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    FOR 2N2218A Datasheets Context Search

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    Transistor 2N2222A

    Abstract: 2N2222A Data Sheet 2N2218A-2N2219A-2N2221A-2N2222A 2N2222A Schematic symbol st 2n2222a 2N2222A TO-18 2n2222a transistor 2n2222a datasheet 2N2218A 2N2222A
    Text: 2N2218A-2N2219A 2N2221A-2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2218A, 2N2219A, 2N2221A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 for 2N2218A and 2N2219A and in Jedec TO-18 (for 2N2221A and 2N2222A) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation


    Original     		PDF 2N2218A-2N2219A 2N2221A-2N2222A 2N2218A, 2N2219A, 2N2221A 2N2222A 2N2218A 2N2219A) 2N2222A) Transistor 2N2222A 2N2222A Data Sheet 2N2218A-2N2219A-2N2221A-2N2222A 2N2222A Schematic symbol st 2n2222a 2N2222A TO-18 2n2222a transistor 2n2222a datasheet 2N2222A

    MPS-A42

    Abstract: transistor TO-92 bc108 BC237 MMBF170LT1 Series 2N2222 WITH PIN NUMBER OF transistor 2N2222 to-92
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for economical, high–volume consumer and industrial


    Original     		PDF MMBV3700LT1 MPN3700 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPS-A42 transistor TO-92 bc108 BC237 MMBF170LT1 Series 2N2222 WITH PIN NUMBER OF transistor 2N2222 to-92

    MPN3404 equivalent

    Abstract: transistor TO-92 bc108 BC237 bc140-10 to92 BC107B to92 2N2904 transistor TO92
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Pin Diode MPN3404 This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. It is supplied in a cost–effective TO–92 type plastic package for economical, high–volume consumer and industrial


    Original     		PDF MPN3404 226AC) Tempera218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MPN3404 equivalent transistor TO-92 bc108 BC237 bc140-10 to92 BC107B to92 2N2904 transistor TO92

    2N2219A

    Abstract: 2N2218A Transistor 2N2219A NPN 2N2219A 2n2219a npn transistor Transistor 2N2218a IC150
    Text: NPN 2N2218A – 2N2219A SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2218A and 2N2219A are NPN transistors mounted in TO-39 metal case . They are designed for high-speed switching applications, And feature useful current gain over a wide range of collector current, low leakage currents and low


    Original     		PDF 2N2218A 2N2219A 2N2218A 2N2219A Transistor 2N2219A NPN 2N2219A 2n2219a npn transistor Transistor 2N2218a IC150

    Untitled

    Abstract: No abstract text available
    Text: 2N2218 2N2218A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2218 and 2N2218A are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications.


    Original     		PDF 2N2218 2N2218A 2N2218 2N2218A 31-July

    Untitled

    Abstract: No abstract text available
    Text: 2N2218A TO-5 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2218A TO-5 is a silicon NPN transistor manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications.


    Original     		PDF 2N2218A 2N2218A 150mA 500mA 100kHz 150mA, 25-April

    BC237

    Abstract: Y2 sot 23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3401LT1 Silicon Pin Diode Motorola Preferred Device This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount


    Original     		PDF MMBV3401LT1 236AB) P218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 Y2 sot 23

    BC237

    Abstract: bc547 marking transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor 2SA1774 This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power


    Original     		PDF 416/SC inch/3000 2SA1774 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 bc547 marking transistor

    MV104 "direct replacement"

    Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.


    Original     		PDF MV104) MV104 226AA) Curren218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV104 "direct replacement" 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION

    BC237

    Abstract: 2n2222a SOT223 5161 common anode
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF OT-223 MV7005T1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2n2222a SOT223 5161 common anode

    motorola p1f

    Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF OT-223 PZT2907AT1 PZT2222AT1 inch/1000 PZT2222AT3 inch/4000 unit218A MSC1621T1 motorola p1f hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363

    diode l 0607

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.


    Original     		PDF M1MA141/2KT1 inch/3000 M1MA141/2KT3 inch/10 M1MA141KT1 M1MA142KT1 70/SOT M1MA142KT1 MSC1621T1 diode l 0607 BC237

    2N2222 MPS2222 npn transistor

    Abstract: transistor BF245 transistor 2N3819 SOT-223 number code book FREE BC237 2N4410 Transistor marking 651 sot363 transistor MPS5771 transistor bf391 Transistor BC107 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT651T1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for


    Original     		PDF PZT651T1 inch/1000 PZT651T3 inch/4000 P218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N2222 MPS2222 npn transistor transistor BF245 transistor 2N3819 SOT-223 number code book FREE BC237 2N4410 Transistor marking 651 sot363 transistor MPS5771 transistor bf391 Transistor BC107 motorola

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54WT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


    Original     		PDF BAT54WT1 D218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    BC237

    Abstract: 6 21 X2 marking code sot 323
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.


    Original     		PDF M1MA151/2AT1 inch/3000 M1MA151/2AT3 inch/10 M1MA151AT1 M1MA152AT1 M1MA152AT1 MSC1621T1 MSC2404 BC237 6 21 X2 marking code sot 323

    stencil

    Abstract: BC237 automatic heat detector project report BC393 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


    Original     		PDF BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent

    2N5458

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.


    Original     		PDF M1MA151/2KT1 inch/3000 M1MA151/2KT3 inch/10 M1MA151KT1 M1MA152KT1 M1MA152KT1 Volta218A MSC1621T1 2N5458 BC237

    transistor marking lv3

    Abstract: BC237 2n2222 transistor pin b c e
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAT54LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


    Original     		PDF BAT54LT1 236AB) abo218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor marking lv3 BC237 2n2222 transistor pin b c e

    EQUIVALENT FOR zt751

    Abstract: zt751 TRANSISTOR zt751 BC237 transistor BF245
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT751T1 PNP Silicon Planar Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for


    Original     		PDF PZT751T1 inch/1000 PZT751T3 inch/4000 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 EQUIVALENT FOR zt751 zt751 TRANSISTOR zt751 BC237 transistor BF245

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352WT1 MMBD352WT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237

    MPQ6700 equivalent

    Abstract: 2N5458 equivalent BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor MPQ6700 NPN/PNP Silicon 14 13 12 11 10 9 8 1 2 3 4 5 MPQ6502 For Specifications, See MPQ6001 Data COMPLEMENTARY 6 7 MPQ6600A1 TYPE B For Specifications, See MPQ6100A Data MAXIMUM RATINGS


    Original     		PDF MPQ6700 MPQ6502 MPQ6001 MPQ6600A1 MPQ6100A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MPQ6700 equivalent 2N5458 equivalent BC237

    BC237

    Abstract: 2n2222 sot-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts


    Original     		PDF MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 Therma218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 BC237 2n2222 sot-23

    TSOP 48 thermal resistance

    Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as


    Original     		PDF MMFT96218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 TSOP 48 thermal resistance BC237 Transistor BC107b motorola transistor 2N3819 BCY72

    2N3819

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for


    Original     		PDF OT-416/SC 7-inch/3000 2SC4617 SURFAC218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2N3819 BC237 BCY72