Untitled
Abstract: No abstract text available
Text: MUR1040F 超快恢复整流二极管 Ultra-Fast Recovery Rectifier Diodes •特征 Features ■外形尺寸和印记 Outline Dimensions and Mark Io 10.0A ● VRRM 400V ● 玻璃钝化芯片 Glass passivated chip ● ● ITO-220AC .112 2.85 .100(2.55) .161(4.1)
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MUR1040F
ITO-220AC
22-Sep-11
21yangjie
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Untitled
Abstract: No abstract text available
Text: GF1640LAF 肖特基二极管 Schottky Diodes •特征 ■外形尺寸和印记 Features ITO-220AC 耐正向浪涌能力高 High surge Forward current capability 低功耗，大电流 ● Low Power loss, High efficiency ● IF（AV）16A 40V ● VRRM ● .185 4.7
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GF1640LAF
ITO-220AC
22-Sep-11
21yangjie
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Untitled
Abstract: No abstract text available
Text: GF1640LAF 肖特基二极管 Schottky Diodes •特征 ■外形尺寸和印记 Features ITO-220AC 耐正向浪涌能力高 High surge Forward current capability 低功耗，大电流 ● Low Power loss, High efficiency ● IF（AV）16A 40V ● VRRM ● .185 4.7
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GF1640LAF
ITO-220AC
22-Sep-11
21yangjie
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PDF
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Untitled
Abstract: No abstract text available
Text: MUR1010FCT THRU MUR1060FCT 超快恢复整流二极管 Ultra-Fast Recovery Rectifier Diodes •特征 ■外形尺寸和印记 Outline Dimensions and Mark Features Io 10.0A ● VRRM 100V~600V ● 玻璃钝化芯片 Glass passivated chip ITO-220AB ● ● 耐正向浪涌电流能力高
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MUR1010FCT
MUR1060FCT
ITO-220AB
MUR1010FCT-MUR1020FCT
MUR1040FCT
22-Sep-11
21yangjie
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PDF
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Untitled
Abstract: No abstract text available
Text: MUR1610FCT THRU MUR1660FCT 超快恢复整流二极管 Ultra-Fast Recovery Rectifier Diodes •特征 ■外形尺寸和印记 Outline Dimensions and Mark Features Io 16.0A ● VRRM 100V~600V ● 玻璃钝化芯片 Glass passivated chip ITO-220AB ● ● .134 3.4
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Original
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MUR1610FCT
MUR1660FCT
ITO-220AB
MUR1610FCT-MUR1620FCT
MUR1640FCT
22-Sep-11
21yangjie
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PDF
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Untitled
Abstract: No abstract text available
Text: MUR810F THRU MUR860F 超快恢复整流二极管 Ultra-Fast Recovery Rectifier Diodes •特征 ■外形尺寸和印记 Outline Dimensions and Mark Features Io 8.0A ● VRRM 100V~600V ● 玻璃钝化芯片 Glass passivated chip ● ● ITO-220AC 耐正向浪涌电流能力高
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MUR810F
MUR860F
ITO-220AC
MUR810F-MUR820F
MUR840F
22-Sep-11
21yangjie
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PDF
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ZENER DIODE z91
Abstract: ZNR 10K 271 TRANSISTOR REPLACEMENT ECG triac cf 406 panasonic ZNR MOV TRANSISTOR REPLACEMENT ECG 130 X2 MKP SH mr 504 diode SN2 357 hv9931 LED driver
Text: Supertex inc. HV9931DB1v2 LED Driver Demo Board Input 120VAC // Output 350mA, 40V 14W General Description The HV9931 LED driver is primarily targeted at low to medium power LED lighting applications where galvanic isolation of the LED string is not an essential requirement.
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HV9931DB1v2
120VAC
350mA,
HV9931
ZENER DIODE z91
ZNR 10K 271
TRANSISTOR REPLACEMENT ECG
triac cf 406
panasonic ZNR MOV
TRANSISTOR REPLACEMENT ECG 130
X2 MKP SH
mr 504 diode
SN2 357
hv9931 LED driver
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PDF
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SN2 357
Abstract: triac cf 406 ZNR 10K 271 TRANSISTOR REPLACEMENT ECG ERJ-6ENF1001V HV9931 ZENER DIODE z91 Vishay Q81 Heatsink-TO220 transistor pnp ecg 180
Text: Supertex inc. HV9931DB2v1 LED Driver Demo Board Input 230VAC // Output 350mA, 40V 14W General Description The HV9931 LED driver is primarily targeted at low to medium power LED lighting applications where galvanic isolation of the LED string is not an essential requirement.
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Original
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HV9931DB2v1
230VAC
350mA,
HV9931
SN2 357
triac cf 406
ZNR 10K 271
TRANSISTOR REPLACEMENT ECG
ERJ-6ENF1001V
ZENER DIODE z91
Vishay Q81
Heatsink-TO220
transistor pnp ecg 180
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PDF
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ifr 4000
Abstract: marker beacon receiver 6041-5680-800 1002-5600-4C0 Types of Radar Antenna ion lithium battery ev Beacon ELT 406 ES 5106 V ED62 diode 1002-5600-8P0
Text: NAV/COMM Test Set IFR 4000 Operation Manual Issue-2 EXPORT CONTROL WARNING: This document contains controlled technology or technical data under the jurisdiction of the Export Administration Regulations EAR , 15 CFR 730-774. It cannot be transferred to any foreign third party without the specific prior approval of the U.S. Department
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Untitled
Abstract: No abstract text available
Text: E L E C T R O N I C MBR40B100FCTH Power Schottky Rectifier - 40Amp 100Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity
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MBR40B100FCTH
40Amp
100Volt
ITO-220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: E L E C T R O N I C MBR40100FCT Power Schottky Rectifier - 40Amp 100Volt □ Features -Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity
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MBR40100FCT
40Amp
100Volt
ITO-220AB
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PDF
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semikron skiip 832
Abstract: lace sensor SKIIP832GB skiip 832 gb 120 MQ 9 sensor
Text: SEMIKRON SKiiP 832 GB 120 - 406 CTV Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 1200 V IGBT & Inverse Diode V cES SKiiPPACK SK integrated intelligent Power PACK halfbridge SKiiP 832 GB 120 + Driver 406 CTV 713 V c c 9> O perating DC link voltage
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arketin\datenbl\skiippac\sensor\d832gb
semikron skiip 832
lace sensor
SKIIP832GB
skiip 832 gb 120
MQ 9 sensor
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PDF
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RBV-404
Abstract: RBV-40C trr-50 RBV-401 rbv-406m RBV-402 RBV-406 RBV-406H RBV-408 406h
Text: Bridge Diodes Electrical Characteristics Ta— 25°C Absolute Maximum Ratings Parameter Tstg CC) Ifs m Vrm (V) Type No. RBV-401 100 RBV-402 200 RBV-404 400 RBV-406 600 RBV-408 800 RBV-40C 1000 I f ( av )(A ) With Heatsink (A) rc ) 50H z Hatf-cyde Sinewave
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RBV-401
RBV-402
RBV-404
RBV-406
RBV-408
RBV-40C
RBV-406M
RBV-406H
RBV-406H
RBV-401,
RBV-404
RBV-40C
trr-50
RBV-401
rbv-406m
RBV-402
RBV-406
RBV-408
406h
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PDF
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m10z10
Abstract: No abstract text available
Text: 5-1. Rectifier Diodes •Surface Mount Type Ta=25°C Absolute Maximum Ratings Type No. Vrm Iw fl IFSM (V) (A) (A) Tj : Contutori (Vi max ; i/i A) (A) max 30 Type No. Vrm Hm Im i (V) ÍA) (A) Electrical Characteristics Vf Donation Tstg (V) ft) RM 4 Y 100
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-406H
BV-601
-406M
m10z10
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PDF
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Untitled
Abstract: No abstract text available
Text: m DIOTEC ELECTRONICS CORP. Data Sheet No. SESA-401-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310)767-7958 1 4 AMP ULTRAFAST RECOVERY DIODES MECHANICAL SPECIFICATION FEATURES • Low sw itch ing noise • Low forw ard voltage drop
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SESA-401-1B
UFR400-
UFR410
DO-27
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PDF
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Untitled
Abstract: No abstract text available
Text: International I R Rectifier PD -5.067 PRELIMINARY GA150TD120U "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Ultra-Fast Speed IGBT Features V c e s = 1200V • Generation 4 IG B T technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kH z
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GA150TD120U
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PDF
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1X3 diode
Abstract: ucf 9a OCM142 OCM102 Photo MOS Relay CM103 OCM103 OCM112 OCM122 OCM123
Text: O K I electronic components OC 1 1X2, 1X3 SERIES Unidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM1X2 and OCM1X3 Series are unidirectional DC optical MOS relays, offering lower drive current than the OCM1XO / 1X1 Series. The input portion is a GaAs infrared light emitting diode. The
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10-mA
b724Z4D
L724240
1X3 diode
ucf 9a
OCM142
OCM102
Photo MOS Relay
CM103
OCM103
OCM112
OCM122
OCM123
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PDF
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1X3 diode
Abstract: 04ti
Text: O K I electronic components PC I 1X2, 1X3 SERIES Unidirectional Optical M O S Relay GENERAL DESCRIPTION The OCM1X2 and OCM1X3 Series are unidirectional DC optical MOS relays, offering lower drive current than the OCM1XO / 1X1 Series. The input portion is a Ga As infrared light emitting diode. The
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10-mA
b72424D
24E4G
L7E4240
1X3 diode
04ti
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PDF
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F10P100
Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04
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11EQS03L
11EQS02L
11EQ03
11EQ04
11EQ05
11EQ06
11EQ09
11EQ10
11EQS03
11EQS04
F10P100
10EF1
12MF30
diode f40c
60KQ10B
30MF40
F10KF20B
12MF40
C16P04Q
C25P40F
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PDF
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N4078
Abstract: 1N40 cg5002 ctm hs 740
Text: MICROSEMI CORP HSE D • bllSflbS OGOlGHfl 4 1N4057 thru 1N4085A MicrosemiCorp. SANTA ANA, CA 1 "7*// ¡5 SCOTTSDALE, A Z F or m ore inform ation call: 602 941-6300 FEATURES HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES « ZENER VOLTAGE 12.4V to 200V
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1N4057
1N4085A
GGT54
N4078
1N40
cg5002
ctm hs 740
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PDF
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CDA 10.7 MC 40
Abstract: dts circuit board BB112 equivalent variable coils toko s18 CDA 10.7 TEA5712T bb112 murata SFE 10.7 FM radio CIRcuit DIAGRAM TEA5712
Text: Philips Semiconductors Product specification AM/FM stereo DTS radio circuit TEA5712; TEA5712T • Designed for simple and reliable printed-circuit board layout FEATURES • Wide supply voltage range: 1.8 or 2.1 to 12 V • Low current consumption: 16 mA at AM, 17 mA at FM
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TEA5712;
TEA5712T
/TH0T76
711002b
CDA 10.7 MC 40
dts circuit board
BB112 equivalent
variable coils toko s18
CDA 10.7
TEA5712T
bb112
murata SFE 10.7
FM radio CIRcuit DIAGRAM
TEA5712
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PDF
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K4A 206
Abstract: zv43 tua4300 s0833 S08330 K43T k32 smd
Text: SIEMENS One-Chip Car Radio 1 Overview 1.1 Application TUA 4300 The TUA 4300 is a one-chip car radio system consist ing of AM/FM receiver, AM-up/down conversion, AGC amplifier/demodulator, FM-IF limiter amplifier/demodu lator and stereo Decoder/noise blanker.
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OCR Scan
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P-MQFP-64-1
EM-BIDICl64x
K4A 206
zv43
tua4300
s0833
S08330
K43T
k32 smd
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PDF
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TUA4300P
Abstract: siemens fl 232 v7 diode 107 detector 10.7 mhz 4300p IC FM detector with stereodecoder siemens c45
Text: SIEMENS One-Chip Car Radio 1 Overview 1.1 Application TUA 4300P The TUA 4300P is a one-chip car radio system consist ing of AM/FM receiver, AM-up/down conversion, AGC amplifier/demodulator, FM-IF limiter amplifier/demodu lator and stereo decoder/noiseblanker.
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4300P
4300P
P-LCC-68-1
TUA4300P
siemens fl 232 v7
diode 107
detector 10.7 mhz
IC FM detector with stereodecoder
siemens c45
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PDF
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TUA4300P
Abstract: No abstract text available
Text: SIEMENS One-Chip Car Radio 1 Overview 1.1 Application TUA 4300P The TUA 4300P is a one-chip car radio system consist ing of AM/FM receiver, AM-up/down conversion, AGC amplifier/demodulator, FM-IF limiter amplifier/demodu lator and stereo decoder/noiseblanker.
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4300P
4300P
535b05
fi23SbDS
P-LCC-68-1
12x45Â
TUA4300P
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PDF
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