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    FOR HIGH-FREQUENCY STAGES UP TO 300 MHZ Search Results

    FOR HIGH-FREQUENCY STAGES UP TO 300 MHZ Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation
    TLP2304 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), High-speed / IPM driver, 1 Mbps, 3750 Vrms, 5pin SO6 Visit Toshiba Electronic Devices & Storage Corporation

    FOR HIGH-FREQUENCY STAGES UP TO 300 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF543

    Abstract: MARKING G2 Telefunken diode marking BF
    Text: BF 543 TELEFUNKEN Semiconductors N-Channel MOS-Fieldeffect Triode. Depletion Mode. Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features DIntegrated gate protection diode DLow noise figure


    Original     		PDF BF543 D-74025 MARKING G2 Telefunken diode marking BF

    S525T

    Abstract: No abstract text available
    Text: S525T Vishay Telefunken N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance


    Original     		PDF S525T S525T 200ges D-74025 20-Jan-99

    Untitled

    Abstract: No abstract text available
    Text: S525T Vishay Telefunken N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance


    Original     		PDF S525T S525T D-74025 20-Jan-99

    S525T

    Abstract: No abstract text available
    Text: S525T Vishay Semiconductors N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance


    Original     		PDF S525T S525T D-74025 20-Jan-99

    S525T

    Abstract: No abstract text available
    Text: S525T Vishay Telefunken N–Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diodes D Low feedback capacitance


    Original     		PDF S525T S525T 200design D-74025 20-Jan-99

    BF543

    Abstract: MARKING LD
    Text: BF543 N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diode D Low noise figure D Low feedback capacitance


    Original     		PDF BF543 BF543 D-74025 15-Apr MARKING LD

    BF543

    Abstract: No abstract text available
    Text: BF543 N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features D Integrated gate protection diode D Low noise figure D Low feedback capacitance


    Original     		PDF BF543 BF543 450the D-74025 11-Apr-97

    S525T

    Abstract: No abstract text available
    Text: S525T N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz Features D Integrated gate protection diode D Low feedback capacitance D Low noise figure


    Original     		PDF S525T S525T D-74025 18-Apr-96

    S525T

    Abstract: No abstract text available
    Text: S525T N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz Features D Integrated gate protection diode D Low feedback capacitance D Low noise figure


    Original     		PDF S525T S525T D-74025 26-Mar-97

    S525T

    Abstract: s525 1s525
    Text: S 525 T TELEFUNKEN Semiconductors N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz Features D Integrated gate protection diode D Low noise figure


    Original     		PDF S525T D-74025 s525 1s525

    mosfet bf 987

    Abstract: BF 987 BF987 98-7
    Text: Silicon N Channel MOSFET Triode ● For high-frequency stages up to 300 MHz, preferably in FM applications ● High overload capability BF 987 Type Marking Ordering Code BF 987 – Q62702-F35 Pin Configuration 1 2 3 D S Package1 TO-92 G Maximum Ratings Parameter


    Original     		PDF Q62702-F35 mosfet bf 987 BF 987 BF987 98-7

    Untitled

    Abstract: No abstract text available
    Text: BF999 3 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S


    Original     		PDF BF999 VPS05161 Apr-06-2005

    BB515

    Abstract: BF999
    Text: BF999 Silicon N-Channel MOSFET Triode 3  For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package


    Original     		PDF BF999 VPS05161 EHT07315 EHT07316 BB515 EHM07024 Nov-08-2002 BB515 BF999

    Untitled

    Abstract: No abstract text available
    Text: BF543 Silicon N-Channel MOSFET Triode 3  For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration


    Original     		PDF BF543 VPS05161

    BF999

    Abstract: No abstract text available
    Text: BF999 Silicon N-Channel MOSFET Triode 3  For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package


    Original     		PDF BF999 VPS05161 Nov-08-2002 BF99cal BF999

    BF999

    Abstract: triode sot23
    Text: BF999 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D 3=S - - Package


    Original     		PDF BF999 BF999 triode sot23

    BCW66

    Abstract: No abstract text available
    Text: BF999E6393 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferable in FM applications 1 • Pb-free ROHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BF999E6393 BCW66

    marking code 11s

    Abstract: MARKING CODE 21S BF543
    Text: BF543 Silicon N-Channel MOSFET Triode 3  For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration


    Original     		PDF BF543 VPS05161 marking code 11s MARKING CODE 21S BF543

    Untitled

    Abstract: No abstract text available
    Text: BF999 Silicon N-Channel MOSFET Triode • For high-frequency stages up to 300 MHz 2 3 preferably in FM applications 1 • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BF999

    BF543

    Abstract: triode sot23
    Text: BF543 Silicon N-Channel MOSFET Triode 3  For high-frequency stages up to 300 MHz preferably in FM applications IDSS = 4mA, g fs = 12mS 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF543 LDs Pin Configuration


    Original     		PDF BF543 VPS05161 Jun-28-2001 EHT07033 EHT07034 BF543 triode sot23

    Untitled

    Abstract: No abstract text available
    Text: _ S525T Vishay Telefunken N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications High frequency stages up to 300 MHz. Features • Integrated gate protection diodes • Low feedback capacitance


    OCR Scan     		PDF S525T S525T 20-Jan-99 S525T_

    bf987

    Abstract: No abstract text available
    Text: SIEMENS Silicon N Channel MOSFET Triode BF 987 • For high-frequency stages up to 300 MHz, preferably in FM applications • High overload capability Type Marking Ordering Code BF 987 - Q62702-F35 Pin Configuration 1 2 3 D S Package1 G TO-92 Maximum Ratings


    OCR Scan     		PDF Q62702-F35 fl235 bf987

    Untitled

    Abstract: No abstract text available
    Text: Temic BF543 S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications High frequency stages up to 300 MHz. Features • Integrated gate protection diode •


    OCR Scan     		PDF BF543 BF543 D-74025 11-Apr-97

    S525T

    Abstract: No abstract text available
    Text: Temic S525T S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ “ Applications High frequency stages up to 300 MHz Features • integrated gate protection diode


    OCR Scan     		PDF S525T S525T 26-Mar-97