diode zener ZD 621
Abstract: BTS711L1 BTS 629 A bts712l1 712L1 MARKING CODE L13 BTS712N1 siemens 10e BTS712-N1 equivalent DIODE marking L14
Text: • flS35fc.0S OOfllVbO 4^7 ■ SIEMENS PROFET BTS712N1 Smart Four Channel Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection
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BTS712N1
P-DSO-20-9
Q670o0-S7001-A2
diode zener ZD 621
BTS711L1
BTS 629 A
bts712l1
712L1
MARKING CODE L13
BTS712N1
siemens 10e
BTS712-N1 equivalent
DIODE marking L14
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 16Mx 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time: 50 ns (-50 version)
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3164400J/T
3165400J/T
3164400J/T-50)
3164400J/T-60)
3165400J/T-50)
3165400J/T-60)
0235bD5
400J/T-50/-60
235b05
0Q71b5b
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LA 7612
Abstract: 4727 TLE SO CAY transistor sd 3 phase monitoring IC IED01769 IED01772 IED01780 IED01781 IED01782
Text: SIEMENS 2 -P hase S tepper-M o tor D river TLE 4727 Overview Bipolar 1C Features • 2 x 0.7 amp. outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Outputs free of crossover current
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Q67000-A9099
P-DIP-20-3
S235b05
01G3b2Q
25I20X
01Q3b21
LA 7612
4727
TLE SO
CAY transistor sd
3 phase monitoring IC
IED01769
IED01772
IED01780
IED01781
IED01782
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B32591C1104
Abstract: No abstract text available
Text: B 32 590 . B 32 594 Metallized Polyester Film Capacitors MKT Coated (Powder Dipped) Standard applications Construction • Dielectric: polyethylene terephthalate (polyester) • Stacked-film technology for lead spacing 7,5 . 15 mm (100 . 400 Vdc);
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A235b05
0D7MA33
Vdc/160
fl23SbOS
flS35fc
007HB35
Vdc/16
6S35bD
B32591C1104
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2,5GHz oscillator
Abstract: 3A-34 8GHz oscillator
Text: SIEM EN S LNA/Mixer PMB 2332 Bipolar IC Target Spezification Functional Description, Benefits: • New B6HF bipolar technology, 25GHz ft • Frequency range up to 3.0GHz • Small outline T-SSOP 16 package • 2.7-4.5V voltage supply • -40°C to +85°C operational temperature range
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25GHz
T-SSOP-16
235L05
T-SSOP-16
fl23ShDS
07fi2fcJcÃ
2,5GHz oscillator
3A-34
8GHz oscillator
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications * • High breakdown voltage Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration
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Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
OT-89
EHA07W
rps300
flS35fciGS
235bD5
D1HD43H
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Untitled
Abstract: No abstract text available
Text: BSP 129 Infineon technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 240 V ¡o 0.2 A ^DS on 20 £2 N channel Depletion mode High dynamic resistance Available grouped in VGS(ttl) Type Ordering Code Tape and Reel Information Pin Conf gura tion M arking
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Q67000-S073
OT-223
Q67000-S314
E7941
0235bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
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WY smd transistor
Abstract: No abstract text available
Text: fl235bD5 SIEMENS GG^^ßDÖ TÔT • PROFETO BTS 442 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short-circuit protection
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fl235bD5
O-22QAB/5
O-220AB/5,
E3043
Q67060-S6206-A2
E3043
Q67060-S6206-A3
O-22QAB/5,
E3062
BTS442E2
WY smd transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes BAS 125 . • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-D1316
Q62702-D1321
OT-23
EHM7002
EHA07005
Q62702-D1322
EHA0700*
Q62702-D1323
CHA07006
flS35fci05
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Untitled
Abstract: No abstract text available
Text: SPD 07N20 In fin e o n technologies Preliminary Data SIPMOS Power Transistor Product Summary Features Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated V 200 Drain source voltage • N channel ^ D S o n
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07N20
67040-S
112-A
S35bQ5
SQT-89
B535bQ5
D13377Ã
B235bG5
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Siemens Halbleiter
Abstract: No abstract text available
Text: SIEMENS ICs for Communications 1-Chip Car Radio TUA 4306 Specification 16.3.99 • I aS35bGS 0 1 3 7 ^ 535 ■ Edition 16.3.99 Published by Siem ens AG, Bereich Halbleiter, M arketingKom m unikation, Balanstraße 73, 81541 München Siem ens AG 1995. All Rights Reserved.
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aS35bGS
053SbDS
fiS35b05
fl235bG5
Siemens Halbleiter
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A1E transistor
Abstract: No abstract text available
Text: B S 107 Infineon tcehnologi*» SIPMOS * Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 •^GS th = 0.8.2.0V Pin 1 VPT05548 Pin 2 S Pin 3 G Type Vbs fe BDS(on) Package Marking BS 107 200 V 0.13 A 26 a tO -92 BS 107 Type BS 107
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Q67000-S078
E6288
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
A1E transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 16M x 64/72-Bit SDRAM Modules 3.3V 32M x 64/72-Bit SDRAM Modules 3.3V 64M x 64/72-Bit SDRAM Modules PC100-168 pin unbuffered DIMM Modules Target Information Preliminary Information HYS64/72V16200GU HYS64/72V32220GU HYS64/72V32200GU HYS64/72V64220GU
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64/72-Bit
PC100-168
HYS64/72V16200GU
HYS64/72V32220GU
HYS64/72V32200GU
HYS64/72V64220GU
V16200/3222
0/64220GU
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VQE 13E
Abstract: No abstract text available
Text: SIEMENS BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • ^G on.min = Ohm Type BSM150GB170DN2 E3166 h Vcz 1700V 220A Package
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BSM150GB170DN2
E3166
C67070-A2709-A67
0235b05
VQE 13E
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Untitled
Abstract: No abstract text available
Text: SIEMENS C166-Family of High-Performance CMOS 16-Bit Microcontrollers C 161R I Preliminary C161RI 16-Bit Microcontroller • High Perform ance 16-bit CPU with 4-Stage Pipeline • 125 ns Instruction Cycle Tim e at 16 MHz CPU Clock • 625 ns Multiplication 1 6 x 1 6 bits , 1.25 (xs Division ( 3 2 /1 6 bit)
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C166-Family
16-Bit
C161RI
535b05
S3047
P-TQFP-100-1
C1100x
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Mje 1532
Abstract: BFP194
Text: SIEMENS BFP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1347
OT-143
BFP194
0535tjQS
900MHz
23Sb05
Mje 1532
BFP194
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SmD TRANSISTOR a77
Abstract: smd marking code SSs
Text: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138
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BSS138
OT-23
Q67000-S566
Q67000-S216
E6327
E6433
fopu22
S35bQ5
Q133777
SQT-89
SmD TRANSISTOR a77
smd marking code SSs
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 32-Bit Dynamic RAM Module HYM 324020S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organization alternative 8 388 608 words by 16-bit • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time
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32-Bit
324020S/GS-50/-60
16-bit)
324020S/GS-50)
324020S/GS-60)
535bOS
32-Bit
623Sb05
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