Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FQI6N60 Search Results

    SF Impression Pixel

    FQI6N60 Price and Stock

    onsemi FQI6N60CTU

    MOSFET N-CH 600V 5.5A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQI6N60CTU Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.68575
    • 10000 $0.68575
    		Buy Now

    Rochester Electronics LLC FQI6N60CTU

    MOSFET N-CH 600V 5.5A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQI6N60CTU Tube 398
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.75
    • 10000 $0.75
    		Buy Now

    Fairchild Semiconductor Corporation FQI6N60CTU

    5.5A, 600V, 2ohm, N-Channel Power MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FQI6N60CTU 1,844 1
    • 1 $0.7258
    • 10 $0.7258
    • 100 $0.6823
    • 1000 $0.6169
    • 10000 $0.6169
    		Buy Now

    FQI6N60 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQI6N60 Fairchild Semiconductor 600 V N-Channel MOSFET Original PDF
    FQI6N60 Fairchild Semiconductor QFET N-CHANNEL Scan PDF
    FQI6N60C Fairchild Semiconductor 600V N-Channel Advance Q-FET C-Series Original PDF
    FQI6N60CTU Fairchild Semiconductor 600V N-Channel Advance Q-FET C-Series Original PDF

    FQI6N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQB6N60

    Abstract: No abstract text available
    Text: FQB6N60 / FQI6N60 April 2000 QFET TM FQB6N60 / FQI6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB6N60 FQI6N60 FQB6N60TM O-263

    FQB6N60C

    Abstract: FQI6N60C
    Text: FQB6N60C / FQI6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB6N60C FQI6N60C FQI6N60C

    600v 2A ultra fast recovery diode

    Abstract: FQB6N60 FQI6N60
    Text: FQB6N60 / FQI6N60 October 2008 QFET FQB6N60 / FQI6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB6N60 FQI6N60 FQI6N60 600v 2A ultra fast recovery diode

    Untitled

    Abstract: No abstract text available
    Text: FQB6N60 / FQI6N60 October 2008 QFET FQB6N60 / FQI6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB6N60 FQI6N60 FQI6N60

    FQB6N60

    Abstract: FQI6N60
    Text: FQB6N60 / FQI6N60 April 2000 QFET TM FQB6N60 / FQI6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB6N60 FQI6N60 FQI6N60

    Untitled

    Abstract: No abstract text available
    Text: FQB6N60C / FQI6N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB6N60C FQI6N60C FQI6N60C FQI6N60CTU

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ.


    Original     		PDF FQB6N60, FQI6N60 FQB6N60

    Untitled

    Abstract: No abstract text available
    Text: FQB6N60 / FQI6N60 April 2000 QFET TM FQB6N60 / FQI6N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB6N60 FQI6N60 FQI6N60TU O-262 FQI6N60

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    3phase MOSFET INVERTER

    Abstract: 2KW bldc 3 phase IGBT inverter 30KW brushless dc motor 3 phase 75kW motor soft circuit diagram PWM 220v ac stabilizer PFC 3kw FSBS15CH60 FSBB30CH60 3 phase inverters circuit diagram igbt 30kw
    Text: Motor Drive Solutions Integrated modules SPM • Discrete components • Online tools n Pmech = M • � = M • 2 • � • _ = √3 • U • I • cos (�) • � 60s _ min –1 Optimize your motor designs: less energy, cost and time.


    Original     		PDF Power247TM, 3phase MOSFET INVERTER 2KW bldc 3 phase IGBT inverter 30KW brushless dc motor 3 phase 75kW motor soft circuit diagram PWM 220v ac stabilizer PFC 3kw FSBS15CH60 FSBB30CH60 3 phase inverters circuit diagram igbt 30kw

    SSI5N60A

    Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
    Text: Discrete MOSFET TO-262 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 -


    Original     		PDF O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 SSI5N60A FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    thermistor KSD201

    Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd

    fqb6n60

    Abstract: FQI6N60
    Text: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BV dss = 600V Advanced New Design R DS ON = 1 -5 i2 Avalanche Rugged Technology lD = 6.2A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 20nC (Typ.)


    OCR Scan     		PDF FQB6N60, FQI6N60 B6N60, D2PAK/TO-263 PAK/TO-263 fqb6n60 FQI6N60

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQB6N60, FQI6N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 20nC Typ.


    OCR Scan     		PDF FQB6N60, FQI6N60 D2PAK/TO-263 D2PAK/TO-263