MOSFET 400V 16A
Abstract: fmv16n50e FMV16N50ES
Text: FMV16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
|
Original
|
PDF
|
FMV16N50ES
O-220F
MOSFET 400V 16A
fmv16n50e
FMV16N50ES
|
fmv16n50e
Abstract: No abstract text available
Text: FMV16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
|
Original
|
PDF
|
FMV16N50E
O-220F
fmv16n50e
|
16N50ES
Abstract: 16n50e ic MARKING QG tf 216 10a 250v TO247 CASE
Text: DATE CHECKED Nov.-21-'08 CHECKED Nov.-21-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
|
Original
|
PDF
|
FMV16N50ES
MS5F7225
H04-004-05
H04-004-03
16N50ES
16n50e
ic MARKING QG
tf 216 10a 250v
TO247 CASE
|
FMV07N90E
Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
Text: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)
|
Original
|
PDF
|
O-220
O-220F
FMH28N50ES
FMH23N50ES
FMH21N50ES
FMH280E
FMC06N80E
FMI09N70E
FMI07N70E
FMC09N70E
FMV07N90E
fmh*23N50E
FMP08N80E
FMV07N70E
FMV06N80E
FMC07N65E
FMV13N80E
D2PACK
FMI07N90E
FMV07N65E
|