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    FM16 Search Results

    FM16 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    BCR8FM-16LB#BH0 Renesas Electronics Corporation 800V - 8A - Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR8FM-16LB#BG0 Renesas Electronics Corporation 800V - 8A - Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR16FM-16LH#BG0 Renesas Electronics Corporation 800V - 16A - Triac Medium Power Use Visit Renesas Electronics Corporation
    BCR8FM-16LB#BB0 Renesas Electronics Corporation 800V - 8A - Triac Medium Power Use, TO-220FP, /Tube Visit Renesas Electronics Corporation
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    FM16 Price and Stock

    TDK Corporation TFM160808ALC-R47MTAA

    FIXED IND 470NH 2.7A 62 MOHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TFM160808ALC-R47MTAA Reel 27,000 3,000
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    Mouser Electronics TFM160808ALC-R47MTAA 3,138
    • 1 $0.35
    • 10 $0.268
    • 100 $0.206
    • 1000 $0.157
    • 10000 $0.139
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    Bristol Electronics TFM160808ALC-R47MTAA 1,500
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    TTI TFM160808ALC-R47MTAA Reel 3,000
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    • 10000 $0.121
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    TME TFM160808ALC-R47MTAA 3,000
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    Avnet Abacus TFM160808ALC-R47MTAA 19 Weeks 3,000
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    Chip1Stop TFM160808ALC-R47MTAA Cut Tape 1,098
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    • 10 $0.214
    • 100 $0.162
    • 1000 $0.138
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    Walsin Technology Corporation WLFM160808M1R0PP

    INDUCTOR FIXED 1.0UH 0603
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    DigiKey WLFM160808M1R0PP Cut Tape 7,428 1
    • 1 $0.1
    • 10 $0.053
    • 100 $0.0376
    • 1000 $0.0258
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    Rochester Electronics LLC FM1608B-SGTR

    FRAM MEMORY, 8KX8 PDSO28
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FM1608B-SGTR Bulk 5,000 45
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    • 100 $6.76
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    TDK Corporation TFM160810ALTA33NNTAA

    IND 33NH 10.0A 9.0MOHM -40~125
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TFM160810ALTA33NNTAA Reel 3,000 3,000
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    TFM160810ALTA33NNTAA Cut Tape 480 1
    • 1 $0.36
    • 10 $0.309
    • 100 $0.2292
    • 1000 $0.1648
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    Mouser Electronics TFM160810ALTA33NNTAA 5,650
    • 1 $0.36
    • 10 $0.303
    • 100 $0.225
    • 1000 $0.174
    • 10000 $0.146
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    Newark TFM160810ALTA33NNTAA Cut Tape 2,975 5
    • 1 $0.353
    • 10 $0.297
    • 100 $0.221
    • 1000 $0.221
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    ECS International Inc ECS-8FM-160-TR

    XTAL OSC XO 16.0000MHZ CMOS TTL
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    DigiKey ECS-8FM-160-TR Cut Tape 544 1
    • 1 $1.95
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    FM16 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FM160 Formosa Silicon epitaxial planer type Original PDF
    FM160 Rectron Semiconductor SMD, Schottky barrier diode, 60V, 1A, Silicon Diode Original PDF
    FM1601-7R Melcher 50 W DC-DC (AC-DC) Converter Original PDF
    FM1601-7R Power-One DC DC Converters, Power Supplies - External/Internal (Off-Board), DC/DC CONVERT 24V 2A Original PDF
    FM1601-7R Power-One 50 Watt DC-DC Converters Original PDF
    FM1601-9RG Bel Power Solutions Power Supplies - External/Internal (Off-Board) - DC DC Converters - DC/DC CONVERTER 24V 48W Original PDF
    FM1605-7R Bel Power Solutions Power Supplies - External/Internal (Off-Board) - DC DC Converters - DC/DC CONVERTER Original PDF
    FM1608 Unknown Original PDF
    FM1608 Ramtron International 64Kb Bytewide FRAM Memory Original PDF
    FM1608 Ramtron International 64Kb Bytewide FRAM Memory Original PDF
    FM1608 STMicroelectronics High Efficiency Fast Recovery Rectifier Diodes Scan PDF
    FM1608-120 Unknown Original PDF
    FM1608-120-P Ramtron International NVRAM, FRAM, Parallel, 5V Supply Voltage, 28-DIP Original PDF
    FM1608-120-P Ramtron International 64Kb Bytewide FRAM Memory Original PDF
    FM1608-120-P Ramtron International 64Kb Bytewide FRAM Memory Original PDF
    FM1608-120-P Ramtron International 64Kb Bytewide FRAM Memory Scan PDF
    FM1608-120-P Ramtron International 64Kb Bytewide FRAM Memory Scan PDF
    FM1608-120-S Ramtron International 64Kb Bytewide FRAM Memory Original PDF
    FM1608-120-S Ramtron International 64Kb Bytewide FRAM Memory Original PDF
    FM1608-120-S Ramtron International 64Kb Bytewide FRAM Memory Scan PDF

    FM16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FM1608B 64-Kbit 8 K x 8 Bytewide F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and


    Original
    PDF FM1608B 64-Kbit 64-Kbit 151-year 70-ns 130-ns

    FM16W08

    Abstract: No abstract text available
    Text: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    PDF FM16W08 64Kbit FM16W08, 00002G FM16W08-SG A103700002G FM16W08

    KS0070B

    Abstract: FM162A
    Text: Tovics Technology Corporation Standard Character LCD Module Feature 1. 2. 3. 4. 5. 6. FM162A Picture Information Display Format 16 x 2 8-Bit parallel bus interface Built-in LCD controller Wide operating temperature range ( Option ) High contrast ratio and wide viewing angle


    Original
    PDF FM162A KS0070B FM162A

    Fenghua

    Abstract: vr-10k FM162B KS0070B LCD Character Controller
    Text: Tovics Technology Corporation Standard Character LCD Module Feature 1. 2. 3. 4. 5. 6. FM162B Picture Information Display Format 16 x 2 8-Bit parallel bus interface Built-in LCD controller Wide operating temperature range ( Option ) High contrast ratio and wide viewing angle


    Original
    PDF FM162B Fenghua vr-10k FM162B KS0070B LCD Character Controller

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original
    PDF FM16W08 64Kbit FM16W08 64-kilobit FM16W08, 00002G FM16W08-SG A103700002G

    FM150L

    Abstract: FM160L SS15 SS16 DIODE marking code SS15
    Text: Formosa MS Chip Schottky Barrier Diodes FM150L THRU FM160L Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.185 4.8 0.173(4.4) 0.012(0.3) Typ.


    Original
    PDF FM150L FM160L MIL-S-19500 DO-214AC MIL-STD-750, 300us FM160L SS15 SS16 DIODE marking code SS15

    "Ferroelectric RAM"

    Abstract: FM1608S ferroelectric ram RAMTRON
    Text: FM1608S FRAM Memory 65,536-Bit Nonvolatile Ferroelectric RAM Product Specification Features 65,536 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 8,192 x 8 • CMOS Technology with Integrated Ferroelectric Storage Cells ■ Fully Synchronous Operation


    Original
    PDF FM1608S 536-Bit 180ns 320ns 28-Pin) 1608S "Ferroelectric RAM" ferroelectric ram RAMTRON

    FM1608B-SG

    Abstract: AEC-Q100-002 MS-013 FM1608B
    Text: Preliminary FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention (@ +75°C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    PDF FM1608B 64Kbit FM1608B 64-kilobit MS-013 FM1608B, 00002G FM1608B-SG A103700002G FM1608B-SG AEC-Q100-002

    FM1608

    Abstract: FM1608-120-PG MS-013 FM1608-120-S
    Text: FM1608 64Kb Bytewide F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    PDF FM1608 28-pin FM1608-120-PG M071170085G FM1608 FM1608-120-PG MS-013 FM1608-120-S

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention (@ +75 C) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original
    PDF FM1608B 64Kbit 28-pin

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 year Data Retention (@ +75C) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original
    PDF FM16W08 64Kbit

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Chip Schottky Barrier Diodes FM120-N THRU FM160-N Silicon epitaxial planer type Features SOD-323 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.106 2.7 0.091 (2.3)


    Original
    PDF FM120-N FM160-N OD-323 MIL-S-19500 MIL-STD-750, 300us

    FM161A

    Abstract: KS0066 LCD Character Controller
    Text: Tovics Technology Corporation Standard Character LCD Module Feature FM161A Picture Information 1. 2. 3. 4. Display Format 16 x 1 8-Bit parallel bus interface Built-in LCD controller Wide operating temperature range ( Option ) 5. High contrast ratio and wide viewing angle


    Original
    PDF FM161A FM161A KS0066 LCD Character Controller

    Untitled

    Abstract: No abstract text available
    Text: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    PDF FM1608 MS-011

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original
    PDF FM1608B 64Kbit 28-pin FM1608B, 00002G FM1608B-SG A103700002G

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • NoDelay write • Advanced high-reliability ferroelectric process


    Original
    PDF FM1608 28-pin MS-011 MS-011

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM1608B 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention (@ +75C)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original
    PDF FM1608B 64Kbit FM1608B 64-kilobit FM1608B, 00002G FM1608B-SG A103700002G

    FM16W08

    Abstract: FM16W08-SG AEC-Q100-002 MS-013
    Text: Preliminary FM16W08 64Kb Wide Voltage Bytewide F-RAM Features 64Kbit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 year Data Retention (@ +75C) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    PDF FM16W08 64Kbit FM16W08 64-kilobit 28-pin MS-013 FM16W08, 00002G FM16W08-SG FM16W08-SG AEC-Q100-002

    Untitled

    Abstract: No abstract text available
    Text: FM120 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION FM160 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere FEATURES * * * * * * Low switching noise Low forward voltage drop High current capability High switching capability


    Original
    PDF FM120 FM160 DO-214AC MIL-STD-202E

    FM1608

    Abstract: FM1608-120-P FM1608-120-S MS-011 MS-013
    Text: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


    Original
    PDF FM1608 FM1608 64-kilobit MS-011 FM1608-120-P FM1608-120-S MS-011 MS-013

    FM1608-120-SG

    Abstract: fm1608-120-pg FM1608 MS-013 M071 FM1608-120SG fm1608-120pg
    Text: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original
    PDF FM1608 28-pin 70085G FM1608-120-PG M071170085G FM1608-120-SG fm1608-120-pg FM1608 MS-013 M071 FM1608-120SG fm1608-120pg

    FM1608B-PG

    Abstract: No abstract text available
    Text: FM1608B PDIP 64Kb Bytewide 5V F-RAM Memory Features 64Kbit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits High Endurance 1 Trillion (1012) Read/Writes 38 year Data Retention @ +75 C NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original
    PDF FM1608B 64Kbit 28-pin FM1608B 64-kilobit FM1608B-PG

    FM1608

    Abstract: FM1608-120-P FM1608-120-S
    Text: FM1608 R aM TR O N 64Kb Bytewide F RAM Memory Features SRAM & EEPROM Compatible 64K bit Ferroelectric Nonvolatile RAM • • Organized as 8,192 x 8 bits • High endurance 10 Billion 10 10 read/writes • 10 year data retention at 85° C • NoDelay write


    OCR Scan
    PDF FM1608 FM1608 FM1608-120-P FM1608-120-S

    ram DS1225

    Abstract: DS1225 related circuit of 74HC138 74HC138 FR-H1
    Text: Replacing A Dallas Semiconductor DS1225 With FRAM Memory F ^ 3 M T R O f \J iia u s ! 'in \ » ‘n il active and onK K Op\ w h c i ; standby n o d e I n' small ba tte n -p o w e re d systems. this difference can R am tron's FM1608S 8 k xX ferroelei i a r.ii'dum .:i, css T e n io n


    OCR Scan
    PDF FM1608S DS1225 80C51 74HC138 74HC32 FM1608S 74HC373 ram DS1225 related circuit of 74HC138 FR-H1