for IR IGBT die
Abstract: IRG7CH30K10B IRG7PH30K10 IRG7CH
Text: PD - 97135A IRG7CH30K10B IRG7CH30K10B IGBT Die in Wafer Form Features • Low VCE ON Trench IGBT Technology • Low Switching Losses • Maximum Junction Temperature 175 °C • 10 S short Circuit SOA • Square RBSOA • Positive VCE (ON) Temperature Co-Efficient
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7135A
IRG7CH30K10B
IRG7CH30K10B
150mm
O-247
AN-1086
for IR IGBT die
IRG7PH30K10
IRG7CH
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97060 IRGC4065B PDP TRENCH IGBT TRENCH IGBT Die in Wafer Form 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuit in PDP Application l Low VCE on and Energy per Pulse (EPULSETM) for
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O-220
IRGC4065B
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PDF
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IRGC4055B
Abstract: No abstract text available
Text: PD - 97045A IRGC4055B PDP TRENCH IGBT TRENCH IGBT Die in Wafer Form 100% Tested at Probe Available in Chip Pack, Unsawn wafer, Sawn on Film l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuit in PDP Application l Low VCE on and Energy per Pulse (EPULSETM) for
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7045A
O-220
IRGC4055B
IRGC4055B
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PDF
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168802
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1688-02 11 05 5SLY 12J1700 Fast-Diode Die VRRM = 1700 V IF = 150 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage
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12J1700
170lated
CH-5600
168802
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1689-02 11 05 5SLY 12G1700 Fast-Diode Die VRRM = 1700 V IF = 100 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage
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12G1700
170lated
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1690-02 11 05 5SLY 12F1700 Fast-Diode Die VRRM = 1700 V IF = 75 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage
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12F1700
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1689-03 04 14 5SLY 12G1700 Fast-Diode Die VRRM = 1700 V IF = 100 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage
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12G1700
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1690-03 04 14 5SLY 12F1700 Fast-Diode Die VRRM = 1700 V IF = 75 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage
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12F1700
CH-5600
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PDF
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5Sya
Abstract: 12E17
Text: Data Sheet, Doc. No. 5SYA 1691-02 11 05 5SLY 12E1700 Fast-Diode Die VRRM = 1700 V IF = 50 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage
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12E1700
CH-5600
12E1700
5Sya
12E17
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1688-03 04 14 5SLY 12J1700 Fast-Diode Die VRRM = 1700 V IF = 150 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage
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12J1700
CH-5600
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PDF
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1691-03
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1691-03 04 14 5SLY 12E1700 Fast-Diode Die VRRM = 1700 V IF = 50 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage
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12E1700
CH-5600
1691-03
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PDF
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Untitled
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-01 Dez 12 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
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12J1200
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 75 A Diode-Die 5SLY 12F1200 Die size: 7.4 x 7.4 mm Doc. No. 5SYA 1682-01 Dez 12 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
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12F1200
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-01 Dez 12 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
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12E1200
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 75 A Diode-Die 5SLY 12F1200 Die size: 7.4 x 7.4 mm Doc. No. 5SYA 1682-02 04 14 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
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12F1200
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-02 04 14 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
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12E1200
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-02 04 14 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter
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12J1200
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 100 A Diode-Die 5SLY 12G1200 Die size: 8.4 x 8.4 mm Doc. No. 5SYA 1683-02 04 14 • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
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12G1200
CH-5600
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PDF
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MJ10050
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 100 A Diode-Die 5SLY 12G1200 Die size: 8.4 x 8.4 mm Doc. No. 5SYA 1683-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
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12G1200
CH-5600
MJ10050
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PDF
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12E1200
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 50 A Diode-Die 5SLY 12E1200 Die size: 6.3 x 6.3 mm Doc. No. 5SYA 1681-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
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Original
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12E1200
CH-5600
12E1200
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PDF
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Untitled
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
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Original
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12J1200
CH-5600
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PDF
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12F1200
Abstract: No abstract text available
Text: VRRM = IF = 1200 V 75 A Diode-Die 5SLY 12F1200 Die size: 7.4 x 7.4 mm Doc. No. 5SYA 1682-00 Nov 09 • • • • Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1
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12F1200
CH-5600
12F1200
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PDF
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IGBT power loss
Abstract: three phase air-conditioner motor inverter diode EGP 30 IR igbt gate driver ic chips diode EGP IGBT DRIVER Analog Devices IR module Split System Air Conditioner 3 phase inverter 120 conduction mode waveform COMPRESSOR PLUG
Text: A New Low-Cost Flexible IGBT Inverter Power Module for Appliance Applications Mario Battello, Neeraj Keskar, Peter Wood, Mor Hezi, Alberto Guerra International Rectifier Appliance & Consumer Group, El Segundo CA as presented at PCIM China, March 2003 Abstract- Power modules for inverterized motor drive
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AN1044
IGBT power loss
three phase air-conditioner motor inverter
diode EGP 30
IR igbt gate driver ic chips
diode EGP
IGBT DRIVER Analog Devices
IR module
Split System Air Conditioner
3 phase inverter 120 conduction mode waveform
COMPRESSOR PLUG
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PDF
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600V igbt dc to dc boost converter
Abstract: IR mosfets IR power mosfet switching power supply welding rectifier circuit board MOSFET FOR 100khz SWITCHING APPLICATIONS IRFP450 igbts IGBT gate drive for a boost converter 3 watt smps circuit comparison of IGBT and MOSFET
Text: INTERNATIONAL RECTIFIER CORPORATION 100 North Sepulveda Boulevard, 8th Floor, El Segundo, California 90245 Phone: 310-726-8622 Fax: 310-252-7167 WARP SpeedTM IGBTs - Fast Enough To Replace Power MOSFETs in Switching Power Supplies at over 100 kHz Chris Ambarian - Director of Switch Strategic Marketing Chesley Chao - Strategic Marketing
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O-220
O-247
IRG4PC30W
IRFP450)
600V igbt dc to dc boost converter
IR mosfets
IR power mosfet switching power supply
welding rectifier circuit board
MOSFET FOR 100khz SWITCHING APPLICATIONS
IRFP450
igbts
IGBT gate drive for a boost converter
3 watt smps circuit
comparison of IGBT and MOSFET
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PDF
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