SF51
Abstract: SF52 SF53 SF54 SF55 SF56 SF58
Text: SF51 THRU SF58 SUPERFAST RECOVERY RECTIFIERS Reverse Voltage – 50 to 600 Volts Forward Current – 5.0 Amperes Features • Low forward voltage drop • Low leakage • High current capability • Super fast switching speed • High forward surge capability
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DO-201AD
MIL-STD-202,
SF51
SF52
SF53
SF54
SF55
SF56
SF58
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SF51
Abstract: SF52 SF53 SF54 SF55 SF56 SF58
Text: SF51 THRU SF58 SUPERFAST RECOVERY RECTIFIERS Reverse Voltage – 50 to 600 Volts Forward Current – 5.0 Amperes Features • Low forward voltage drop • Low leakage • High current capability • Super fast switching speed • High forward surge capability
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DO-201AD
MIL-STD-202,
SF51
SF52
SF53
SF54
SF55
SF56
SF58
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100 Amp current 1300 volt diode
Abstract: by133 diode by133 diode equivalent HIGH CURRENT PLASTIC SILICON RECTIFIER BY133
Text: BY133 GENERAL PURPOSE PLASTIC SILICON RECTIFIER Reverse Voltage – 1300 Volts Forward Current – 1.0 Ampere Features • Low forward voltage drop • High current capability • High reliability • High forward surge current capability Mechanical Data • Case: Molded plastic, DO-41
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BY133
DO-41
MIL-STD-202,
100 Amp current 1300 volt diode
by133 diode
by133 diode equivalent
HIGH CURRENT PLASTIC SILICON RECTIFIER
BY133
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diode P600A
Abstract: P600M diode diode P600B diode P600M DC P600 diode p600j P600A P600B P600D P600G
Text: P600A THRU P600M PLASTIC SILICON RECTIFIERS Reverse Voltage - 50 to 1000 V Forward Current - 6 A Features • Low forward voltage • High current capability • High reliability • High forward surge current capability Mechanical Data • Case: Molded plastic, R-6
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P600A
P600M
P600B
P600D
P600G
P600J
P600K
P600M
diode P600A
P600M diode
diode P600B
diode P600M DC
P600
diode p600j
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MMBT-CR100-6
Abstract: 125OC
Text: MMBT-CR100-6 G A K Absolute Maximum Ratings Ta = 25 OC Rating Peak Repetitive Forward and Reverse Blocking Voltage 1) (TJ=25 to 125OC, RGK=1KΩ) Forward Current RMS (All Conduction Angles) Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 60Hz) Circuit Fusing (t=8.3ms)
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MMBT-CR100-6
125OC,
120PPS)
MMBT-CR100-6
125OC
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BAV21
Abstract: BAV19 BAV20
Text: BAV19, BAV20, BAV21 HIGH VOLTAGE GENERAL PURPOSE DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV WIV WIV 100 150 200 V V V IF(AV) 200 mA DC Forward Current IFM 500 mA Recurrent Peak Forward Current IFRM 600 mA Non-repetitive Peak Forward Surge Current
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BAV19,
BAV20,
BAV21
BAV19
BAV20
DO-35
OT-23
BAV21
BAV19
BAV20
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CR100-6
Abstract: 125OC MMBT-CR100-6
Text: MMBT-CR100-6 G A K Absolute Maximum Ratings Ta = 25 OC Rating Peak Repetitive Forward and Reverse Blocking Voltage 1) (TJ=25 to 125OC, RGK=1KΩ) Forward Current RMS (All Conduction Angles) Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 60Hz) Circuit Fusing (t=8.3ms)
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MMBT-CR100-6
125OC,
120PPS)
CR100-6
125OC
MMBT-CR100-6
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BAV21
Abstract: BAV19 BAV20
Text: BAV19, BAV20, BAV21 HIGH VOLTAGE GENERAL PURPOSE DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV WIV WIV 100 150 200 V V V IF(AV) 200 mA DC Forward Current IFM 500 mA Recurrent Peak Forward Current IFRM 600 mA Non-repetitive Peak Forward Surge Current
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BAV19,
BAV20,
BAV21
BAV19
BAV20
DO-35
OT-23
BAV21
BAV19
BAV20
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BAV19
Abstract: BAV20 BAV21
Text: BAV19, BAV20, BAV21 HIGH VOLTAGE GENERAL PURPOSE DIODES Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit WIV WIV WIV 100 150 200 V V V IF(AV) 200 mA DC Forward Current IFM 500 mA Recurrent Peak Forward Current IFRM 600 mA Non-repetitive Peak Forward Surge Current
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BAV19,
BAV20,
BAV21
BAV19
BAV20
DO-35
OT-23
BAV19
BAV20
BAV21
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1N4532
Abstract: 1N4531
Text: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings Ta = 25oC Continuous Reverse Voltage Repetitive Peak Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Symbol Value Unit VR 75 V VRRM 75
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1N4531,
1N4532
150oC
100mA,
tr30ns
1N4532
1N4531
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1N4532
Abstract: 1N4531
Text: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings Ta = 25oC Continuous Reverse Voltage Repetitive Peak Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Symbol Value Unit VR 75 V VRRM 75
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1N4531,
1N4532
150oC
100mA,
1N4532
1N4531
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1N4532
Abstract: 1N4531
Text: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings Ta = 25oC Continuous Reverse Voltage Repetitive Peak Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Symbol Value Unit VR 75 V VRRM 75
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1N4531,
1N4532
150oC
100mA,
tr30ns
1N4532
1N4531
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Forward Transformer Design
Abstract: 6.7V Zener Diode DPA425R EFD20 bobbin with 12 pin DPA425 DPA bobbin T520D227M010ASE040 T520D476M016ASE070 TL431 VR22
Text: Design Example Report Title 33W Dual Output DC-DC Power Forward Converter with Synchronous Rectification Forward using DPA425R Specification Input: 36 - 72 VDC Output: 6.7V/4.2A, 11.1V/0.5A Application Satellite Receiver Author Power Integrations Applications Department
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DPA425R
DER-29
DPA425)
300kHz
20mVp-p)
Forward Transformer Design
6.7V Zener Diode
DPA425R
EFD20 bobbin with 12 pin
DPA425
DPA bobbin
T520D227M010ASE040
T520D476M016ASE070
TL431
VR22
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1N4001
Abstract: 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
Text: 1N4001 THRU 1N4007 PLASTIC SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Ampere Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Low forward voltage • High current capability
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1N4001
1N4007
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
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ba159 diode
Abstract: diode BA159 ba159 BA157 diode ba157 equivalent of BA157 Fast Silicon Rectifiers BA157 datasheet BA158
Text: BA157 THRU BA159 FAST SILICON RECTIFIERS Reverse Voltage – 400 to 1000 Volts Forward Current – 1.0 Ampere Features •Low forward voltage •High current capability •Low leakage current •High surge capability •Low cost Absolute Maximum Ratings Ta = 25oC
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BA157
BA159
BA157
BA158
50mVp-p
ba159 diode
diode BA159
ba159
diode ba157
equivalent of BA157
Fast Silicon Rectifiers
BA157 datasheet
BA158
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BA159
Abstract: BA157 BA158 Fast Silicon Rectifiers BA157 datasheet ba159 diode diode BA159
Text: BA157 THRU BA159 FAST SILICON RECTIFIERS Reverse Voltage – 400 to 1000 Volts Forward Current – 1.0 Ampere Features •Low forward voltage •High current capability •Low leakage current •High surge capability •Low cost Absolute Maximum Ratings Ta = 25oC
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BA157
BA159
BA157
BA158
50mVp-p
BA159
BA158
Fast Silicon Rectifiers
BA157 datasheet
ba159 diode
diode BA159
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S5566B
Abstract: S5566G S5566J S5566N
Text: S5566B, S5566G, S5566J, S5566N SILICON DIFFUSED TYPE GENERAL PURPOSE RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage – 100 to 1000 Volts Average Forward Current – 1.0 Ampere Absolute Maximum Ratings Repetitive Peak Reverse Voltage Peak One Cycle Surge Forward
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S5566B,
S5566G,
S5566J,
S5566N
S5566B
S5566G
S5566J
S5566B
S5566G
S5566J
S5566N
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S5566B
Abstract: S5566G S5566J S5566N
Text: S5566B, S5566G, S5566J, S5566N SILICON DIFFUSED TYPE GENERAL PURPOSE RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage – 100 to 1000 Volts Average Forward Current – 1.0 Ampere Absolute Maximum Ratings Repetitive Peak Reverse Voltage Peak One Cycle Surge Forward
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S5566B,
S5566G,
S5566J,
S5566N
S5566B
S5566G
S5566J
S5566B
S5566G
S5566J
S5566N
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6A05
Abstract: No abstract text available
Text: 6A05 THRU 6A10 GENERAL PURPOSE PLASTIC RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 6.0 Amperes Features • High forward current capability • Construction utilizes void-free molded plastic technique • High surge current capability
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250oC/10
MIL-STD-750,
6A05
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human body detection
Abstract: LL700 LL700A diode RL 04
Text: LL700, LL700A SILICON EPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES for Ordinary Wave Detection for Super High Speed Switching Features • Low forward rise voltage VF and satisfactory wave • detection efficiency (η) • Small temperature coefficient of forward characteristic
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LL700,
LL700A
LL700
30MHz
000MHz.
human body detection
LL700
LL700A
diode RL 04
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SF12
Abstract: SF13 SF14 SF15 SF16 SF18
Text: SF11~SF18 SUPERFAST RECOVERY RECTIFIERS Reverse Voltage – 50 to 600 Volts Forward Current – 1.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. • High surge capability • Low forward voltage, high current capability
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DO-41
MIL-STD-202,
SF12
SF13
SF14
SF15
SF16
SF18
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6A05
Abstract: No abstract text available
Text: 6A05 THRU 6A10 GENERAL PURPOSE PLASTIC RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 6.0 Amperes Features • High forward current capability • Construction utilizes void-free molded plastic technique • High surge current capability
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250oC/10
MIL-STD-750,
6A05
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BA159
Abstract: BA157 BA158 Fast Silicon Rectifiers
Text: BA157 THRU BA159 FAST SILICON RECTIFIERS Reverse Voltage – 400 to 1000 Volts Forward Current – 1.0 Ampere Features •Low forward voltage •High current capability •Low leakage current •High surge capability •Low cost Absolute Maximum Ratings Ta = 25oC
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BA157
BA159
BA157
BA158
50mVp-p
BA159
BA158
Fast Silicon Rectifiers
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RL1601
Abstract: No abstract text available
Text: RL1601 THRU RL1607 GLASS PASSIVATED SILICON RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 16.0 Amperes Features • Low forward voltage drop • High current capability • High capability • High surge current capability Mechanical Data
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RL1601
RL1607
O-220A
MIL-STD-202,
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