FMPG2F
Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Text: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179
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RBV-60
RBV-40
FMPG2F
marking RBV - 401
3f series surface mount transistor
FMXA-2202S
RBV-406M
SJPM-H4
FMV-3HU DIODE
diode eu02
rectifier rbv-606
marking RBV
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FMN1106S
Abstract: FMNS1106 FMXK-1086S FML-4204S capacitor+x2+GMF+40/100/21
Text: 4-3 Ultrafast Recovery Diodes VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks 600 IFSM (A) 50Hz Tj (°C) Tstg (°C) VF (V) max Single Half Sine Wave IF (A) IR IR(H) (mA) (µA) VR=VRM VR=VRM max max Tj (°C) trrq (ns) IF/IRP (mA)
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O-220F2Pin
FMN1106S
FMNS1106
FMXK-1086S
FML-4204S
capacitor+x2+GMF+40/100/21
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SK 18752
Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Text: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,
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O03ED0
dete7837
H1-O03ED0-0805020NM
SK 18752
SK 18751
2SC5586
SI-18752
fn651
709332a
CTB-34D
SLA6102
SLA4052
SI 18751
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SD MOSFET DRIVE DATASHEET 4468 8 PIN
Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Text: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720
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O03CC0
Room3202,
H1-O03CC0-1008031NM
SD MOSFET DRIVE DATASHEET 4468 8 PIN
SK 18752
ctx12s
fgt313
18752 SANKEN
sla6805m
fn651
sla6101
SK 18751
str20012
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Untitled
Abstract: No abstract text available
Text: 4-3 Ultrafast Recovery Diodes VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks Package Axial (Body Diameter/Lead Diameter) Part Number 10.0 TO-220F（Center-tap） FMXB-2102 200 300 IF (A) IR(H) IR (µA) (mA) VR=VRM VR=VRM max
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RBV-60
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Untitled
Abstract: No abstract text available
Text: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0
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O-220F
O-220F2Pin
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rjp 6065
Abstract: RJP 3045 ACS758 tda 7304 sla6805m OHD 3- 105M SLA6805MP tda 3640 pin diode tda 1053 ACS758LCB
Text: Bulletin No O03JF0 （Jan.,2010） 半導体総合カタログ I C トランジ スタ サ イリスタ ダ イオ ード サンケン電気株式会社 http://www.sanken-ele.co.jp 注意 ● 本書に記載されている内容は改良などにより予告なく変更することがありますので、最新の情報
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O03JF0
Room1013,
H1-O03JF0-1001025ND
rjp 6065
RJP 3045
ACS758
tda 7304
sla6805m
OHD 3- 105M
SLA6805MP
tda 3640
pin diode tda 1053
ACS758LCB
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FML4204S
Abstract: FMN-1106S FMN-2206S fmn2206s fmn1056s FML-4204S FMD-4206S FMNS-1106S FMX-4206S 4204S
Text: 4-3 Ultrafast Recovery Diodes VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks Package Axial (Body Diameter/Lead Diameter) Part Number IF (A) Single Half Sine Wave IR IR(H) (µA) (mA) VR=VRM VR=VRM max max Ta (°C) trrq (ns) IF/IRP
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RBV-60
FML4204S
FMN-1106S
FMN-2206S
fmn2206s
fmn1056s
FML-4204S
FMD-4206S
FMNS-1106S
FMX-4206S
4204S
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FMN-1106S
Abstract: rvb 602 diode ry2a FMN 2206 RBV-3006 ry2a zener diode reference guide RU20x RK1X fmx4202s
Text: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Ordering Information & Standard Packing Quantities . 194 Taping Specifications . 196
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RBV-60
FMN-1106S
rvb 602
diode ry2a
FMN 2206
RBV-3006
ry2a
zener diode reference guide
RU20x
RK1X
fmx4202s
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fgt313
Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Text: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156
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2SA1186
2SC4024
2SA1215
2SC4131
2SA1216
2SC4138
100VAC
2SA1294
2SC4140
fgt313
transistor fgt313
SLA4052
RG-2A Diode
SLA5222
fgt412
RBV-3006
FMN-1106S
SLA5096
diode ry2a
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SSC9512
Abstract: STR-W6750 B1560 equivalent STRW6252 str3a100 sanken audio modules 24v dc soft start motor control diagram DARLINGTON TRANSISTOR ARRAY strw6053 inverter 12v to 220 ac mosfet based
Text: Bulletin No O03EH0 （Mar, 2013） Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China
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O03EH0
STR-X6768N
TMA256B-L
STR-X6769
TMB166S-L
STR-X6769B
TMB206S-L
STR-Y6453
VR-60SS
STR-Y6456
SSC9512
STR-W6750
B1560 equivalent
STRW6252
str3a100
sanken audio modules
24v dc soft start motor control diagram
DARLINGTON TRANSISTOR ARRAY
strw6053
inverter 12v to 220 ac mosfet based
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FMXG12
Abstract: No abstract text available
Text: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0
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O-220F
O-220F2Pin
FMXG12
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Untitled
Abstract: No abstract text available
Text: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0
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O-220F
O-220F2Pin
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LM3661TL-1.40
Abstract: No abstract text available
Text: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0
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O-220F
O-220F2Pin
LM3661TL-1.40
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transistor BU 102S
Abstract: fgt313 stp 10n40 SLA4052 BU 102S c4381 high voltage 3-phase motor driver ic RELAY sz - 2103 12V C5100 MOSFET SLA5096
Text: SEMICONDUCTORS GENERAL CATALOG 2010 Sanken Electric Co., Ltd. Overseas Sales Headquarters Metropolitan Plaza Building, 1-11-1 Nishi-Ikebukuro Toshima-ku, Tokyo 171-0021, Japan Te l : 81-3-3986-6164 Fax: 81-3-3986-8637 WORLDWIDE SALES OFFICES Asia-Pacific China
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H1-O03EE0-1004015ND
transistor BU 102S
fgt313
stp 10n40
SLA4052
BU 102S
c4381
high voltage 3-phase motor driver ic
RELAY sz - 2103 12V
C5100 MOSFET
SLA5096
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FML24S
Abstract: FMX-G22
Text: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0
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O-220F
O-220F2Pin
FML24S
FMX-G22
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LM3661TL-1.40
Abstract: FMXG16S
Text: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0
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O-220F
O-220F2Pin
LM3661TL-1.40
FMXG16S
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LM3661TL-1.40
Abstract: FMXJ-2146S fmgg26
Text: 4-3 Ultrafast Recovery Diodes VRM V 200 300 400 600 186 Package Axial (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave 10.0 TO-220F(Center-tap) FMXB-2102 10.0 TO-220F(Center-tap) FML-22S 10.0 TO-220F(Center-tap) 10.0
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O-220F
O-220F2Pin
LM3661TL-1.40
FMXJ-2146S
fmgg26
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FML4204S
Abstract: fmn4206 FMXK-1086S
Text: 4-3 Ultrafast Recovery Diodes VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks Package Axial (Body Diameter/Lead Diameter) Part Number IF (A) Single Half Sine Wave IR IR(H) (µA) (mA) VR=VRM VR=VRM max max Ta (°C) trrq (ns) IF/IRP
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RBV-60
FML4204S
fmn4206
FMXK-1086S
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FML4204S
Abstract: FMN1056S fmn2206s FMN-1056S FMX1106S FMN-1106S FMN1106S FMN1106 FMXK1106 FMN-2206S
Text: 4-3 Ultrafast Recovery Diodes VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks IFSM (A) 50Hz Tj (°C) Tstg (°C) VF (V) max Single Half Sine Wave IF (A) IR IR(H) (mA) (µA) VR=VRM VR=VRM max max Tj (°C) trrq (ns) IF/IRP (mA) trrw
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fmxa-1104s
Abstract: XA1104 XA1104s 1-104S 1104S
Text: FMXA-1104S. SANKEN ELECTRIC CO., LTD. 1. Scope The present specifications shall apply to FMXA-1104S. 2. Outline High Frequency Rectification Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification,etc 3. Flammability UL94V-0 Equivalent
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FMXA-1104S.
UL94V-0
10msec.
1ms120
FMXA-1104S
XA1104
fmxa-1104s
XA1104
XA1104s
1-104S
1104S
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SK 18752
Abstract: 2SC5586 SK 18751 sla6101 sk c4467 STR20012 SLA6102 sk A1186 SK C5071 fn651
Text: SANKEN 半导体 CONTENTS 目 录 1 集成电路 1-1 1-2 2 1-1-2 开关式稳压集成电路 . 41 1-1-3 多路输出型稳压集成电路 . 93
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TF320M
TF341M
TF320M-A
TF321M-A
TF321M
TF325P
TF341S
TF521M
TF521S
SK 18752
2SC5586
SK 18751
sla6101
sk c4467
STR20012
SLA6102
sk A1186
SK C5071
fn651
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FMN-1106S
Abstract: fmn4306s FMN1106S FMXK-1086S
Text: 4-3 Ultrafast Recovery Diodes VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks IFSM (A) 50Hz Tj (°C) Tstg (°C) VF (V) max Single Half Sine Wave IF (A) IR IR(H) (mA) (µA) VR=VRM VR=VRM max max Tj (°C) trrq (ns) IF/IRP (mA) trrw
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O-220F2Pin
FMN-1106S
fmn4306s
FMN1106S
FMXK-1086S
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FMN-1106S
Abstract: LM3661TL-1.40 220F 4204S AG01 AL01 EG01 FMX-4206S FML4204S FMN-2206S
Text: 4-3 Ultrafast Recovery Diodes VRM V IF (AV) (A) Values in parentheses are for the products with heatsinks Package Axial (Body Diameter/Lead Diameter) Part Number IF (A) Single Half Sine Wave IR IR(H) (µA) (mA) VR=VRM VR=VRM max max Ta (°C) trrq (ns) IF/IRP
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SZ-10)
FMN-1106S
LM3661TL-1.40
220F
4204S
AG01
AL01
EG01
FMX-4206S
FML4204S
FMN-2206S
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