n183 fuse
Abstract: XYP2BN135 N082 XYP2BN143 E60271 h139 lr67 c0738 N109 15
Text: Thermal Cutoffs TCO / Thermal-Links FEATURES • Small and Insulated Type • High Reliability • Solid Structure • Non-Cadmium Alloy • Taping type, Lead forming, Insulated lead, etc. available on special request • Thin Type CONSTRUCTION • Axial lead type (2BN, 1BF, and 5BE Series)
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KB847-B
Abstract: No abstract text available
Text: PHOTOCOUPLER KB847-B GENERAL PURPOSE HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE PHOTOCOUPLER SERIES FEATURES 1.Lead forming gull wing type, for surface mounting. 2.High isolation voltage between input and output (Viso=5000 Vrms). 3.Compact dual-in-line package
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KB847-B
KB847-B:
E225308.
DSAD1556
MAR/12/2005
16-pin
25pcs
KB847-B
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LTL8166FTNN
Abstract: No abstract text available
Text: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * High luminous intensity output * Low power consumption * 3.2mm dome package with 5.0mm leads pitch * Available on tape without lead forming * Low overall height available for a slim unit design
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LTL8166FTNN
10mins
MIL-STD-202F
MIL-STD-750D
MIL-STD-883D
1000HRS
LTL8166FTNN
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-6v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00013-6v0-E
MB85RC64V
MB85RC64V
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00015-4v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64V • DESCRIPTION MB85RS64V is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS501-00015-4v0-E
MB85RS64V
MB85RS64V
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00023-1v0-E Memory FRAM 2 M 256 K x 8 Bit SPI MB85RS2MT • DESCRIPTION MB85RS2MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00023-1v0-E
MB85RS2MT
MB85RS2MT
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00006-3v0-E FRAM MB85R1002A MB85R1002A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,
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NP501-00006-3v0-E
MB85R1002A
MB85R1002A
I/O16
FPT-48P-M48)
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MB85RS1MT
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00022-2v0-E Memory FRAM 1M 128 K x 8 Bit SPI MB85RS1MT • DESCRIPTION MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00022-2v0-E
MB85RS1MT
MB85RS1MT
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00021-2v0-E FRAM MB85RC128A MB85RC128A is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,
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NP501-00021-2v0-E
MB85RC128A
MB85RC128A
128K-bits
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-6v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00008-6v0-E
MB85RS128A
MB85RS128A
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-6v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS501-00014-6v0-E
MB85RS16
MB85RS16
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00025-1v0-E FRAM MB85RS2MT MB85RS2MT is a 2M-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, it is suitable for the log management and the storage of the
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NP501-00025-1v0-E
MB85RS2MT
MB85RS2MT
DIP-8P-M03)
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-7v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS501-00010-7v0-E
MB85RC16V
MB85RC16V
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–9E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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MB85RC64
MB85RC64
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AMS-DTL-2305
Abstract: E85381
Text: Dual Wall Tubing Adhesive & Encapsulant-Lined TAT-125 Adhesive-Lined, Flexible, Polyolefin Tubing Product Facts • 2:1 shrink ratio Thin adhesive lining that bonds to outer tubing and surface below, forming a positive environmental seal ■ Flexibility of both tubing and
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TAT-125
TAT-125
AMS-DTL-2305
E85381
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optocoupler P 521
Abstract: 521 optocoupler 731 OPTOCOUPLER 64 LEAD DIP OUTLINE toshiba tlp
Text: 5 -2 Standard Lead Forming 5-2-1) SURFACE MOUNT LEAD BEND OPTIONS LF1) (LF4) (LF5) “ LF5 H f» Outline 8 pin 4 pin 4 • J t I A_a_a_a n a y uuy 3 1 4 16pin 6 pin • 5 4 Pi f l FI ¿ .a fi n n n n a U S“ B i u u u u u u u u > 3 i e oT he photocoupler line-up with lead ben
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16pin
TLP731
TLP731p
optocoupler P 521
521 optocoupler
731 OPTOCOUPLER
64 LEAD DIP OUTLINE
toshiba tlp
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IC LM386
Abstract: K2416 carrier recovery PSK 1800 Hz SC11046
Text: V SIERRA SEMICONDUCTOR SC11046 2400 Bit Per Second Modem with Sendfax at 4800 bps FEATURES □ Pin compatible with Sierra SC11006 industry standard 2400 bps modem □ Complete 2400 bps modem con forming to V.22 bis and 4800/2400 bps Sendfax forming to V.27ter
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SC11006
27ter
27ter,
SCI1046
RS-232
SC11046
SC11011,
SC11019
IC LM386
K2416
carrier recovery PSK 1800 Hz
SC11046
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Untitled
Abstract: No abstract text available
Text: Sun Special Items LED LAMP WITH WIRE LEADS LED LAMP WITH FORMING LEADS LED r • C n *We can offer any of our LED lamps with forming leads. Different forming specifications can be specified. *We can offer any of our LED lamps with wire leads. Lead length can be specified.
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TO-126LP
Abstract: No abstract text available
Text: Precautions when handling transistors 1. Lead forming and cutting Sanyo transistor products are available in a range of lead configurations and lengths. As required, however, you can form or cut package leads to meet the needs of specific applications. As a general precaution, you should always handle
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Untitled
Abstract: No abstract text available
Text: ËSPIHER mm Will »SKIMS liw RW Series DIMENSIONS FEATURES • The resistive elements consist of a NI-CU alloys ■ Ideal for all types of current sensing ■ Low Inductance Forming Type MB MN MK — — <- - h- j v, >> I \\\ - 0 —3 . 6- i'
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RW05NI
RW06NI
RW08NI
RW10NI
RW12NI
RW14NI
RW05NI
1/10W
RW06NI
RW08N1
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Untitled
Abstract: No abstract text available
Text: SPECIAL TYPE FORMING DIMENSIONS MT TYPE L ► uni *d •*-p- H 0 - 3.0 DIMENSIONS (mm) STYLE Normal Miniature L P 4>D <PÜ H TYPE-25 TYPE5 0 S 6.3+ 0.5 1 0.0 ± 1 2 .3 ± 0 .5 0.6± 0.05 1 0 .0 ± 1 TYPE-50 TYPE1W S 9.0± 0.5 1 2 .5 ± 1
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TYPE-25
TYPE-50
TYPE100
TYPE200
TYPE200
fYPE300
TYPE500
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Untitled
Abstract: No abstract text available
Text: Metal Oxide Fixed Resistors L2 Forming Finished Type Straight Type Tape type •o Q rLM-i-U rrn n H L M Products marked 1/2 are L-finished type. m 6.4 2.3±0.5 0.6 27 m in 6.4 2.3±0,5 27 m in 12.0 4.0±1 38±3 15.0 5.5±1 0.6 P a c k a g in g Type m 10.0
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Untitled
Abstract: No abstract text available
Text: 7 6 8 REVISIONS ISS ZONE DESC RIPTION \PER REQUEST\DATE •-8 . 3 - - 3.9 - ¡§illtll RECOMMENDED C ABL E ST RIPPIN G D IM ’ S E E FORMING D D C NOTES: FINISH (PLATING THICKNESS IN M IC R O -IN C H E S ) 1. BRASS PER Q Q - B - 6 2 6
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fr53
Abstract: No abstract text available
Text: 6 8 REVISIONS I5S ZONE D ESCRIPT10N\FER REC l EST\CATE • 4.2 -8,3- - P R EC O M M EN D ED C A B LE STRIPPING D IM ’S FORMING STAM P IF ANY) NOTES: FINISH (PLATING THICKNESS IN MlCRO-INCHES) 1. BRASS PER Q Q - B - 6 2 6 2. BRASS PER Q Q - B - 5 1 3
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ESCRIPT10N\FER
FR-53/-16X127Ç
VS-12B/3X0a
B6GG03--
ODO--2000
121A9--003-NT3G
fr53
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