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    FQA9N90 Price and Stock

    onsemi FQA9N90C

    MOSFET N-CH 900V 9A TO3P
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    DigiKey FQA9N90C Tube 450
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    onsemi FQA9N90-F109

    MOSFET N-CH 900V 8.6A TO3PN
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    DigiKey FQA9N90-F109 Tube 450
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    Newark FQA9N90-F109 Bulk 450
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    Rochester Electronics FQA9N90-F109 665 1
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    Rochester Electronics LLC FQA9N90-F109

    POWER FIELD-EFFECT TRANSISTOR, 8
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    DigiKey FQA9N90-F109 Bulk 117
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    Flip Electronics FQA9N90C-F109

    MOSFET N-CH 900V 9A TO3P
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    DigiKey FQA9N90C-F109 Bulk 1,000
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    onsemi FQA9N90C-F109

    MOSFET N-CH 900V 9A TO3P
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    DigiKey FQA9N90C-F109 Tube
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    Rochester Electronics FQA9N90C-F109 108 1
    • 1 $2.08
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    Flip Electronics FQA9N90C-F109 26,239
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    New Advantage Corporation FQA9N90C-F109 150 1
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    FQA9N90 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQA9N90 Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA9N90 Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA9N90 Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA9N90C Fairchild Semiconductor 900 V N-Channel MOSFET Original PDF
    FQA9N90C Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA9N90C Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA9N90C Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA9N90C_F109 Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA9N90C-F109 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 900V 9A TO-3P Original PDF
    FQA9N90_F109 Fairchild Semiconductor 900V N-Channel MOSFET Original PDF
    FQA9N90-F109 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 900V 8.6A TO-3P Original PDF

    FQA9N90 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA9N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA9N90C

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA9N90_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA9N90

    FQA9N90C

    Abstract: F109
    Text: QFET FQA9N90C_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA9N90C F109

    n-channel 900v 9a

    Abstract: 900V N-Channel QFET FQA9N90C 900v mosfet F109
    Text: QFET FQA9N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA9N90C FQA9N90C n-channel 900v 9a 900V N-Channel QFET 900v mosfet F109

    FQA9N90

    Abstract: FQA9N90 equivalent
    Text: QFET TM FQA9N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA9N90 FQA9N90 FQA9N90 equivalent

    Untitled

    Abstract: No abstract text available
    Text: FQA9N90C_F109 N-Channel QFET MOSFET 900 V, 9 A, 1.4 Ω Features Description • 9 A, 900 V, RDS on = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET


    Original     		PDF FQA9N90C

    FQA9N90C

    Abstract: No abstract text available
    Text: TM FQA9N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA9N90C FQA9N90C

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA9N90_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA9N90

    Untitled

    Abstract: No abstract text available
    Text: FQA9N90_F109 N-Channel QFET MOSFET 900 V, 8.6 A, 1.3 Ω Features Description • 8.6 A, 900 V, RDS on = 1.3 Ω (Max.) @ VGS = 10 V, ID = 4.3 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


    Original     		PDF FQA9N90

    FQA9N90

    Abstract: No abstract text available
    Text: QFET FQA9N90 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA9N90 FQA9N90

    mosfet for 900V, 6A

    Abstract: F109 FQA9N90
    Text: QFET FQA9N90_F109 900V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA9N90 mosfet for 900V, 6A F109

    n-channel 900v 9a

    Abstract: FQA9N90C F109
    Text: QFET FQA9N90C 900V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA9N90C FQA9N90C n-channel 900v 9a F109

    Untitled

    Abstract: No abstract text available
    Text: FQA9N90C_F109 N-Channel QFET MOSFET 900 V, 9 A, 1.4 Ω Features Description • 9 A, 900 V, RDS on = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET


    Original     		PDF FQA9N90C

    FQA9N90C-F109

    Abstract: No abstract text available
    Text: FQA9N90C_F109 N-Channel QFET MOSFET 900 V, 9 A, 1.4 Ω Features Description • 9 A, 900 V, RDS on = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar


    Original     		PDF FQA9N90C FQA9N90C-F109

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    FQA9N90C equivalent

    Abstract: Rudy Severns "Safe Operating Area and Thermal Design" mospower applications handbook 2kw mosfet FQA11N90C Severns power mosfet 7515 siliconix mosfet discontinued AN-7514
    Text: March, 2004 Application Note 9034 Power MOSFET Avalanche Guideline Sungmo Young, Application Engineer Introduction The Power MOSFET is a very popular switching device used in switching power supplies and DC-DC converters. Their operation frequency is being continuously increased to reduce size


    Original     		PDF

    smd transistor g1

    Abstract: g1 smd transistor smd transistor 3K resistor smd 103 D4001BC OPTOCOUPLER SMPS smd transistor S1 SMD resistors 2012 Zener diode 18V SOD80 transistor SMD 104
    Text: www.fairchildsemi.com FEB219-001 User’s Guide FPP06R001 Evaluation Board Featured Fairchild Product: FPP06R001 www.fairchildsemi.com/FEBsupport 2008 Fairchild Semiconductor Corporation 1 FEBxxx_ FPP06R001 • Rev. 0.0.1 www.fairchildsemi.com Table of Contents


    Original     		PDF FEB219-001 FPP06R001 smd transistor g1 g1 smd transistor smd transistor 3K resistor smd 103 D4001BC OPTOCOUPLER SMPS smd transistor S1 SMD resistors 2012 Zener diode 18V SOD80 transistor SMD 104

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    igbt inverter welder schematic

    Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field


    Original     		PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696