29f400 psop
Abstract: intel 28f200 amd 29f200 29F200 29F200 flash intel 28F400 datasheet 29f200 amd29f400 29F200 amd 29F400 code
Text: E AP-615 APPLICATION NOTE Accommodating Industry Trends in Boot Code Flash Memory COLLIN K. ONG TECHNICAL MARKETING ENGINEER DEBORAH SEE FLASH SOFTWARE ENGINEER April 1995 Order Number: 292169-001 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including
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AP-615
AMN32E40
29F0x0
32-PLCC
28F00xB
40-TSOP
AME32E40
32-TSOP
29f400 psop
intel 28f200
amd 29f200
29F200
29F200 flash
intel 28F400
datasheet 29f200
amd29f400
29F200 amd
29F400 code
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27SF256
Abstract: 29f100 27SF 29LV 28SF
Text: PROFESSIONAL PROGRAMMER SERIES The new Batronix Professional Programmer Series offers an exceptionally flexible, simple to use and extremely fast set of programming devices that support a broad range of chips including Eproms, EEproms, Flash, serial EEproms and other storage chips.
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AM29F040
BX32P
27SF256
29f100
27SF
29LV
28SF
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/14/2001
NOV/12/2001
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
single-pow003
PM0548
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
80ms--
80us--
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29F100T
Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
DEC/21/1999
JUN/14/2001
29F100T
1 MEGA OHM RESISTOR
MX29F100T
29f100
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
CompatiPM0548
DEC/21/1999
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/14/2001
NOV/12/2001
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Untitled
Abstract: No abstract text available
Text: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
80us--
100us
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Untitled
Abstract: No abstract text available
Text: INDEX ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • Sector protection - Hardware method to disable any combination of sectors from program or erase operations - Sector protect/unprotect for 5V only system or 5V/
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM0548
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MX29F100T
Abstract: No abstract text available
Text: INDEX ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 30mA maximum active current
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
FEB/04/1999
PM0548
MX29F100T
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29F100T
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz
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MX29F100T/B
128Kx8/64Kx16]
131072x8/
65536x16
55/70/90/120ns
16K-Bytex1,
32K-Bytex1,
64K-Byte
PM0548
29F100T
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29f800 29f400
Abstract: No abstract text available
Text: PA48TS29F Data Sheet 48 pin TSOP socket/44 pin DIP 0.6” plug Supported Device/Footprints Adapter Construction The PA48TS29F adapter converts the pinout of AMD flash memories in 48 pin TSOP packages to the 44 pin DIP equivalent. While these devices are not available in 44 pin DIP
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PA48TS29F
socket/44
29F100
29F200
29F400
29F800
29f800 29f400
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AM29F032B 04h
Abstract: 19945 AM29F010
Text: Am29Fxxx, 5.0 Volt-only Flash AMD* Device Bus Operations, Command Definitions, and Write Operations Status INTRODUCTION This section contains descriptions about the device bus operations, command definitions, and write operation status of the Am29Fxxx, 5.0 volt-only family of Flash
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Am29Fxxx
Am29F010A
Am29F100
AM29F032B 04h
19945
AM29F010
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M 29F100T M 29F100B 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME - 10p,s by Byte / 1 6p.s by Word typical
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29F100T
29F100B
x8/x16,
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M29F100
Abstract: M29F100B M29F100T
Text: w , SGS-THOMSON M 29F100T M 29F100B k7 #» RitlDÊlMIlilLIKËinSMQtÊS 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME
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M29F100T
M29F100B
x8/x16,
M29F100
M29F100B
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29f1001
Abstract: Am29f
Text: FINAL Am29F100T/Am29F1OOB 1 Megabit 131,072 x 8-Blt/65,536 x 16-Bit CMOS S.O Volt-only, Sector Erase Flash Memory AdvaM n££ Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements
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8-Blt/65
16-Bit)
44-pin
48-pin
150-C
Am29F100T/Am29F100B
Am29F100
29f1001
Am29f
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CS19AFDS
Abstract: No abstract text available
Text: SUPPLEMENT Am29F100 Known Good Die AMDH 1 Megabit 128 K x 8-Bit/64 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations
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Am29F100
8-Bit/64
16-Bit)
CS19AFDS
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29f100
Abstract: am29f100b Flash 29f100
Text: a ADVANCE INFORMATION Am29F100T/Am29F100B Advanced Micro Devices 1 Megabit 131,072 X 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — M inimizes system level power requirements
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Am29F100T/Am29F100B
8-Bit/65
16-Bit)
29F100T/Am29F100B
29F100
0-A15
DQ0-DQ15
16-bit
am29f100b
Flash 29f100
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Untitled
Abstract: No abstract text available
Text: F IN A L Am29F100T/Am29F100B AdvaM n££ 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ — M inimizes system level power requirements
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Am29F100T/Am29F100B
8-Bit/65
16-Bit)
48-pin
29F100T/Am29F100B
29F100
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29f1008
Abstract: 29f100
Text: FINAL AMDB Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Embedded Erase algorithm autom atically
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Am29F100
8-bit/64
16-bit)
29F100
29f1008
29f100
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Untitled
Abstract: No abstract text available
Text: AMD£I FINAL Am29F100T/Am29F1OOB 1 Megabit 131,072 x8-bit/65,536 x16-bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ ■ — Automatically programs and verifies data at
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Am29F100T/Am29F1OOB
x8-bit/65
x16-bit)
48-pin
Am29F100T/Am29F100B
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Untitled
Abstract: No abstract text available
Text: FINAL AMD£I Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Mem ory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Embedded Erase algorithm autom atically
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Am29F100
8-bit/64
16-bit)
20-year
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Untitled
Abstract: No abstract text available
Text: DRAFT AMDH A m 2 9 F 1 0 0 A 1 Megabit (128 K x 8-bit/64 K x 16-bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Sim plifies system-level power requirements ■ — Embedded Program algorithm automatically
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8-bit/64
16-bit)
29F100
5555h
Am29F100A
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