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    FQAF Price and Stock

    Rochester Electronics LLC FQAF17P10

    MOSFET P-CH 100V 12.4A TO3PF
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    DigiKey FQAF17P10 Tube 2,972 307
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    Rochester Electronics LLC FQAF6N90

    MOSFET N-CH 900V 4.5A TO3PF
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    DigiKey FQAF6N90 Tube 1,785 222
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    Rochester Electronics LLC FQAF19N20L

    MOSFET N-CH 200V 16A TO3PF
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    DigiKey FQAF19N20L Tube 1,659 275
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    Rochester Electronics LLC FQAF33N10

    MOSFET N-CH 100V 25.8A TO3PF
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    DigiKey FQAF33N10 Tube 1,396 386
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    Rochester Electronics LLC FQAF70N15

    MOSFET N-CH 150V 44A TO3PF
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    DigiKey FQAF70N15 Tube 925 117
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    FQAF Datasheets (74)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FQAF10N80 Fairchild Semiconductor 800V N-Channel MOSFET Original PDF
    FQAF10N80 Fairchild Semiconductor 800V N-Channel MOSFET Original PDF
    FQAF11N40 Fairchild Semiconductor 400 V N-Channel MOSFET Original PDF
    FQAF11N40 Fairchild Semiconductor QFET N-CHANNEL Scan PDF
    FQAF11N90 Fairchild Semiconductor 900 V N-Channel MOSFET Original PDF
    FQAF11N90C Fairchild Semiconductor 900V N-Channel Advance Q-FET C-series Original PDF
    FQAF12N60 Fairchild Semiconductor 600 V N-Channel MOSFET Original PDF
    FQAF12N60 Fairchild Semiconductor QFET N-CHANNEL Scan PDF
    FQAF12P20 Fairchild Semiconductor 200V P-Channel MOSFET Original PDF
    FQAF13N50 Fairchild Semiconductor 500 V N-Channel MOSFET Original PDF
    FQAF13N50 Fairchild Semiconductor QFET N-CHANNEL Scan PDF
    FQAF13N80 Fairchild Semiconductor 800 V N-Channel MOSFET Original PDF
    FQAF14N30 Fairchild Semiconductor 300 V N-Channel MOSFET Original PDF
    FQAF15N70 Fairchild Semiconductor 700 V N-Channel MOSFET Original PDF
    FQAF15N70 Fairchild Semiconductor QFET N-CHANNEL Scan PDF
    FQAF16N25 Fairchild Semiconductor 250 V N-Channel MOSFET Original PDF
    FQAF16N25C Fairchild Semiconductor 250V N-Channel Advance Q-FET C-Series Original PDF
    FQAF16N50 Fairchild Semiconductor N-Channel QFET Original PDF
    FQAF16N50 Fairchild Semiconductor 500V N-Channel MOSFET Original PDF
    FQAF17N40 Fairchild Semiconductor 400 V N-Channel MOSFET Original PDF

    FQAF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF34N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area


    Original     		PDF FQAF34N20

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF19N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ. • Extended Safe Operating Area


    Original     		PDF FQAF19N20

    Untitled

    Abstract: No abstract text available
    Text: FQAF12P20 May 2000 QFET TM FQAF12P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF12P20 -200V,

    Untitled

    Abstract: No abstract text available
    Text: FQAF16N50 N-Channel QFET MOSFET 500 V, 11.3 A, 320 mΩ Description Features • 11.3 A, 500 V, RDS on = 320 mΩ (Max.) @ VGS = 10 V, ID = 5.65 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested This N-Channel enhancement mode power MOSFET is


    Original     		PDF FQAF16N50

    FQAF17P10

    Abstract: No abstract text available
    Text: TM FQAF17P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF17P10 -100V, FQAF17P10

    FQAF70N10

    Abstract: No abstract text available
    Text: FQAF70N10 August 2000 QFET TM FQAF70N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF70N10 FQAF70N10

    FQAF65N06

    Abstract: No abstract text available
    Text: QFET TM FQAF65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF65N06 FQAF65N06

    FQAF8N80

    Abstract: No abstract text available
    Text: QFET TM FQAF8N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF8N80 FQAF8N80

    FQAF33N10L

    Abstract: No abstract text available
    Text: FQAF33N10L September 2000 QFET TM FQAF33N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF33N10L FQAF33N10L

    FQAF70N08

    Abstract: No abstract text available
    Text: FQAF70N08 August 2000 QFET TM FQAF70N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF70N08 FQAF70N08

    FQAF22P10

    Abstract: No abstract text available
    Text: TM FQAF22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF22P10 -100V, FQAF22P10

    FQAF16N25C

    Abstract: No abstract text available
    Text: FQAF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF16N25C FQAF16N25C

    FQAF5N90

    Abstract: No abstract text available
    Text: FQAF5N90 September 2000 QFET TM FQAF5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF5N90 FQAF5N90

    FQAF7N60

    Abstract: No abstract text available
    Text: FQAF7N60 April 2000 QFET TM FQAF7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF7N60 FQAF7N60

    FQAF7N90

    Abstract: 900V N-Channel QFET
    Text: QFET TM FQAF7N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF7N90 FQAF7N90 900V N-Channel QFET

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF48N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 100nC Typ. • Extended Safe Operating Area


    Original     		PDF FQAF48N20 100nC

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF16N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area


    Original     		PDF FQAF16N25

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF11N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. •


    Original     		PDF FQAF11N40

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF7N80 FEATURES BVDSS = 800V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ. • Extended Safe Operating Area


    Original     		PDF FQAF7N80

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF27N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area


    Original     		PDF FQAF27N25

    Untitled

    Abstract: No abstract text available
    Text: QFET P-CHANNEL FQAF22P10 FEATURES • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 40nC Typ. • Extended Safe Operating Area


    OCR Scan     		PDF FQAF22P10

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF16N50 FEATURES BV dss = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area


    OCR Scan     		PDF FQAF16N50

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF19N20 FEATURES BV qss = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31 nC Typ. •


    OCR Scan     		PDF FQAF19N20

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQAF30N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 90nC Typ. •


    OCR Scan     		PDF FQAF30N40