Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512MB Unbuffered DDR2 SDRAM HYPER DIMM EBE52UC8AAFV 64M words x 64 bits, 2 Ranks Features The EBE52UC8AAFV is 64M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 256M bits DDR2 SDRAM sealed in FBGA package.
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EBE52UC8AAFV
EBE52UC8AAFV
M01E0107
E0526E12
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512MB Unbuffered DDR2 SDRAM HYPER DIMM EBE52UC8AAFV 64M words x 64 bits, 2 Ranks Description Features The EBE52UC8AAFV is 64M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 256M bits DDR2 SDRAM sealed in FBGA (µBGA)
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512MB
EBE52UC8AAFV
EBE52UC8AAFV
M01E0107
E0526E10
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DDR2-667
Abstract: ELPIDA 1216 DDR2-700 ELPIDA DDR User
Text: PRELIMINARY DATA SHEET 512MB Unbuffered DDR2 SDRAM HYPER DIMM EBE52UC8AAFV 64M words x 64 bits, 2 Ranks Features The EBE52UC8AAFV is 64M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 256M bits DDR2 SDRAM sealed in FBGA package.
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512MB
EBE52UC8AAFV
EBE52UC8AAFV
E0526E12
DDR2-667
ELPIDA 1216
DDR2-700
ELPIDA DDR User
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ELPIDA DDR User
Abstract: EDE2516
Text: PRELIMINARY DATA SHEET 512MB Unbuffered DDR2 SDRAM HYPER DIMM EBE52UC8AAFV 64M words x 64 bits, 2 Ranks Features The EBE52UC8AAFV is 64M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 256M bits DDR2 SDRAM sealed in FBGA (µBGA)
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512MB
EBE52UC8AAFV
EBE52UC8AAFV
E0526E11
M01E0107
ELPIDA DDR User
EDE2516
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Untitled
Abstract: No abstract text available
Text: 240pin DDR3 SDRAM Registered DIMM DDR3 SDRAM Registered DIMM Based on 4Gb B-die HMT451R7BFR8C HMT41GR7BFR8C HMT41GR7BFR4C HMT42GR7BFR4C HMT84GR7BMR4C *SK hynix reserves the right to change products or specifications without notice. Rev. 1.0 /May. 2014 1 Revision History
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240pin
HMT451R7BFR8C
HMT41GR7BFR8C
HMT41GR7BFR4C
HMT42GR7BFR4C
HMT84GR7BMR4C
010mm
4Gx72
HMT84GR7BMR4C
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Untitled
Abstract: No abstract text available
Text: NT2GC64B C H4C0PS / NT4GC64B(C)88C0NS / NT8GC64B(C)8HC0NS 2GB: 256M x 64 / 4GB: 512M x 64 / 8GB: 1024M x 64 PC3(L)-10600 / PC3(L)-12800 / PC3-14900 Unbuffered DDR3 SO-DIMM Based on DDR3(L)-1333/1600/1866 256Mx16 and 512Mx8 SDRAM C-Die Features •Performance:
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NT2GC64B
NT4GC64B
88C0NS
NT8GC64B
1024M
PC3-14900
256Mx16
512Mx8
204-Pin
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DDR2-667
Abstract: ELPIDA 1216 ELPIDA DDR User
Text: PRELIMINARY DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM HYPER DIMM EBE11UD8ABFV 128M words x 64 bits, 2 Ranks Features The EBE11UD8ABFV is 128M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA package.
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EBE11UD8ABFV
EBE11UD8ABFV
E0529E12
DDR2-667
ELPIDA 1216
ELPIDA DDR User
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ELPIDA DDR User
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM HYPER DIMM EBE11UD8ABFV 128M words x 64 bits, 2 Ranks Features The EBE11UD8ABFV is 128M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA)
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EBE11UD8ABFV
EBE11UD8ABFV
E0529E11
M01E0107
ELPIDA DDR User
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM HYPER DIMM EBE11UD8ABFV 128M words x 64 bits, 2 Ranks Features The EBE11UD8ABFV is 128M words × 64 bits, 2 ranks DDR2 SDRAM unbuffered module, mounting 16 pieces of 512M bits DDR2 SDRAM sealed in FBGA package.
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EBE11UD8ABFV
EBE11UD8ABFV
M01E0107
E0529E12
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NT5TU64M8BE
Abstract: PC2-5300 PC2-6400 7F7F7F0B00000000
Text: NT2GT72U4NB0BV / NT2GT72U4NB1BV NT512T72U89B0BV / NT1GT72U4PB0BV 512MB: 64M x 72 / 1GB: 128M X 72 / 2GB: 256M X 72 Registered DDR2 SDRAM DIMM 240pin Registered DDR2 SDRAM MODULE Based on 64Mx8 & 128Mx4 DDR2 SDRAM Die B Features • Differential clock inputs
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NT2GT72U4NB0BV
NT2GT72U4NB1BV
NT512T72U89B0BV
NT1GT72U4PB0BV
512MB:
240pin
64Mx8
128Mx4
512MB
NT5TU64M8BE
PC2-5300
PC2-6400
7F7F7F0B00000000
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NT5TU64M8BE
Abstract: PC2-5300 PC2-6400 NT1GT72U4PB0BV-3C DDR2 DIMM 240 pinout
Text: NT2GT72U4NB0BV / NT2GT72U4NB1BV NT512T72U89B0BV / NT1GT72U4PB0BV 512MB: 64M x 72 / 1GB: 128M X 72 / 2GB: 256M X 72 Registered DDR2 SDRAM DIMM 240pin Registered DDR2 SDRAM MODULE Based on 64Mx8 & 128Mx4 DDR2 SDRAM Die B Features • Differential clock inputs
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NT2GT72U4NB0BV
NT2GT72U4NB1BV
NT512T72U89B0BV
NT1GT72U4PB0BV
512MB:
240pin
64Mx8
128Mx4
512MB
NT5TU64M8BE
PC2-5300
PC2-6400
NT1GT72U4PB0BV-3C
DDR2 DIMM 240 pinout
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Untitled
Abstract: No abstract text available
Text: 240pin DDR3 SDRAM Registered DIMM DDR3L SDRAM Registered DIMM Based on 2Gb A-die HMT325R7AFR8A HMT351R7AFR8A HMT351R7AFR4A HMT31GR7AFR8A HMT31GR7AFR4A HMT42GR7AMR4A *Hynix Semiconductor reserves the right to change products or specifications without notice.
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240pin
HMT325R7AFR8A
HMT351R7AFR8A
HMT351R7AFR4A
HMT31GR7AFR8A
HMT31GR7AFR4A
HMT42GR7AMR4A
010mm
2Gx72
HMT42GR7AMR4A
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Abstract: No abstract text available
Text: APCPCWM_4828539:WP_0000005WP_000000 APCPCWM_4828539:WP_0000005WP_0000005 240pin DDR3 SDRAM Registered DIMM DDR3L SDRAM Registered DIMM Based on 2Gb A-die HMT325R7AFR8A HMT351R7AFR8A HMT351R7AFR4A HMT31GR7AFR8A HMT31GR7AFR4A HMT42GR7AMR4A *Hynix Semiconductor reserves the right to change products or specifications without notice.
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240pin
HMT325R7AFR8A
HMT351R7AFR8A
HMT351R7AFR4A
HMT31GR7AFR8A
HMT31GR7AFR4A
HMT42GR7AMR4A
2Gx72
HMT42GR7AMR4A
010mm
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Untitled
Abstract: No abstract text available
Text: 1 9 9 9 A N N U A L R E P O “Cypress’s priority for 1999 is to grow faster than the [semiconductor] industry.” T.J. Rodgers, 1998 Annual Report * *Analysts’ estimate of 2000 Cypress revenue; does not include IC Works revenue prior to IC Works acquisition.
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25-micron
256-Kbit
SN6000
558-AR-00
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Outline T44
Abstract: DB26
Text: Direct RDRAM DEVICE OPERATION Change History Version 1.11 October 2000 * From Version 1.11, Samsung’s RDRAM Datasheet consists of two parts. - One thing is “Device operation” which is common for all devices and another is “Characteristics description” that accounts for each own
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EP2C35F672
Abstract: 26075 EP2C20F256 TMS 3617 PQFP16 ic 4017 pin configuration 2864 rom 3844 b so 8 EP2C5 EP2C15A
Text: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.
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EP2C8F256 package
Abstract: S-2501-1 EP2C20F256 bga 896 TSMC 90nm sram
Text: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.
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bga 896
Abstract: TSMC 90nm sram EP2C50F484 APU 2471
Text: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.
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pin configuration of 7496 IC
Abstract: tms 3617 Transistor TT 2246 4174 logic hex D type flip-flop tt 2246 data sheet ic 4017 Ic D 1708 ag BLOCK DIAGRAM DESCRIPTION of IC 4017 WITH 16 PINS EP2C20F256 EP2C35F672
Text: Cyclone II Device Handbook, Volume 1 101 Innovation Drive San Jose, CA 95134 www.altera.com CII5V1-3.3 Copyright 2008 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and
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NTC THERMISTORS nd06
Abstract: ND06 Ka 2535 data sheet mc 7715 NC20 ls 7456 ntc 1,0 0914 ka 2281 0716 NTC 503 3950
Text: NTC Disc Thermistors General Purpose: ND 06 Professional: NV 06 These multi-purpose thermistors can be used for temperature control, compensation or measurement. This standard product is available in large quantities and with a short delivery time. GENERAL PURPOSE
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D 1709 N 20
Abstract: NC20 BA 5991 NM06 MC 4584
Text: NTC Thermistors Insulated Metal Case NM 06 Especially designed for mounting on a chassis or screwing on a plate, these thermistors provide an excellent thermal contact and ensure a good accuracy of measurement and alarm control for different types of equipment.
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intel 2816A
Abstract: intel 2816 eeprom for DQ 2816-A 250 2816A 2816A eeprom INTEL D 2816 intel 2816 eeprom 2816A vpp eeprom 2816A ic rom 2816
Text: ir r t e T PffigUM DNAO ftf 2816A 16K 2K x 8 ELECTRICALLY ERASABLE PROM 5 Volt Only Operation Fast Read Access Time: —2816A-2, 200ns —2816A, 250ns -2816A-3, 350ns —2816A-4, 450ns HMOS*-E Flotox Cell Design Minimum Endurance of 10,000 Erase/Write Cycles per Byte
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--2816A-2,
200ns
--2816A,
250ns
-2816A-3,
350ns
--2816A-4,
450ns
384-bit
intel 2816A
intel 2816 eeprom
for DQ 2816-A 250
2816A
2816A eeprom
INTEL D 2816
intel 2816
eeprom 2816A vpp
eeprom 2816A
ic rom 2816
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Abstract: No abstract text available
Text: MT5C2818 16K X 18 LATCHED SRAM MICRON I KWCOWWCTW MC LATCHED SRAM 16K x 18 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • • • • • • • • • Fast access times: 1 5 ,2 0 and 25ns Fast Output Enable: 6, 8 and 10ns Single +5V ±10% power supply
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MT5C2818
52-Pin
lfTSC201B
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MUX2T01
Abstract: MUX4T01
Text: •JUL J Ü 9 S3- GEC PLES S EY J U N E 1993 S E M I C O N D U C T O R S DS3820 - 1.0 CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The new CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density
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DS3820
CLA80000
CLA80k
MUX2T01
MUX4T01
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