FLW122

Abstract: ultrasonic flowmeter sensor JEMIS-032 ultrasonic flow meter FLW410 ultrasonic flowmeter flowmeter FLD22 RG58A/U flowmeter ultrasonics
Contextual Info: SERIES ULTRASONIC FLOWMETER < S Standard Type > FLV•··3, FLW···2, FLD···1 DATA SHEET This flowmeter is a clamp-on type ultrasonic flowmeter based on transit-time measuring method. Thanks to mi croprocessor based electronics, the flowmeter can be easily

Contextual Info: MADE IN USA WATER FLOWMETER AND CONTROLLER FLV-4600 Series $ 1430 Basic Unit ߜ Response Time of 20 milliseconds Typical Meter ߜ Turndown Ratio of 50:1 ߜ Push Button Tare (with Display) ߜ Accuracy of ±2% Full Scale ߜ NIST Traceability Optional ߜ Battery Pack for Portable Use

SSM6K07FU

Contextual Info: TOSHIBA SSM6K07FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6K07FU DC-DC CONVERTERS Unit in mm HIGH SPEED SWITCHING APPLICATIONS 2.1 ± 0.1 • Sm all Package R ^ U Il = is n — 1.25 i 0.1^ .O, m flv — n \fr^ c s = 1 A V. Ì . : Ron = 220 mO max. (@V g S = 4 v )

Contextual Info: MSD INC. ENGINEERING DATA SHEET RELAY TYPE: FCA-210-1025M ¡COMPUTER PART No.:9Z275S7 CUSTOMER/SPECIFICATION : tA8~353 fe/tO-OV5 M REVkJoKJE. COIL R E S .: ¿ 0% 3 2 0 OHN\S CONTACT MAKE BOUNCE: TEST PROCEDURE MSDP- T 9 O TEST REQUIREMENTS OPERATE TIME: 'O m S \Ab>A RELEASE TIME: \0«y>S M AX

kfn 332

Contextual Info: F J ifr s '- s m ACCEPT TERMINAL S IB NOTES 1. SnfcDJxUB 0 .5 fe^ o WARPING : 0 . 5 MAX. 2 .t — • i ' ^ h - N O . H NO." I CIR CUIT NO. : I ONLY. 4 4 .7 39 .6 0 9 - 5 0 - 1104 5196-102 36 .7 8 3 1 .6 8 - 1084 -082 -062 2 8 .8 6 2 3 .7 6 - 1064 2 0 .9 4

FLV100

Abstract: FLV102 FLV 102 FLV112 FLV117 FLV140 FLV150 V101 FLV101 FLV310
Contextual Info: 1-3 Section 1 Selection Guides LED Visible Lamps 1 Device No. Lens Characteristic FLV100 Red Point Source FI.V101 Red Diffused FLV102 Max Forward Current mA Typical Luminous Intensity mcd Typical Forward Voltage @ Ip = 20 mA V Data Sheet Page No. 50 0.5 @ 20 mA

MIL-C-26074C

Abstract: CCH.99.281.505 LEMO IEC-169-1-3 agh 003 Lemo 5K EPK.00.250.NTN LEMO FFA.00 EPL.00.250.NTN lemo LEMO 00 connectors
Contextual Info: ® Table of contents General Production 2 Main Characteristics and Types .2

thermistor 220

Abstract: Q63022 Q63022-K K220 k 220 thermistor 25 to 50 thermistor
Contextual Info: K 220 S 1/2.5 kQ Measuring therm istor The thermistor K 2 2 0 S 1 /2 .5 k fi is suitable for the solution of measuring problems at low electrical loads. The faces of the therm istor disc are lapped in a plane parallel w a y in order to ensure good therm al contact w hen m ounting the disc in a probe

3SK150

Abstract: v01s
Contextual Info: 2/ iJ D y N ? v * J L 7‘iL p J W - h M O S & 3SK150 m t í : am « ft 0c 8- 2O d B » * S F - 134B i J H • X * * ( T a = 2 & t ) a s K > • e •* 5 « * tsr VDB is V œ V018 ±8 V y — ► * • */ - * * ft tt 7020 y - ^ it ii ►l • V - * a «

Contextual Info: S E M I C O N D U C T O R tm 100314 Low Power Quint Differential Line Receiver General Description Features The 100314 is a monolithic quint differential line receiver with emitter-follower outputs. An internal reference supply VBB is available for single-ended reception. When used in

LT 8216

Contextual Info: General Production Programme Connectors Adaptors Unipole from 2 to 150 Amps Coaxial 50 and 75 £2 Coaxial 50 £2 NIM-CAMAC Coaxial 50 £2 for frequency up to 12 GHz Coaxial 50 £2 SMA Multicoaxial 50 and 75 £2 Multipole from 2 to 106 contacts High Voltage 3, 5, 8, 10, 15, 30, and 50 kV dc

Contextual Info: LEMO’s Miniature Coaxial Connectors NIM-CAMAC NBS-549 00 Series Connectors for Test & Measurement and Nuclear Applications 2004 Expect Success. Spec LEMO. A Global Leader Since its beginning in Switzerland in 1946, LEMO® has evolved into a worldwide

DS26C32ACN

Abstract: DS26C32ACM DS26C32AC DS26C32ACJ
Contextual Info: DS26C32AC/DS26C32AM National Semiconductor DS26C32AC/DS26C32AM Quad Differential Line Receiver General Description Features The DS26C32A is a quad differential line receiver designed to meet the RS-422, RS-423, and Federal Standards 1020 and 1030 for balanced and unbalanced digital data trans­

mbrf 10200

Abstract: 10150 CT mbrf 100 ct MBRF10200CT 20KH2 260TC MBRF1035CT
Contextual Info: E RoHS TAIWAN SEMICONDUCTOR MBRF1035CT - MBRF10200CT Isolated 10.0 A M PS . Schottky Barrier Rectifiers ITO-220AB C O M P L IA N C E Features « P&alte material w e d carries underwriters Laboratory Classifications 04V-C Meta I silicon junction. majority carrier conduction

Contextual Info: SUSCÔ ELECTRONICS INC 30E D 07010*10 OOODG7b 0 RESISTOR NETWORKS - SIP T -6 2 -0 5 INTRODUCTION î T H IC K F IL M RESISTOR NETW ORK HAVE M E T A L G LA ZE ELEM EN T ON THE CER­ A M IC SUBSTRATES W ITH STRONG CLIPC O N STRUCTION T E R M IN A L , A N D ARE

LS 7541

Abstract: F75-41/21 A 14U F75-34/14 F75-46/23 F75-54 7554
Contextual Info: F 75-34/14, F 75-41 /21, F 75-46/23, F 75-54/32 Negative temperature coefficient thermistor, heater-type Heater-type thermistors type F 75-34/14, -41 /2 1 , -46/23 and -54/32 lend themselves to the solution of regulation problems in electronic equipment and are also suitable

RC12F675

Contextual Info: Mic& PIC12F629/675 ihp 8-Pin F LASH-Based 8-Bit CM OS Microcontroller H igh P erfo rm a n c e R IS C C P U : Low P o w er Features • O n fy 3 5 irK T u :? o rK x> team • S*an<±/y C irro rr. A l ^ r r jf o c y d o ir e w a io r w eveep: b ra n c h « 1 n A % 2.ÛV. T fp c a i

Q63034-A1-M

Abstract: IS1020
Contextual Info: A 34-2/30, -4/20, -5/15, -6/40, -7/10, -10/25, -14/30, -25/18 Negative temperature coefficient thermistor, starting-type The thermistors A 314 are suitable for obtaining a defined current rise w ith time, particularly for delaying relays. The type A 3 4 -2 /3 0 is available in tw o models according to the tolerance of the

C466

Abstract: c468 BCW68 C463 C464 C465 C467 Q62702 BCW67DA BCW68DH
Contextual Info: BCW 67, BCW68 PNP Transistors for AF driver stages and switching applications BCW 67 and BCW 68 are epitaxial PNP silicon planar transistors in a plastic package 23 A 3 DIN 4 1 8 6 9 S O T -2 3 fo r AF driver stages and s w itc h in g as w e ll as universal

021B2

Abstract: transistor cbj hmv12 pnp germanium transistor 15bis AFY16 BA RV mesa
Contextual Info: Nicht für N eu entw icklun g PNP-Mesatransistor für HF-Anwendungen bis 900 MHz AFY16 A FY 16 ist ein PNP-Germanium-Transistor in Mesa-Techmk um Gehäuse 18 A 4 DIN 41 876 T O -72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor A FY 16 ist für

f11u

Abstract: 2sk1916 2SK1916-01R 1916-01R O41 DIODE a2267
Contextual Info: SK1916-01R FUJI PO W ER M O S-F ET N-CHANNEL SILICON POWER MOS-FET F - I I I Features S E R I E S Outline Drawings ►High speed switching ►Low on-resistance ►Mo secondary breakdown ►Low driving power ►High voltage 'V Ge; = ±30V Guarantee •Avalanche-proof

Contextual Info: 00 NIM-CAMAC & 01 COAXIAL CONNECTORS ® LEMO coaxial 00 and 01 Series 50 Ω Fundamental research in particle physics as practised within CERN and other nuclear research establishments requires more and more complex equipment of high performance in order to achieve the objectives. The needs of such research

Contextual Info: 00 NIM-CAMAC & 01 COAXIAL CONNECTORS ® LEMO coaxial 00 and 01 Series 50 Ω Fundamental research in particle physics as practised within CERN and other nuclear research establishments requires more and more complex equipment of high performance in order to achieve the objectives. The needs of such research

lemo

Abstract: NTCE24 DIN IEC 60093 LEMO 00 connectors LEMO epb 00 NTME31 FFA.00.250.NTAC29 RTA FFM 02 lemo CRIMP TOOL CHART NTCE44
Contextual Info: 00 NIM-CAMAC & 01 COAXIAL CONNECTORS ® LEMO coaxial 00 and 01 Series 50 Ω Fundamental research in particle physics as practised within CERN and other nuclear research establishments requires more and more complex equipment of high performance in order to achieve the objectives. The needs of such research