FR152
Abstract: FR153 FR154 FR155 FR156 FR157 FR201 FR202 FR203 FR204
Text: RECTIFIER DIODES, Fast Recovery, Plastic Package S t P a rt Number M axim um A v e ra g e Rectified Current at T, (A m p s i i i i i FR 151 FR 152 FR 153 FR 154 FR 155 FR 156 FR 157 FR201 FR202 FR 203 FR 204 FR 205 FR206 FR207 FR301 FR302 FR303 FR304 FR305
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FR151
FR152
FR153
FR154
FR155
FR156
FR157
FR201
FR202
FR203
FR157
FR204
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FR 151 diode
Abstract: HJC.1 siemens mosfet BSM 50 diode fr 207
Text: SIEMENS SIMOPAC MOSFET Modules VDS lD BSM 151 F C BSM 151 FR = 500 V = 56 A ^DS(on) = 0.11 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a 1)
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C67076-A1050-A2
C67076-A1056-A2
FR 151 diode
HJC.1
siemens mosfet BSM 50
diode fr 207
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FR 151 diode
Abstract: SiEMENS PM 350 98 SIMOPAC Module BSM 151 F C67076-A1050-A2 siemens 350 98 BSM151F siemens 350 BSM151 V103 SiEMENS EC 350 98 0
Text: 47E » SIEMENS • ÔEBSbDS SIEMENS DOEbMMI 3 ■ SIE6 AKTI ENGESELLSCHAF - r - 3 cM 5 SIMOPAC Modules Vas I = 500 V 56 A = d Ä D S o n • • • • • • • BSM 151 F BSM 151 FR = 0 .1 1 fl Power module Single switch FREDFET N channel Enhancement mode
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C67076-A1050-A2
C67076-A1056-A2
bsm151f151fr
sim00061
bsm151f
151fr
BSM151
T-39-15
FR 151 diode
SiEMENS PM 350 98
SIMOPAC Module BSM 151 F
C67076-A1050-A2
siemens 350 98
siemens 350
V103
SiEMENS EC 350 98 0
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Untitled
Abstract: No abstract text available
Text: ê235bOS 0Û20c]a4 M El SIEG SlEIVli SIEMENS AKTIENGESELLSCHAF M7E D ; T - - 3 7 -3 Ì BSM 151 F C BSM 151 FR SIMOPAC MOSFET Modules Vos Id = 500 V = 56 A ^ D S (o n ) = 1 Q • Pow er m odule • Sin gle switch • FREDFET • N channel • Enhancem ent m ode
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235bOS
fl235LiG5
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Untitled
Abstract: No abstract text available
Text: ER B 43 o.5a> : O utline D raw ings FAST RECOVERY DIODE • I t A : Features ■ S High voltage by mesa design. tjv : M arking • A ftliii High reliability A 5-3-F C o lo r code G reen BS£ » £ ■ f f liis I A p p lica tio n s A b rid g e d ty p e n a m e "'
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51-0l85
l95t/R89
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DIODE B36
Abstract: ml25 M104 T151 ETN85-O5O Transistor B36
Text: ETN85-O5O 300a POWER TRANSISTOR MODULE • f ô f t ^ Featurés • 7 'J — 'J K rt/K Including Free Wheeling Diode • ASO ti'l a ^ v Excellent Safe Operating Area •m m Insulated Type ■ ffliÊ : A p p lic a tio n s " jT • High Power Switching • AC ^ —
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ETN85-O5O
E82988
19S24^
095t/R89
DIODE B36
ml25
M104
T151
Transistor B36
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Untitled
Abstract: No abstract text available
Text: E R D 8 - 0 4 I 1 5 A SCHOTTKY BARRIER DIODE ’ Features • 1&Vk Low VF Super high speed sw itchin g. im s m e Connection Diagram High reliability by planer design • E jiH : Applications High speed pow er sw itchin g. Maximum Ratings and Characteristics
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500ns
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SM-150 diode
Abstract: No abstract text available
Text: ERC04 i.2A S ± 'J : Outline Drawings GENERAL USE RECTIFIER DIODE r -r ¿1.0 TI - 28MIN •— 7.5 8MIN - - ■ 4 * J t : Features • W ide voltage class • S ifiifS tt ■ f c iv : M arking High reliability : Applications Ä 7 -3 -F : Color code
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ERC04
28MIN
SM-150 diode
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Untitled
Abstract: No abstract text available
Text: S I G 0 3 2 i a (tiro a ) • - i & m m t ? * f * - K _ : Outline Drawings GENERAL-USE RECTIFIER DIODE : Features • Diffused-junction • H /± High voltage capability # 7 'y ! i7 > 'vxliB fisB iE • Excellent avaranche characteristics
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50HzIE3
I95t/R89)
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2RI150E
Abstract: C-15
Text: 2 R I 1 5 0 E 2 x 150a : Outline Drawings POWER DIODE MODULE 20.0 20.0 , .20.0 L?0.0, 3-»6.S • IrfJ I : Features • • • • 0 25.0 . 38.0 68.5 1 25.0_[. 31.0 68.5^ H. it ‘ Large Capacitance Insulated Type Easy Connection - *>3 Glass Passivation Chip
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2RI150E
2xi50a)
2RI150E
C-15
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6DI30M-120
Abstract: M613 T760 VE60
Text: 6D I30M -120 3 oa y<ry- i> 7, ? =L ~ : Outline Drawings POWER TRANSISTOR MODULE : Features 7.5 21 , 2B.5 19 • • hFEA^&i,' High Arm Short Circuit Capability High DC Current Gain • 7 ' J ' J FfajBL 11 |e J Including F re e w h e e lin g Diode • Ifei¥klte Insulated Type
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6DI30M-1
E82988
l95t/R89
Shl50
6DI30M-120
M613
T760
VE60
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Untitled
Abstract: No abstract text available
Text: S I E 3 1 A 2 ( i * = $ B n p ) : Outline Drawings GENERAL-USE RECTIFIER DIODE Features • D iffu s e d -ju n c tio n • Sfl5tJEt H ig h v o lta g e c a p a b ility iflB fJ ifë liE • E xce lle n t a va ra n ch e c h a ra c te ris tic s S tu d m o u n te d
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204-D295
I95t/R
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ERG51
Abstract: SIG01
Text: ERG51 ,SIG01 30A — is a m m ? 4 *— k B i n s t a : Outline Drawings Units mm GENERAL-USE RECTIFIER DIODE • 4 $ £ I Features • - 7 i'B 's J - " / '? Glass passivated c h ip • H ig h n o n -re p e titiv e peak reverse v o lta g e {VRSM) H ig h s u rg e c u rre n t ca p a b ility
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ERG51
SIG01
50HzIE?
ERG51
SIG01
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sft 322 transistor
Abstract: b322 TRANSISTOR Transistor B322 B082 M106 B321 diode sg 5 ts
Text: 1DI2OOZ-12O 200a g ± / < 7 — : Outline Drawings y < r7 - b :7 > ' > ^ ^ n . - ) U POWER TRANSISTOR MODULE 13 Z1_29 Features • ftflft/E High Voltage y i) KrtJlS • ASO Excellent Safe Operating Area • •m m Including Free Wheeling Diode Insulated Type
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1DI2OOZ-12O
e82988
-B-082
sft 322 transistor
b322 TRANSISTOR
Transistor B322
B082
M106
B321
diode sg 5 ts
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Untitled
Abstract: No abstract text available
Text: E R 6 2 - 0 0 4 io a C SCHOTTKY BARRIER DIODE * Features • &vF Low VF Super high speed switching. • 7 i Connection Diagram High reliability by planer design, : Applications High speed power switching. : M axim um Ratings and Characteristics : Absolute Maximum Ratings
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I95t/R89)
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h0263
Abstract: ESAB85-009 P151 T460 T930
Text: ESAB85-009I5A SCHOTTKY BARRIER DIODE •4tH!: : Features '1&VF Low V f S uper high speed sw itch in g . Connection Diagram H igh reliability by planer design *. A pplications H igh speed pow er sw itch in g . M axim um Ratings and C haracteristics • « * * * * £ * : A bsolute M axim um Ratings
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ESAB85-009
O-220AB
SC-46
500ns,
095t/R89
Shl50
h0263
P151
T460
T930
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PDF
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LC240A
Abstract: 30S3 M104 T151 t460 transistor
Text: 1DI24OA-O55 240a : Outline Drawings POW ER TRA N SISTO R MODULE •¡NfS : Features • iS5iifJ± High Voltage • 7 U— V tJ* — KF*3j& Including Free Wheeling Diode • ASO if],av,' Excellent Safe Operating Area - » « . Insulated Type • 3* _ 0?5 ,
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1DI24OA-O55
E82988
19S24^
l95t/R89
LC240A
30S3
M104
T151
t460 transistor
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PDF
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ERG75
Abstract: T151 T760 T810 A23G
Text: ERG75 45A : Outline Drawings FAST RECOVERY DIODE Features • t — Pl aner chip • Soft recovery type • Stud mounted : Applications • Switching power supplies • 'f-av't— Free-wheel diode • Others. M axim um Ratings and Characteristics '• Absolute Maximum Ratings
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ERG75
ERG75
eBTB30Â
EaT05
I95t/R89)
T151
T760
T810
A23G
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PDF
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pj969
Abstract: PJ 96
Text: 6D I30M -120 3 oa y<ry- i> 7, ? =L ~ : Outline Drawings POWER TRANSISTOR MODULE : Features 7.5 21 , 2B.5 19 • High Arm Short Circuit Capability • hFEA^&i,' High DC Current Gain •7' J ' J FfajBL Including Freewheeling Diode • Ifei¥klte Insulated Type
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I95t/R89
Shl50
pj969
PJ 96
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Untitled
Abstract: No abstract text available
Text: Dioden Diodes PIN-Dioden allgemeine und Schaltanwendungen PIN (General Purpose, Switching) Diodes Type Characteristics (2 a = 25 °C) Maximum Ratings Fr /f V mA CT pF at Fr V VF V Package at r, /F ä mA . a at h mA /r nA at Lead Code r* V • BA 582 35
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OD-123
OD-323
OT-23
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PDF
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UTI03
Abstract: P151 T460 YG805C04 IlI15
Text: YG805C04 2 oa * Outline Drawings S C H O T T K Y B A R R IER DIODE Features Insulated package by fully molding. • I& V f Low V f • Z4 t - Connection Diagram Super high speed switching. • -fu-i—ftmtusAnmit High reliability by planer design. I Applications
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YG805C04
SC-67
500ns,
l95t/R89
UTI03
P151
T460
IlI15
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PDF
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diode bas32
Abstract: No abstract text available
Text: BAS32 _ HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications.
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BAS32
BAS32
OD-80
45ward
diode bas32
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A6 sot23
Abstract: No abstract text available
Text: BAS16LT1 Preferred Device Switching Diode Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 75 Vdc Peak Forward Current IF 200 mAdc IFM surge 500 mAdc Peak Forward Surge Current http://onsemi.com
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Original
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BAS16LT1
A6 sot23
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PDF
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30S3
Abstract: 3R3TI20E-080 R611 T930 OE R611
Text: 3R3TI20E-080 K *1 M •%— i ' > i - ■ : Outline Drawings DIODE and TYRISTOR MODULE : Features -7 X /< > " ■ < “ '> 3 • • ASSUrt'“# ! * • -y ^ G lass P assivatio n C h ip Easy C o n n e c tio n In s u la te d T y p e • d i/d t liM * '^ £
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3R3TI20E-080
I95t/R89
Shl50
30S3
3R3TI20E-080
R611
T930
OE R611
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