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    FLS MARKING CODE SOT23 Search Results

    FLS MARKING CODE SOT23 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    FLS MARKING CODE SOT23 Datasheets Context Search

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    FLs marking code SOT23

    Abstract: Q62702-F1066 Q62702-F977
    Text: PNP Silicon High-Voltage Transistors BFN 25 BFN 27 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 24, BFN 26 NPN ● Type Marking


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    PDF Q62702-F1066 Q62702-F977 OT-23 FLs marking code SOT23 Q62702-F1066 Q62702-F977

    FLs marking code SOT23

    Abstract: No abstract text available
    Text: BFN27 PNP Silicon High-Voltage Transistors 3 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage 2 • Complementary types: BFN24, BFN26 NPN 1 Type Marking BFN27


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    PDF BFN27 BFN24, BFN26 VPS05161 FLs marking code SOT23

    marking code 604 SOT23

    Abstract: NPN transistors sot-23 26 Q62702-F1065 Q62702-F1066 Q62702-F976 Q62702-F977 IC ua 74
    Text: NPN Silicon High-Voltage Transistors BFN 24 BFN 26 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 25, BFN 27 PNP ● Type Marking


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    PDF Q62702-F1065 Q62702-F976 OT-23 marking code 604 SOT23 NPN transistors sot-23 26 Q62702-F1065 Q62702-F1066 Q62702-F976 Q62702-F977 IC ua 74

    BFN26

    Abstract: BCW66 BFN27 BFN25
    Text: BFN27 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies 2 3 • High breakdown voltage 1 • Low collector-emitter saturation voltage • Complementary types: BFN26 NPN Type BFN27 Marking FLs


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    PDF BFN27 BFN26 BFN26 BCW66 BFN27 BFN25

    Untitled

    Abstract: No abstract text available
    Text: BFN27 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets 2 3 and switching power supplies 1 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN26 NPN • Pb-free (RoHS compliant) package


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    PDF BFN27 BFN26

    BCW66

    Abstract: BFN26 BFN27
    Text: BFN27 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets 2 3 and switching power supplies 1 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN26 NPN • Pb-free (RoHS compliant) package 1)


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    PDF BFN27 BFN26 BCW66 BFN26 BFN27

    isl 6251 schematic

    Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
    Text: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.


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    PDF Q62702-A772 Q62702-A731 Q62702-A773 OT-23 isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs

    BC848

    Abstract: BC847
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC857,


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    PDF BC857, Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 BC848 BC847

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 116 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7k£2, R2=47k£2 n TT Ordering Code Pin Configuration WGs Q62702-C2337 1= B Package 2=E o Marking BCR 116 II CO Type


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    PDF Q62702-C2337 OT-23

    Untitled

    Abstract: No abstract text available
    Text: bb53=J31 OOEMbQl IQS • APX N AflER P H ILIP S /D IS C R E T E BCX19 BCX20 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope, intended for application in thick and thin-film circuits. These transistors are intended fo r general purposes as well as saturated switching and driver applications


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    PDF BCX19 BCX20 OT-23 BCX17and BCX18 0D54b04

    marking code sot 23 8fn

    Abstract: marking code 8fn
    Text: SIEMENS PNP Silicon High-Voltage Transistors BFN 25 BFN 27 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 24, BFN 26 NPN Type


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    PDF Q62702-F1066 Q62702-F977 OT-23 EHP00629 EHP0062S marking code sot 23 8fn marking code 8fn

    42t sot-23

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon High-Voltage Transistors BFN 25 BFN 27 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low coliector-emitter saturation voltage • Complementary types: BFN 24, BFN 26 NPN Type


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    PDF Q62702-F1066 Q62702-F977 OT-23 fl235b05 42t sot-23

    BCW69

    Abstract: BCW70 IEC134 ScansUX40
    Text: ?110fl2fcj OQbflSH? 0^5 H P H I N BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A


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    PDF 711DflEb BCW69 BCW70 BCW70 711Qfi2fcj 7Z68040 IEC134 ScansUX40

    a7p marking

    Abstract: marking A7p sot23 a7p
    Text: BAV99 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV99 consists of tw o diodes in a m icrom iniature plastic envelope. The diodes are connected in series and the u n it is intended fo r high-speed switching in thick and th in -film circuits.


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    PDF BAV99 BAV99 243pF 510MO BAW62. a7p marking marking A7p sot23 a7p

    el 847

    Abstract: smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12
    Text: I I n t e r n a t io n a l Rec tifie r Case Outlines Bridges 140 0311} 110 0311) B1 (0.212) ¡Ö24Öj 113(0 ttO) 7 IIP » ) S.MfO.217) UO0.1M) 110(001* Case style D-70 B2 «400 Ml) I.W JIH 140(0 252) 0 30*012) 11.20(0441) • to (0.240) 3 W (P 1 2 2 ) I I— j


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    PDF t0Jtt04M) IR2130D MO-Q38AB el 847 smd schottky diode s4 85a Diode smd s6 85a marking CODE R SMD DIODE SMB J 36 CA fast recovery diode t3d 54 fast recovery diode t3d 67 IR2113 FULL BRIDGE smd diode code k34 smd diode schottky code marking SJ diode smd marking code M12

    78l03

    Abstract: S M R750 quartz fl 9014 smd 2SC 8550 3SK35 AT93C56SC 2SK2335 SMD CODE PACKAGE SOT25 st smd diode marking code VU THU 1203
    Text: CHIP SOLID TANTALUM CAPACITOR a. f r a * * 016 iW íD M fé R - 1 A,S m jz m m KE M E T/S PR A G E/N EC ta rn s * CA45 + HH*4SHt S S JIM V D C m % * ìi R5Bf L i W H 0.2 0.2 0.1 0.1 w. /v 6V : ov 16V POV ?f V 35V X4 ZZ'b 010 016 020 025 03b C J A C :• e


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    PDF 2000R 8500R M400R M3000R SSOP-B14 D661-4i8e7S8 78l03 S M R750 quartz fl 9014 smd 2SC 8550 3SK35 AT93C56SC 2SK2335 SMD CODE PACKAGE SOT25 st smd diode marking code VU THU 1203

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


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    PDF B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16

    ctc 880 transistor pins

    Abstract: 1F01B diagram remote control receiver and transmitter SC68C94 SC68C94A1A SC68C94A1N SC68C94C1A SC68C94C1N MOTOROLA DATE CODE transistor TXC 40MHz oscillator
    Text: INTEGRATED CIRCUITS SC68C94 Quad universal asynchronous receiver/ transmitter QUART Product specification IC19 1995 May 1 Philips Semiconductors PHILIPS PHILIPS T l l ü ô E b O G T O D Ô S fibfl Philips Semiconductors Product specification Quad universal asynchronous receiver/transmitter (QUART)


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    PDF SC68C94 l/02a-d SD00178 68C94 OT238-3 MO-047AD 711Dfl2t 001D12D ctc 880 transistor pins 1F01B diagram remote control receiver and transmitter SC68C94 SC68C94A1A SC68C94A1N SC68C94C1A SC68C94C1N MOTOROLA DATE CODE transistor TXC 40MHz oscillator

    dallas ds80c320 high speed micro guide

    Abstract: transistor bf 175 DS1640
    Text: TABLE OF CONTENTS Short-Form Catalog T im e kee pin g . 1 M emory P ro d u


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    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit