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    Transistor BFR 97

    Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
    Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package


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    PDF fl23SbOS Q0QMb74 2N6619, 023SbOS 00G4b77 BFR35A 2N6619 Transistor BFR 97 Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79

    tca 335 A

    Abstract: tca 765 TCA335A
    Text: 47E ]> • fl23SbOS □□3L b4fl 5 ■ SIEG SIEMENS AKTIENGESELLSCHAF T -1 ^ - O lSingle Operational Amplifier with Darlington Input O TCA 332 TCA 335 Features • • • • • • • • • \ Bipolar 1C High input impedance Wide common-mode range Large supply-voltage range


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    PDF fl23SbOS Q67000-A2272 Q67000-A227Ã fl235b05 0034b5M TCA335 tca 335 A tca 765 TCA335A

    sab 8031a-p

    Abstract: 8031a microcontroller Siemens SAB 8031 sab 8031a SAB 8051A-P 8031a
    Text: SIEM EN S 47E D • fl23SbOS 0G2ÔÜ5Ô 0 I SI Ef i SIEMENS AKTIENGESELLSCHAF SAB 8051A/8031A Ext. Temp 8-Bit Single-Chip Microcontroller Extended Temperature Range: -4 0 *0 to +85°C -4 0 'C to +110*0 Mask-Programmable ROM SAB 8051A-12-P-T40/85 SAB 8051A-10-P-T40/110


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    PDF fl23SbOS 051A/8031A 051A-12-P-T40/85 051A-10-P-T40/110 031A-12-P-T40/85 031A-10-P-T40/110 -12-T40/85: -10-T40/110: 16-Bit fl235bQ5 sab 8031a-p 8031a microcontroller Siemens SAB 8031 sab 8031a SAB 8051A-P 8031a

    Untitled

    Abstract: No abstract text available
    Text: bOE J> • fl23Sfc.05 004L.2S3 L.Tb ■ S I E G SIEMENS LS T672-MO ORANGE LO T672-MO YELLOW LY T672-MO GREEN LG T672-MO PURE GREEN LP T672-LO SUPER-RED SIEMENS AKTIENGESELLSCHAF Super-TOP-LED , Surface Mount LED Lamp Package Dimensions in Inches mm 0 8 3 (2 1 }


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    PDF fl23Sfc T672-MO T672-LO T672-MO

    E3043

    Abstract: E3062A
    Text: fl23Sb05 0001337 4ñ0 S IE M E N S HITFET BTS 949 Smart Lowside Power Switch Features Product Summary • Logic Level Input Continious drain source • Input protection ESO On-state resistance • Thermal shutdown Current limitation • Overload protection


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    PDF 23SbDS 235bOS TQ220/5 Q67060-XX GPT0S165 T0220/5 E3043 TQ220/5 E3062A E3043

    transistor BD 430

    Abstract: 0436L
    Text: 2SC D • fl23Sb05 000435" 5 » S I E S - PNP Silicon Planar Transistor * BD 430 ', c r . 0 4 3 5 9 D SIEMENS AKTIEN6ESELLSCHAF T ~ .3 3 ~ / .Z - BO 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 2 0 2 . Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in


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    PDF fl23Sb05 0D043fal 0436L fl335b05 Q0043b2 transistor BD 430 0436L

    transistor s0014

    Abstract: S0014
    Text: SIEMENS AKTIENGESEL LSCH AF ISIEG fl23SbOS 00272flb b 47E D SFH 601G SERIES SIEM EN S PHOTOTRANSiSTOR OPTOCOUPLER -=^-6 3 Package Dimensions in Inches mm 1 343ÍB71 3»(BS) 138(3.5) 130(33) - Ï - (0 5) f Ita 142(36) 122(3 I) 1 E Œ E 11 H " ( 2 $4) Spaong


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    PDF fl23SbOS 00272flb CATH00E transistor s0014 S0014

    SAB 8051a p

    Abstract: intel 8051A SAB 8051 p SAB 81 C 50 P 8352-5-16-P-T3 SiEMENS EC 350 98 SIEMENS SAB 8051A-P
    Text: m fl23SbOS OOS'ISM'i 0 « S I E G 47E D SIEM EN S SIEMENS AKTIENGESELLSCHAF 7= V ?-/?-£> r 8-Bit Single Chip Microcontroller SAB 80513/80513-16 SAB 8352-5/8352-5-16 Preliminary Data SAB 80513/80513-16 SAB 8352-5/8352-5-16 • • • • • • • • •


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    PDF fl23SbOS Hz/16 16-bit D0S157S SAB80513/8352-5 2-12MHZ 12-16MHZ) CS00747 SAB 8051a p intel 8051A SAB 8051 p SAB 81 C 50 P 8352-5-16-P-T3 SiEMENS EC 350 98 SIEMENS SAB 8051A-P

    Untitled

    Abstract: No abstract text available
    Text: ESC D • fl23SbOS 000MS21 7 « S I E G NPN Silicon RF Transistor SIEMENS AKTIENGESELLSCHAF : l T '2 f - / 7 BF 562 , ° BF 562 is an NPN silicon RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.


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    PDF fl23SbOS 000MS21 62702-F542 82-02t"

    9 ELEMENT photoDIODE ARRAY

    Abstract: photodiode linear array
    Text: SIEMENS AKTIENGESELLSCHAF 47E D fl23Sb05 0 D 2 7 4 4 ‘Ì fi « S I E G SIEM ENS KOM 0622045 8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT ~ ~ p 4 i- 5 5 Outline Drawing Dimensions mm P C board Strip Chip •L Jki f LT^Lr 13.7 . 13.1 —I— 111 11j 11j 111


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    PDF fl23Sb05 125x2 9 ELEMENT photoDIODE ARRAY photodiode linear array

    d880

    Abstract: No abstract text available
    Text: öflD D • fl23SbGS 00150^0 G « S I E G 88D 15098 D T * mS f f î ' C b BUZ 383 SIEMENS AKTIEN6ESELLSCHAF Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-resistance Description Case voa h ^D S o n a 400V » 11,6 A = 0,5 Si


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    PDF fl23SbGS C67078-A3308-A2 23Sb05 fl23Sb05 d880

    THYRISTOR br 403

    Abstract: SIEMENS THYRISTOR thyristor 808 BR403
    Text: i 2SC D • fl23SbOS 0G047bl S Silicon Miniature Thyristor I SIEG BR403 3.5-11 SIEMENS AKTIEN6ESELLSCHAF Si BR 4 0 3 is a silicon planar thyristor in a plastic package silimar to TO 202. The thyristor is especially suitable for use in switching power supplies as well as for universal applications


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    PDF fl23SbOS 0G047bl BR403 62702-R THYRISTOR br 403 SIEMENS THYRISTOR thyristor 808 BR403

    74LS04C

    Abstract: gd5f 80515K m8ab
    Text: 47E D • fl23SfciüS D02ÔS7D fl ■ SIEG SIEMENS AKT IENGESELLSCHAF Xsrv SAB 80515K 8-Bit Single-Chip Microcontroller ROM-less Version • • • • • • • • • • • • • A dditional bus interface fo r external m em ory 256 x 8 RAM S ix 8-bit ports


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    PDF fl23Sfci 80515K 16-bit 53SbD5 SAB80515K 2-12MHZ 74LS04 i10pF 74LS04C gd5f m8ab

    MIL-D-87157

    Abstract: MSD2010 MSD2011 MSD2012 MIL-STD-750 2072 Appnote44 MIL-STD-883-method 2016
    Text: SIEMENS AKTIENGESELLSCHAF S IE M E N S 47E D fl23SbGS D02b'ltlfl 3 SIEG MSD2010TXV/TXVB YELLOW MSD2011TXV/TXVB h ig h e ff . r e d MSD2012TXV/TXVB HIGH EFF. GREEN MSD2013TXV/TXVB red .150" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display


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    PDF AE3Sb05 MSD2010TXV/TXVBT" MSD2011TXV/TXVB MSD2012TXV/TXVB MSD2013TXV/TXVB fiE35b05 GD27QQÃ -4I-37 -335mA 410mA MIL-D-87157 MSD2010 MSD2011 MSD2012 MIL-STD-750 2072 Appnote44 MIL-STD-883-method 2016

    5360-J

    Abstract: 5360-K lg diode C 5360 LYS360-H LG 42 t 5360-FJ 5360-DG 5360 5360E
    Text: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbQS 0DS7131 T m i l SIEM EN S re d SUPER-RED YELLOW GREEN LR LS LY LG 5360 5360 5360 5360 T 1 3/4 5 m m LED LAMP Package Dimensions mm A p p ro x w e ig h t 0 ,3 5 g FEATURES * High Light Output * Diffused Lens * Wide Viewing Angie 70°


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    PDF fl23SbOS T13/4 5360-DG 5360-GK 5360-E LYS360-H 5360-F 5360-HL 5360-FJ 5360-J 5360-K lg diode C 5360 LG 42 t 5360 5360E

    3004x

    Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
    Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


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    PDF fl23SbOS 0G04737 BFX55 Q60206-X55 fl235bOS 3004x Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79

    a1011

    Abstract: 3A21N BUZ25 C67078-A1011-A2 V103 T2030
    Text: ÔÔD » • fl23SbOS 0 0 1 M S 2 2 _ 4 * SIEG SIEMENS AK TI EN GES ELL SCH AF r ~ 3 f~ '/ Main ratings BUZ 25 N-Channel = 100 V Draln-source voltage l'os =» 19 A Continuous drain current h Draln-source on-resistance ^DS on a 0,1 a Description C ase Type


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    PDF 23sb0s BUZ25 C67078-A1011-A2 fi23Sfc fl23Sb05 a1011 3A21N BUZ25 C67078-A1011-A2 V103 T2030

    KDS 7c

    Abstract: A3116 DIODE S45 C67078-A3116-A2 156* diode
    Text: flêD D SIEMENS • fl23Sb05 0Q1SQ0& h M S I E G AKTIENGESELLSCHAF T ' ' 3 ^ ,* 7 3 Main ratings BUZ 348 N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case _ K>s h ^DS on = 50 V - 39 A = 0,04: SIPMOS, N-channel, enhancement mode


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    PDF fl23Sb05 C67078-A3116-A2 fl23St QQ15012 fl23SbOS KDS 7c A3116 DIODE S45 C67078-A3116-A2 156* diode

    BPX38

    Abstract: flux meter glass lens phototransistor
    Text: SIEMENS AKTIENGESELLSCHAF M7E D fl23SbOS GG57500 H « S I E G SIEMENS BPX38 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm Maximum Ratings Operating and Storage Temperature ( T ^ , T ^ . Soldering Temperature (distance from soldering joint to package ¿2 mm)


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    PDF BPX38 fi23SbOS D027501 flux meter glass lens phototransistor

    transistor BC 153

    Abstract: TRANSISTOR BC 141 BCY41 BC transistor series transistor BC SERIES TRANSISTOR BC140 transistor BC 310 bc 103 transistor transistor bc 103 transistor C719
    Text: ESC D • fl23SbQS 0004104 2 « S I E G . NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF


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    PDF 23SbQS 0Q04104 BC1401> Q60203-X140 Q60203-X140-V6 Q60203-X140-V10 Q60203-X140-V16 Q60203-X140-P 140/BC160 Q62702-C228-S2 transistor BC 153 TRANSISTOR BC 141 BCY41 BC transistor series transistor BC SERIES TRANSISTOR BC140 transistor BC 310 bc 103 transistor transistor bc 103 transistor C719

    LPD-80A

    Abstract: A950
    Text: SIEMENS AKTIENGESELLSCHAF i4?E » • fl23SbOS D D 2 7 S 0 A SIEMENS T «SIEG LPD-80A PHOTODARLINGTON M ¿3 Advance Data Sheet FEATURES Maximum Ratings • Silicon NPN Photodarlington • Miniature Side-Facing Package Collector Emitter Voltage Emitter Collector Voltage


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    PDF 023SbOS DD27S0Ã LPD-80A IRL-80A LPD-80A IRL-80A. A950

    photoresistor LDR 1000

    Abstract: Photoresistor photoresistor LDR Heimann LT2011 Heimann lt Diode LT 02 Siemens optocoupler IL ldr photocell Photocell LDR
    Text: S I EM EN S A K T I E N G E S E L L S C H A F 47E T> fl23Sb05 4 • SIEG ~ M Ì - S I Opto-couplers Heimann op to-coupler consist of a com bi­ nation of extremely high-intensity light em it­ ting diodes LED as emitters and specific photocell as detectors. Both elements are


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    PDF /002L LT2002 LT2001 LT2011 photoresistor LDR 1000 Photoresistor photoresistor LDR Heimann Heimann lt Diode LT 02 Siemens optocoupler IL ldr photocell Photocell LDR

    Untitled

    Abstract: No abstract text available
    Text: bGE D fl23Sb05 G04b54fi Tfll • S I E G SIEMENS SFH 2310 GE-AVALANCHE PHOTODIODE TO PACKAGE SIEMENS AKTIENGESELLSCHAF Preliminary Data Sheet Package Dimensions in mm C hip Location FEATURES Maximum Ratings * Sensitive Receiver for the 2 nd W indow 1300 nm


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    PDF fl23Sb05 G04b54fi

    Untitled

    Abstract: No abstract text available
    Text: bOE D fl23Sb05 SIEMENS OOSQbOÜ MMT H S I E ä S I E M EN S A K T I E N G E S E L L S C H A F Intelligent Double Low-Side Switch 2 x 0.5 A TLE 4214 Bipolar IC Features • Double low-side switch, 2 x 0.5 A • Power limitation • Overtemperature shutdown


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    PDF fl23Sb05 Q67000-A8183 Q67000-A9094 -DSO-20-l P-DSO-20-1 fl235bG5