HM628512C
Abstract: HM628512CLFP-5SL HM628512CLFP-7 HM628512CLP-5SL HM628512CLP-7 HM628512CLRR-5SL HM628512CLRR-7 HM628512CLTT-5SL HM628512CLTT-7 Hitachi DSA00207
Text: HM628512C Series 4 M SRAM 512-kword x 8-bit ADE-203-1212C (Z) Rev. 3.0 Aug. 5, 2002 Description The Hitac hi HM628512C is a 4-Mbit static R AM orga nized 512-kw ord × 8-bit. It rea liz es higher density, higher per forma nce and low powe r consumption by employing C MOS proc ess tec hnology (6- tr ansistor
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HM628512C
512-kword
ADE-203-1212C
512-kw
525-mil
400-mil
600-mil
HM628512CLFP-5SL
HM628512CLFP-7
HM628512CLP-5SL
HM628512CLP-7
HM628512CLRR-5SL
HM628512CLRR-7
HM628512CLTT-5SL
HM628512CLTT-7
Hitachi DSA00207
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DP-32
Abstract: HN58C1001 HN58C1001FP-15 HN58C1001P-15 HN58C1001T HN58C1001T-15
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
DP-32
HN58C1001
HN58C1001FP-15
HN58C1001P-15
HN58C1001T
HN58C1001T-15
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HM658512LP-10V
Abstract: HM658512LP-12 HM658512-10 HM658512LP-8 HM658512LP10V HM658512 HM658512LP-10 HM658512DP-8 HM658512LFP-12 HM658512DP-10
Text: HM658512 Series Maintenance only 524288-word x 8-bit High Speed Pseudo Static RAM Features Ordering Information • Single 5 V ±10% • High speed – Access time CE access time: 80/100/120 ns – Cycle time Random read/write cycle time: 130/160/190 ns
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HM658512
524288-word
32-pin
HM658512LP-10V
HM658512LP-12
HM658512-10
HM658512LP-8
HM658512LP10V
HM658512LP-10
HM658512DP-8
HM658512LFP-12
HM658512DP-10
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HM628512C
Abstract: HM628512CLFP-5SL HM628512CLFP-7 HM628512CLP-5SL HM628512CLP-7 HM628512CLRR-5SL HM628512CLRR-7 HM628512CLTT-5SL HM628512CLTT-7
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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A17a
Abstract: HM62W8512B HM62W8512BLFP-5 HM62W8512BLFP-5SL HM62W8512BLFP-5UL HM62W8512BLFP-7 HM62W8512BLFP-7SL HM62W8512BLFP-7UL HM62W8512BLTT-5
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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HD64F2166VTE33V
Abstract: HD64F2368VTE34V HD64F2318VTE25V HD64F2638F20V HD64F2168VTE33V HD64F2398F20V HD64F2676VFC33V HD6412352F20V HD64F2238BFA13V HD64F2238RTE13V
Text: H8 Family of Microcontrollers Renesas Technology America H8® Family of Microcontrollers RENESAS IS #1 WORLDWIDE IN MCU SHIPMENTS 2006 Catalog In 2005, Renesas earned a 23% share of the global MCU market — more than any other supplier — and an 11% market share in
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0806/10K/VIP/PF/SP
REU01B0011-0101
HD64F2166VTE33V
HD64F2368VTE34V
HD64F2318VTE25V
HD64F2638F20V
HD64F2168VTE33V
HD64F2398F20V
HD64F2676VFC33V
HD6412352F20V
HD64F2238BFA13V
HD64F2238RTE13V
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100-303 filter
Abstract: PCR 406 J bl p76 transistor bl p76 H8/36902 TM 1628 IC SOP HD64336912G HD64F36902G HD64F36912G REJ05B0520
Text: REJ09B0105-0300 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8/36912 Group, H8/36902 Group
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REJ09B0105-0300
H8/36912
H8/36902
16-Bit
Family/H8/300H
H8/36912F
H8/36902F
H8/36912
H8/36911
H8/36902
100-303 filter
PCR 406 J
bl p76 transistor
bl p76
TM 1628 IC SOP
HD64336912G
HD64F36902G
HD64F36912G
REJ05B0520
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658512
Abstract: 658512A HM658512ALFP-8 Hitachi DSA00164
Text: HM658512A Series 4 M PSRAM 512-kword x 8-bit 2 k Refresh ADE-203-218C(Z) Rev. 3.0 Nov. 1997 Description The Hitac hi HM658512A is a C MOS pseudo static R AM orga nized 512-kw ord × 8-bit. It re alize s higher density, higher per forma nce and low powe r consumption by employing 0. 8 µm Hi-C MOS proc ess
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HM658512A
512-kword
ADE-203-218C
512-kw
525-mil
460-mil
600-mil
D-85622
658512
658512A
HM658512ALFP-8
Hitachi DSA00164
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ADE-203-028G
Abstract: DP-32 HN58C1001 HN58C1001FP-15 HN58C1001P-15 HN58C1001T HN58C1001T-15 Hitachi DSA00358
Text: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function ADE-203-028G (Z) Rev. 7.0 Oct. 31, 1997 Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word × 8bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
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HN58C1001
128-kword
ADE-203-028G
131072-word
128-byte
D-85622
ADE-203-028G
DP-32
HN58C1001FP-15
HN58C1001P-15
HN58C1001T
HN58C1001T-15
Hitachi DSA00358
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DP-32
Abstract: HM628512CI HM628512CLFPI-7 HM628512CLPI-7 HM628512CLRRI-7 HM628512CLTTI-7 Hitachi DSA00358
Text: HM628512CI Series Wide Temperature Range Version 4 M SRAM 512-kword x 8-bit ADE-203-1211 (Z) Preliminary Rev. 0.0 Aug. 30, 2000 Description The Hitachi HM628512CI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM628512CI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process
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HM628512CI
512-kword
ADE-203-1211
32-pin
DP-32
HM628512CLFPI-7
HM628512CLPI-7
HM628512CLRRI-7
HM628512CLTTI-7
Hitachi DSA00358
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Untitled
Abstract: No abstract text available
Text: H I T A C H I / L O G I C / A R R A Y S / N E f l E O E D • 4 4 ^ 2 0 3 0 0 l 4 7 b S HN27C301P/FP Series- T -W -13- I S 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the
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HN27C301P/FP
131072-word
HN27C301P
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HN62314BP-20
Abstract: No abstract text available
Text: HN62314B Series HN62334B Series 4M' 512K x 8-bit Mask ROM • DESCRIPTION The Hitachi HN62314B/HN62334B Series is a 4-Megabit CMOS Mask Programmable Read Only Memory organized as 524,288 x 8bit. The low power consumption of this device makes it ideal for
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HN62314B
HN62334B
HN62314B/HN62334B
32-pin
32-lead
HN62314BP-20
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Untitled
Abstract: No abstract text available
Text: H I T A C H I / LOGIC/ARRAYS/MEM S IE ]> • HN28F4001 Series D01753S 2TT ■ H IT 2 Preliminary 4M 512K x 8-bit Flash Memory ■ DESCRIPTION Th^ Hitachi HN28F4001 is a 4-Megabit CMOS Rash Memory organized as 524,288 x 8-bit. The HN28F4001 is capable of in-system electrical chip and block erasure and
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HN28F4001
D01753S
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Untitled
Abstract: No abstract text available
Text: HM62V8128 Series Preliminary 131,072-word x 8-bit High Speed CMOS Static RAM The Hitachi HM62V8128 is a CMOS static RAM organized 128 kword x 8 bit. It realizes higher density, h ig h er perform ance and low pow er consum ption by em ploying 0.8 |im Hi-CMOS
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HM62V8128
072-word
525-mil
460-mil
600-mil
HM62V8128P-15
150ns
HM62V8128LP-15
HM62V8128LP-15SL
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Untitled
Abstract: No abstract text available
Text: HM62V8512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-905C (Z) Rev. 2.0 Jan. 29, 1999 Description The Hitachi HM62V8512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (J,m Hi-CMOS process technology.
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HM62V8512B
512-kword
ADE-203-905C
525-mil
400-mil
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hn62308
Abstract: HN62308B
Text: HN62308B Series 1048576 x 8-Bit CMOS MASK Programmable Read Only Memory • DESCRIPTION The HN62308B is a 8-Mbit CMOS mask-programmable ROM organized as 1048576-words x 8-bits. Realizing low power con sumption, this memory is allowed for battery operation. In addition,
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HN62308B
1048576-words
HN62308B,
200ns
100mW
FP-32D)
hn62308
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Untitled
Abstract: No abstract text available
Text: HN62344B Series 4M 512K x 8-bit Mask ROM • DESCRIPTION The H itachi H N 62344B is a 4-M e g a b it CMOS M ask Programmable Read Only Memory organized as 524,288 x 8-bit. The low power consumption of this device makes it ideal for battery powered, portable systems. In addition, the high density and
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HN62344B
62344B
32-pin
32-lead
HN62344B)
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Untitled
Abstract: No abstract text available
Text: HM628512BI Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-935A (Z) Preliminary, Rev. 0.1 Dec. 14, 1998 Description The Hitachi HM 628512BI is a 4-M bit static RAM organized 512-kword x 8-bit. It realizes higher density, higher perform ance and low pow er consumption by employing 0.35 ( A m Hi-CMOS process technology.
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HM628512BI
512-kword
ADE-203-935A
628512BI
525-mil
400-m
600-mil
40815HITEC
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Untitled
Abstract: No abstract text available
Text: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903 (Z) Preliminary, Rev. 0.0 April 24, 1998 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process technology.
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HM628512B
512-kword
ADE-203-903
525-mil
400-mil
600-mil
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Untitled
Abstract: No abstract text available
Text: HM62W8128 Seríes Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description Typ e No. A ccess tim e H M 62W 8128LP-10 100 ns H M 62W 8128LP-12 120 ns H M 62W 8128LP-1O L 100 ns H M 6 2W 81 28 LP-12 L 120 ns H M 62W 8128LP-1O SL
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HM62W8128
131072-Word
8128LP-10
8128LP-12
8128LP-1O
LP-12
8128LFP-10
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Untitled
Abstract: No abstract text available
Text: HM62W864 Series 65536-word x 8-bit Low Voltage Operation CMOS Static RAM HITACHI ADE-203-281B Z Rev. 2.0 Jul. 25, 1995 Description The Hitachi HM62W864 is a CMOS static RAM organized 64-kword X 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process technology. It
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HM62W864
65536-word
ADE-203-281B
64-kword
525-mil
460-mil
HM62W864LFP
FP-32D)
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628128
Abstract: No abstract text available
Text: A K M 628128 Series 131072-Word x 8-Bit High Speed CMOS Static RAM The A K M 628128 is a CMOS static RAM o rg anized 128- kword x 8-bit. It realizes higher density, higher p erfo rm ance and low p o w e r consum ption by em ploying 0 .8 |im H i-C M O S A K M 628128P Series
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131072-Word
628128P
6281eselect
628128
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Untitled
Abstract: No abstract text available
Text: HM628128A Series 131,072-word X 8-bit High Speed CMOS Static RAM The Hitachi HM628128A is a CMOS static RAM organized 128 kword x 8 bit. It realizes higher density, higher perform ance and low pow er consum ption by em ploying 0.8 nm Hi-CMOS process technology.
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HM628128A
072-word
525-mil
460-mil
600-mil
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Untitled
Abstract: No abstract text available
Text: HM628512A Series 524288-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-640A Z Rev. 1.0 Dec. 2, 1996 Description The Hitachi HM628512A is a 4-M bit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance, and low power consumption by employing 0.5 Jim Hi-CMOS process technology. The
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HM628512A
524288-word
ADE-203-640A
512-kword
525-mil
400-m
600-mil
28512A
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