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    FLASH "HIGH TEMPERATURE DATA RETENTION" MECHANISM Search Results

    FLASH "HIGH TEMPERATURE DATA RETENTION" MECHANISM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation

    FLASH "HIGH TEMPERATURE DATA RETENTION" MECHANISM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    flash "high temperature data retention" mechanism

    Abstract: MSP430F4xx SLAA392 MSP430F1xx MSP430 11303-3 flash
    Text: Application Report SLAA392 – March 2008 Understanding MSP430 Flash Data Retention Kripasagar Venkat, Uwe Haensel MSP430 Applications ABSTRACT The MSP430 family of microcontrollers, as part of its broad portfolio, offers both read-only memory ROM -based and flash-based devices. Understanding the MSP430 flash is


    Original     		PDF SLAA392 MSP430 MSP430 flash "high temperature data retention" mechanism MSP430F4xx SLAA392 MSP430F1xx 11303-3 flash

    SLAA334A

    Abstract: MSP430F1xx MSP430F4xx MSP430 flash "high temperature data retention" mechanism
    Text: Application Report SLAA334A – September 2006 – Revised April 2008 MSP430 Flash Memory Characteristics Peter Forstner . MSP430 Applications ABSTRACT Flash memory is a widely used, reliable, and flexible nonvolatile memory to store


    Original     		PDF SLAA334A MSP430 MSP430F1xx, MSP430F2xx, MSP430F4xx SLAA334A MSP430F1xx MSP430F4xx flash "high temperature data retention" mechanism

    EIA/JEDEC JESD22-A110-B

    Abstract: JESD22-A117 JESD22 JESD22a117
    Text: Reliability Study AMD MirrorBit RELIABILITY STUDY White Paper OVERVIEW The MirrorBit™ cell is a breakthrough in NOR Flash memory cell architecture that enables a Flash memory product to hold twice as much data as standard Flash, without compromising device endurance, performance


    Original     		PDF 5M-11/02-0 6203A EIA/JEDEC JESD22-A110-B JESD22-A117 JESD22 JESD22a117

    38F1020W0YBQ0

    Abstract: 28F320W18 38F1020W0YTQ0 flash "high temperature data retention" mechanism
    Text: Intel Wireless Flash Memory W18 SCSP 32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ0, 38F1020W0YBQ0) Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each


    Original     		PDF 32-Mbit 38F1020W0YTQ0, 38F1020W0YBQ0) 32-KWord 38F1020W0YBQ0 38F1020W0YBQ0 28F320W18 38F1020W0YTQ0 flash "high temperature data retention" mechanism

    28F320W18

    Abstract: 32W18 38F1020W0YBQ0 38F1020W0YTQ0 252635
    Text: 32-Mbit 1.8 Volt Intel Wireless Flash Memory W18 + 8-Mbit SRAM StackedChip Scale Package 38F1020W0YTQ0, 38F1020W0YBQ0 Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each


    Original     		PDF 32-Mbit 38F1020W0YTQ0, 38F1020W0YBQ0 32-KWord 28F320W18 32W18 38F1020W0YBQ0 38F1020W0YTQ0 252635

    FLASH MEMORY 38F

    Abstract: 88-ball 28F320W18 38F1020W0YBQ0 38F1020W0YTQ0
    Text: Intel Wireless Flash Memory W18 SCSP 32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ0, 38F1020W0YBQ0) Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each


    Original     		PDF 32-Mbit 38F1020W0YTQ0, 38F1020W0YBQ0) 32-KWord FLASH MEMORY 38F 88-ball 28F320W18 38F1020W0YBQ0 38F1020W0YTQ0

    Intel SCSP

    Abstract: strataflash retention 252635 7900 Intel intel sram W18 Package
    Text: Intel Wireless Flash Memory W18 SCSP 32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ1, 38F1020W0YBQ1) Datasheet Product Features • Flash Architecture — Flexible, Multi-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — 8 Partitions, 4 Mbits each


    Original     		PDF 32-Mbit 38F1020W0YTQ1, 38F1020W0YBQ1) 32-KWord B5102-01 Intel SCSP strataflash retention 252635 7900 Intel intel sram W18 Package

    28F640w18t

    Abstract: flash "high temperature data retention" mechanism FLASH MEMORY 38F INTEL wireless FLASH MEMORY DATASHEETS 28F640W18 28F640W30 64WQ 251216 1.8V SRAM
    Text: Intel£ Wireless Flash Memory W18/W30 SCSP 64WQ Family Datasheet Product Features • ■ ■ Flash Architecture — Multiple-Partition, Dual-Operation: Read-While-Write / Read-While-Erase — Blocks: 32-Kword Main, 4-Kword Parameter — Top/Bottom Parameter - single flash die


    Original     		PDF W18/W30 32-Kword W18/W30 64W18 RD38F2020W0YTQ0 64W30 RD38F2020W0YBQ0 RD38F2020W0ZBQ0 RD38F2020W0ZTQ0 28F640w18t flash "high temperature data retention" mechanism FLASH MEMORY 38F INTEL wireless FLASH MEMORY DATASHEETS 28F640W18 28F640W30 64WQ 251216 1.8V SRAM

    C51 Microcontroller

    Abstract: 7144 transistor equivalent ATMEL 634 atmel lot marking flash "high temperature data retention" mechanism failure rate TDDB JESD22-A110 T89C51CC01 T89C51CC02
    Text: T89C51CC01 QualPack Qualification Package T89C51CC01 CAN / FLASH C51 Microcontroller T89C51CC01 CAN / FLASH C51 Microcontroller JANUARY 2002 Rev. 0 – 2002 January 1 T89C51CC01 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF T89C51CC01 T89C51CC01 C51 Microcontroller 7144 transistor equivalent ATMEL 634 atmel lot marking flash "high temperature data retention" mechanism failure rate TDDB JESD22-A110 T89C51CC02

    AT89C5131

    Abstract: JESD22-A118 T89C51CC01 T89C51AC2 JESD22-A101 Q100 T89C51AC2 TS16949 ATMEL package qualification
    Text: T89C51AC2 QualPack Qualification Package T89C51AC2 FLASH C51 Microcontroller with A/D Converter T89C51AC2 FLASH C51 Microcontroller OCTOBER 2003 Rev. 1– 2003 October 1 T89C51AC2 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF T89C51AC2 T89C51AC2 AT89C5131 JESD22-A118 T89C51CC01 T89C51AC2 JESD22-A101 Q100 TS16949 ATMEL package qualification

    AT89C51RD2 -um

    Abstract: AT89C51RD2 AT89C51E2 atmel package marking atmel at89c51ed2 AT89C51ED2 ATMEL 634 AT89C51ED2 UM AT89C5131 JESD22-A101
    Text: AT89C51RD2 / AT89C51ED2 QualPack Qualification Package AT89C51ED2 FLASH 8-bit C51 Microcontroller 64 Kbytes FLASH, 2 Kbytes EEPROM AT89C51RD2 / AT89C51ED2 JULY 2003 Rev. 0 – 2003 July 1 AT89C51RD2 / AT89C51ED2 QualPack 1 Table of contents 1 TABLE OF CONTENTS. 2


    Original     		PDF AT89C51RD2 AT89C51ED2 AT89C51ED2 AT89C51RD2 -um AT89C51E2 atmel package marking atmel at89c51ed2 ATMEL 634 AT89C51ED2 UM AT89C5131 JESD22-A101

    22A-104

    Abstract: No abstract text available
    Text: Cypress Semiconductor Product Reliability 1996 Published May, 1996 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM . 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF

    flash "high temperature data retention" mechanism

    Abstract: Angstrem Hebrew material science and technology 1117 FG 0.18-um CMOS Flash technology DSASW0037374
    Text: SuperFlash Memory Program/Erase Endurance Viktor Markov, Xian Liu, Alexander Kotov, Amitay Levi, Tho Ngoc Dang, and Yuri Tkachev Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, E-mail: akotov@sst.com Abstract––Program/erase endurance data for SuperFlash


    Original     		PDF 32Kbit flash "high temperature data retention" mechanism Angstrem Hebrew material science and technology 1117 FG 0.18-um CMOS Flash technology DSASW0037374

    251407

    Abstract: RD48F2000W
    Text: Intel£ Wireless Flash Memory W18/W30 SCSP 64WQ Family Datasheet Product Features • ■ ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter


    Original     		PDF W18/W30 64-Mbit 32-Mbit 16-Mbit 100figuration RD48F2000W0ZBQ0 RD38F2010W0YBQ0 RD38F2020W0YBQ0 RD38F2020W0ZBQ0 RD38F2030W0YBQ0 251407 RD48F2000W

    24XX256

    Abstract: DK-2750 PIC18LF4320
    Text: TB072 FLASH Memory Technology: Considerations for Application Design Author: Rodger Richey Microchip Technology Inc. INTRODUCTION Many times, choosing a FLASH memory device is driven by which manufacturer has the cheapest offering. Regardless of its use as a stand-alone device or as


    Original     		PDF TB072 DK-2750 D-85737 DS91072A-page 24XX256 PIC18LF4320

    ATMEL 634

    Abstract: AT355 AT89C51RB2 AT89C51RC2 PDIL40 T89C51IC2
    Text: AT89C51RB2 / RC2 & T89C51IC2 QualPack Qualification Package AT89C51RB2 / RC2 & T89C51IC2 FLASH C51 Microcontrollers AT89C51RB2 / RC2 & T89C51IC2 June 2002 Rev. 1 – 2002 June 1 AT89C51RB2 / RC2 & T89C51IC2 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF AT89C51RB2 T89C51IC2 T89C51IC2 ATMEL 634 AT355 AT89C51RC2 PDIL40

    Untitled

    Abstract: No abstract text available
    Text: Intel£ Wireless Flash Memory W18/W30 SCSP 64WQ Family Datasheet Product Features • ■ ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter


    Original     		PDF W18/W30 64-Mbit 32-Mbit 16-Mbit RD38F2030W0ZTQ0 64W30 RD38F2030W0ZBQ1 RD38F2030W0ZTQ1 64W18 RD38F2040W0YBQ0

    64W18

    Abstract: FLASH MEMORY 38F W18 88 FLASH MEMORY 48F 64WQ 251407 PF38F2030W0YTQE PF38F2030W0YTQ1
    Text: Intel Wireless Flash Memory W18/W30 SCSP 64WQ Family with Asynchronous RAM Datasheet Product Features • ■ ■ ■ ■ Device Architecture — Flash Density: 64-Mbit — Async PSRAM Density: 8-, 16-, 32-Mbit — Async SRAM Density: 4-, 8-, 16-Mbit — Top, Bottom or Dual flash parameter


    Original     		PDF W18/W30 64-Mbit 32-Mbit 16-Mbit RD38F2240WWYDQE 64W30 RD38F2240WWZDQ0 RD38F2240WWYDQ0 RD38F2240WWDQ1 64W18 FLASH MEMORY 38F W18 88 FLASH MEMORY 48F 64WQ 251407 PF38F2030W0YTQE PF38F2030W0YTQ1

    532WQ

    Abstract: PF38F1030W0YTQ2 38F1030 PF38F1030 PF38F2030W0YTQ1 pf38f1030w0ybq2 Intel SCSP 32WQ 64WQ RD38F2230
    Text: Numonyx Wireless Flash Memory W18/W30 SCSP 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 16-Mbit, 32-Mbit — Top, Bottom or Dual flash parameter


    Original     		PDF W18/W30 32-Mbit, 64-Mbit 16-Mbit, 32-Mbit RD38F2240WWYDQ0 RD38F2240WWYDQ1 532WQ PF38F1030W0YTQ2 38F1030 PF38F1030 PF38F2030W0YTQ1 pf38f1030w0ybq2 Intel SCSP 32WQ 64WQ RD38F2230

    MTBF calculation

    Abstract: AT89C5131 T89C51CC02 JESD22-A110 TSS463 JESD22-A101 JESD22-A118 Q100 TS16949 AT89C5114
    Text: T89C51CC02 QualPack Qualification Package T89C51CC02 CAN Networking with FLASH 8-bit C51 T89C51CC02 OCTOBER 2003 Rev. 1 – 2003 October 1 T89C51CC02 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF T89C51CC02 T89C51CC02 MTBF calculation AT89C5131 JESD22-A110 TSS463 JESD22-A101 JESD22-A118 Q100 TS16949 AT89C5114

    atmel lot marking

    Abstract: ATMEL 634 AT35500 transistor WL 431 atmel h 306 AT89C51SND1C JESD22-A110 Q100 flash "high temperature data retention" mechanism 0.35uM STI
    Text: AT89C51SND1C QualPack Qualification Package AT89C51SND1C FLASH C51 Microcontroller MP3 Decoder AT89C51SND1C SEPTEMBER 2002 Rev. 0 – 2002 September 1 AT89C51SND1C QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF AT89C51SND1C AT89C51SND1C atmel lot marking ATMEL 634 AT35500 transistor WL 431 atmel h 306 JESD22-A110 Q100 flash "high temperature data retention" mechanism 0.35uM STI

    thyristor bt 13

    Abstract: transistor A5 amplifier 5.1 surrounding system circuit diagram Picture-in-Picture IC thyristor battery charging HM53462 "tape reader" hid lamp controller 1Mbit x 4 Multiport DRAM thyristor control ic with current sense
    Text: Application Contents 1. Static RAM 2. Pseudo-Static RAM 3. Specific Memories for Graphic / Video Applications 4. Dynamic RAM 4-Mbit DRAM 5. Operation and Usage of SDRAM 6. EEPROM 7. FLASH MEMORY 8. EPROM/OTPROM 9. Mask ROM Programming Instruction 10. Instructions for Using Memory Devices


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    68HC908AZ60

    Abstract: flash "high temperature data retention" mechanism 8H62A DBG08 flash Activation Energy
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL INFORMATION 68HC908AZ60MSE4 Mask Set Errata 4 68HC908AZ60 8-Bit Microcontroller Unit INTRODUCTION This mask set errata provides information pertaining to the MSCAN module and the flash memory programming time applicable to this 68HC908AZ60 MCU mask set


    Original     		PDF 68HC908AZ60MSE4 68HC908AZ60 8H62A flash "high temperature data retention" mechanism 8H62A DBG08 flash Activation Energy

    hitachi eprom

    Abstract: transistor k512
    Text: Application 1. Flash Memory 1.1 Features and Application of Flash Memory Among a variety of large-capacity memory technologies, flash memory provides three major features, as illustrated in Figure 1-1. They are 1 lower power consumption and high reliability in tough


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