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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 33V 4045 1 4 . 0 - 14.5GH z BAND 2W IN TERN ALLY MATCHED GaAs F E T DESCRIPTION The M G F K 3 3 V 4 0 4 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 14.0 ~ 14.5 GHz-band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF FK33V4045

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F K 3 3 V 40 45 1 4 .0 — 1 4 .5 G H z BAND 2 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION The M G F K 3 3 V 4 0 4 5 is an in te rn a lly impedance matched GaAs power FET especially designed fo r use in 14.0 ~ 14.5 GHz-band am plifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF FK33V4045