JANTX1N4128-1 J A NTX1N 4128U R-1 JA N TXV1N 4128 J A N TX V 1N 4128-1 JAN TXV1N 4128UR -1
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4127UR
JANTXV1N4127-1
1N4128
1N4128
1N4128-1
JAN1N4128UR-1
JANTX1N4128-1
4128U
1N735
E 435 E
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NTMSD2P102R2
Abstract: NTMSD2P102LR2 NTMSD2P102LR2G e2p102
Text: NTMSD2P102LR2 FETKY Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • • http://onsemi.com Schottky Diode with Low VF Logic Level Gate Drive
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NTMSD2P102LR2
NTMSD2P102R2/D
NTMSD2P102R2
NTMSD2P102LR2
NTMSD2P102LR2G
e2p102
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NTMSD2P102LR2
Abstract: No abstract text available
Text: NTMSD2P102LR2 FETKY Power MOSFET and Schottky Diode Dual SO−8 Package Features • High Efficiency Components in a Single SO−8 Package • High Density Power MOSFET with Low RDS on , • • • • http://onsemi.com Schottky Diode with Low VF Logic Level Gate Drive
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NTMSD2P102LR2
NTMSD2P102R2/D
NTMSD2P102LR2
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1N5917
Abstract: 1NS927
Text: 1N5913B thru 1N5956B Microsemi Corp. é The d'Ode o oe rrs SCOTTSDALE , A Z For m ore in fo rm a tio n call: ?W 6 02 941-6300 SILICON 1.5 WATT ZENER DIODES FEATURES • Z E N E R V O LT A G E 3.3V TO 200V • W ITHSTANDS LA R G E S U R G E S TR ES S ES
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1N5913B
1N5956B
1N5913
1N5914
1H5915
1N5916
1N5917
1N5918
1N5919
1N5920
1NS927
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Untitled
Abstract: No abstract text available
Text: i i ' N AMER PHILIPS/DISCRETE MAINTENANCE TYPE 25E D ^53=131 0022351 7 • BY359F—1500 J T-CZ-17 V FAST HIGH-VOLTAGE, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast recovery
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BY359Fâ
T-CZ-17
bb53131
D02235S
M1047
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1N53438
Abstract: 1n53668
Text: ZENER DIODES, 5 WATTS, PLASTIC PACKAGE Zener JEDEC p A rt Voltage * t * r Zener Test S u ffix AS S M axim um b e tte r Im ped* nee fit tj. tmA Suffix A.8.C M axim um Reverse Current at T ^ Z B ^ C M axim um Knee '.•••.'.'.'.wlr ft • Im pedance fit t »1 OmA Ron & A
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1N5333B
1H5334B
1N5335B
1N5336B
1NS337B
1N53438
1n53668
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