mosfet 20a 300v
Abstract: No abstract text available
Text: FMC20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMC20N50E
mosfet 20a 300v
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Untitled
Abstract: No abstract text available
Text: FMC20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching
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FMC20N50ES
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FMV07N90E
Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
Text: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)
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O-220
O-220F
FMH28N50ES
FMH23N50ES
FMH21N50ES
FMH280E
FMC06N80E
FMI09N70E
FMI07N70E
FMC09N70E
FMV07N90E
fmh*23N50E
FMP08N80E
FMV07N70E
FMV06N80E
FMC07N65E
FMV13N80E
D2PACK
FMI07N90E
FMV07N65E
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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16n60e
Abstract: marking code EA SMD MOSFET mosfet smd code tc FMB20N50E mosfet marking ke
Text: Device Name DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used
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FMI20N50E
FMC20N50E
FMB20N50E
MS5F6839
MS5F68e
H04-004-03
16n60e
marking code EA SMD MOSFET
mosfet smd code tc
FMB20N50E
mosfet marking ke
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20n50e
Abstract: 20N50ES 20n50 FMB20N50ES marking code SJ transistors FMI20N50E
Text: Device Name DATE DRAWN Oct.-14-'08 CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMI20N50ES
FMC20N50ES
FMB20N50ES
MS5F7231
H04-004-03
20n50e
20N50ES
20n50
FMB20N50ES
marking code SJ transistors
FMI20N50E
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