RG5L51
Abstract: FM25L512 FM25L512-DG
Text: Preliminary FM25L512 512Kb FRAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25L512
512Kb
FM25L512,
RG5L51
RG5L51
FM25L512
FM25L512-DG
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FM25V05
Abstract: FM25L512 25V05 AN309
Text: AN309 Differences in FM25L512 and FM25V05 Applies to 512Kb SPI F-RAM Devices DESCRIPTION This document points out the differences the FM25L512 and FM25V05 F-RAM devices. For most designs, the FM25V05 device can be considered a superset of the FM25L512. The two devices are
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AN309
FM25L512
FM25V05
512Kb
FM25V05
FM25L512.
20MHz
25V05
AN309
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RG5L51
Abstract: No abstract text available
Text: Pre-Production FM25L512 512Kb F-RAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25L512
512Kb
FM25V05
RG5L51
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virage
Abstract: ARM Cortex A8 TSMC 40nm powerpc 7448 LG chem fanuc soc 916 tanner tools D945GCLF2 "ARM Cortex A8"
Text: Energy Optimizers Selects Ramtron FM25L512 F-RAM for Plogg ~ EDA Geek Page 1 of 1 home : : contact : : embedded star : : fpga : : eda blog EDA Geek - electronic design automation, semiconductor, embedded system Ads by Google Zigbee Technology Flash Memory Cell
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FM25L512
com/2008/06/30/wireless-plugs/
virage
ARM Cortex A8
TSMC 40nm
powerpc 7448
LG chem
fanuc
soc 916
tanner tools
D945GCLF2
"ARM Cortex A8"
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fram
Abstract: TDFN-8 eeprom FM25L512
Text: FRAM Page 1 of 1 FRAM Arbeitet praktisch unbegrenzt Eingebaut im drahtlosen Energiemanagement-Stecker der Plogg-Serie sorgt der F-RAM-Baustein FM25L512 für Nodelay-Schreibvorgänge und niedrigen Stromverbrauch. Dazu kommt die praktisch unbegrenzte Betriebslebensdauer von rd. 100.000 Mrd. Schreibzyklen. EEPROM dagegen kommen auf weniger als eine Mio.
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FM25L512
de/product/40723
fram
TDFN-8 eeprom
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FM25V05
Abstract: RG5L51 FM25L512-DG FM25L512
Text: Pre-Production FM25L512 512Kb F-RAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25L512
512Kb
FM25V05
RG5L51
FM25L512-DG
FM25L512
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Untitled
Abstract: No abstract text available
Text: Preliminary FM25L512 512Kb FRAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25L512
512Kb
FM25L512,
RG5L51
40MHz
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Untitled
Abstract: No abstract text available
Text: Pre-Production FM25L512 512Kb F-RAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25L512
512Kb
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Untitled
Abstract: No abstract text available
Text: Preliminary FM25L512 512Kb FRAM Serial 3V Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process
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FM25L512
512Kb
Compatib07
40MHz
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fm23mld16
Abstract: FM3316 7313 28 pin FM25L04 soic8 footprint interface 8KB ROM and 16KB RAM to 8051 FM22L16 FM6124 footprint soic28 RAMTRON
Text: Co mp uti ng M ete rin g Au tom oti ve Ind us tria l M ed ica l Sc ien tifi c g rin e t e M e tiv o tom Au ng uti p m Co fic nti e i Sc l tria s u Ind Short Form Catalog l ica d e M First Edition 2009 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine
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300-million
fm23mld16
FM3316
7313 28 pin
FM25L04
soic8 footprint
interface 8KB ROM and 16KB RAM to 8051
FM22L16
FM6124
footprint soic28
RAMTRON
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FM25V10 I2C programming example
Abstract: FM25L04 FM25xxx FM25V02 FM25V02 -G FM25H20 DFN8 FM25V05 FM25C160 FM25CL64
Text: AN-304 A Guide to SPI F-RAM Devices Covers Functional Description, Timing, Pseudo Code OVERVIEW The SPI family of F-RAM products offers the market serial high speed, low power, nonvolatile F-RAM memory. SPI F-RAM memory devices take advantage of F-RAM’s fast write performance that
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AN-304
FM25xxx.
FM24xxx
AN304
FM25L256
FM25L256B)
FM25H20
FM25V10/V05/V02
FM25V10 I2C programming example
FM25L04
FM25xxx
FM25V02
FM25V02 -G
DFN8
FM25V05
FM25C160
FM25CL64
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FM25L04
Abstract: FM25H20 AN304 AN-304 FM25040A FM25256B FM25C160 FM25CL64 FM25L16 FM25L256B
Text: AN-304 A Guide to SPI F-RAM Devices Covers Functional Description, Timing, Pseudo Code OVERVIEW The SPI family of F-RAM products offers the market serial high speed, low power, nonvolatile F-RAM memory. SPI F-RAM memory devices take advantage of F-RAM’s fast write performance that
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AN-304
FM25xxx.
FM24xxx
AN304
FM25L256
FM25L256B)
FM25H20
FM25L04
AN-304
FM25040A
FM25256B
FM25C160
FM25CL64
FM25L16
FM25L256B
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FM25L
Abstract: TSMC 40nm TSMC Flash 40nm D945GCLF2 TPS65950 D945GCLF powerpc 7448 IMAPCAR2 LG electronic confidential tanner tools
Text: Ramtron Introduces FM25V10 1-megabit Serial F-RAM ~ EDA Geek Page 1 of 2 home : : contact : : embedded star : : fpga : : eda blog EDA Geek - electronic design automation, semiconductor, embedded system Ads by Google RAM Picture 08 RAM SRT free journals : : jobs
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FM25V10
com/2008/09/23/serial-parallel-spi-ram/
FM25L
TSMC 40nm
TSMC Flash 40nm
D945GCLF2
TPS65950
D945GCLF
powerpc 7448
IMAPCAR2
LG electronic confidential
tanner tools
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