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    FQPF8N80CYDTU Price and Stock

    Rochester Electronics LLC FQPF8N80CYDTU

    MOSFET N-CH 800V 8A TO220F-3
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    DigiKey FQPF8N80CYDTU Bulk 417 249
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    onsemi FQPF8N80CYDTU

    MOSFET N-CH 800V 8A TO220F-3
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    DigiKey FQPF8N80CYDTU Tube 102 1
    • 1 $2.37
    • 10 $2.37
    • 100 $1.5697
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    FQPF8N80CYDTU Tube
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    Avnet Americas FQPF8N80CYDTU Tube 0 Weeks, 2 Days 695
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    • 1000 $1.0368
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    Rochester Electronics FQPF8N80CYDTU 9,068 1
    • 1 $1.22
    • 10 $1.22
    • 100 $1.15
    • 1000 $1.04
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    TME FQPF8N80CYDTU 1
    • 1 $2.06
    • 10 $1.63
    • 100 $1.47
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    Flip Electronics FQPF8N80CYDTU 4,800
    • 1 $0.72
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    Fairchild Semiconductor Corporation FQPF8N80CYDTU

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    Bristol Electronics FQPF8N80CYDTU 1,550
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    Rochester Electronics FQPF8N80CYDTU 417 1
    • 1 $1.22
    • 10 $1.22
    • 100 $1.15
    • 1000 $1.04
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    FQPF8N80CYDTU Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FQPF8N80CYDTU Fairchild Semiconductor 800V N-Channel MOSFET Original PDF
    FQPF8N80CYDTU Fairchild Semiconductor 800V N-Channel Advance Q-FET C-Series; Package: TO-220F; No of Pins: 3; Container: Rail Original PDF
    FQPF8N80CYDTU Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 8A TO-220F Original PDF

    FQPF8N80CYDTU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQP8N80C

    Abstract: No abstract text available
    Text: TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP8N80C/FQPF8N80C/FQPF8N80CYDTU FQP8N80C/FQPF8N80C/FQPF8N80CYDTU FQP8N80C

    FQPF8N80CYDTU

    Abstract: FQPF8N80C FDB037N06 FQP8N80C fqf8n80c FQPF8N80
    Text: TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP8N80C/FQPF8N80C/FQPF8N80CYDTU FQP8N80C/FQPF8N80C/FQPF8N80CYDTU FQPF8N80CYDTU FQPF8N80C FDB037N06 FQP8N80C fqf8n80c FQPF8N80

    FQPF8N80C

    Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
    Text: FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET 800 V, 8.0 A, 1.55 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		PDF FQP8N80C FQPF8N80C FQPF8N80CYDTU FQPF8N80CYDTU Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A

    Untitled

    Abstract: No abstract text available
    Text: FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET 800 V, 8.0 A, 1.55 Ω Description Features • 8.0 A, 800 V, RDS on = 1.55 Ω (Max.) @ VGS = 10 V, ID = 4.0 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


    Original     		PDF FQP8N80C FQPF8N80C FQPF8N80CYDTU

    8n80c

    Abstract: 8n80 FQP8N80C FQPF
    Text: TM FQP8N80C/FQPF8N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP8N80C/FQPF8N80C O-220 FQPF8N80C FQPF8N80CXDTU FQPF8N80CYDTU 8n80c 8n80 FQP8N80C FQPF