Film Microelectronics, Inc
Abstract: No abstract text available
Text: FMI Film Microelectronics Inc. 530 Turnpike Street, North Andover, MA 01845 Tele: 979.975.3385, FAX: 978.975.3506
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C-MAC MicroTechnology
Abstract: c-mac 1553 ltcc chip Book Microelectronic electrical engineering projects fuel level probe MEMS pressure sensor HP10 NR30 TS16949
Text: TOTALLY OBSESSED WITH MICROTECHNOLOGY HIGH RELIABILITY MICROELECTRONICS FOR HARSH ENVIRONMENTS Thick film / LTCC / Chip & Wire Multi-Chip Modules Hermetic packaging Specialist SMT Chip on Board COB Conformal coating www.cmac.com C-MAC MicroTechnology is dedicated to the design, manufacture
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B-9600
C-MAC MicroTechnology
c-mac 1553
ltcc chip
Book Microelectronic
electrical engineering projects
fuel level probe
MEMS pressure sensor
HP10
NR30
TS16949
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HMM4148
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. :Preliminary Data Issued Date : 1999.05.01 Revised Date : 1999.09.01 Page No. : 1/3 MICROELECTRONICS CORP. HMM4148 SURFACE MOUNT SWITCHING DIODES Description The HMM4148 is designed for high-speed switching application in hybrid thick-and thin-film
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HMM4148
HMM4148
f50Hz
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H1N4148
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 1999.05.01 Revised Date : 1999.09.01 Page No. : 1/3 MICROELECTRONICS CORP. H1N4148 HIGH-SPEED SWITCHING DIODES Description The H1N4148 is designed for high-speed switching application in hybrid thick and thin-film
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H1N4148
H1N4148
f50Hz
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HBAS16
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6833 Issued Date : 1994.05.27 Revised Date : 2002.10.24 Page No. : 1/3 HBAS16 HIGH-SPEED SWITCHING DIODE Description • The HBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.
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HE6833
HBAS16
HBAS16
OT-23
OT-23)
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HE6851
Abstract: HBC858
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6851 Issued Date : 1994.09.02 Revised Date : 2002.10.24 Page No. : 1/3 HBC858 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC858 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.
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HE6851
HBC858
HBC858
OT-23
HE6851
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transistor BC 336
Abstract: HBC558 HA2001
Text: HI-SINCERITY Spec. No. : HA200104 Issued Date : 2001.10.01 Revised Date : 2001.10.23 Page No. : 1/3 MICROELECTRONICS CORP. HBC558 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC558 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.
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HA200104
HBC558
HBC558
transistor BC 336
HA2001
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HBC548
Abstract: HA2001
Text: HI-SINCERITY Spec. No. : HA200103 Issued Date : 2001.10.01 Revised Date : 2001.10.23 Page No. : 1/3 MICROELECTRONICS CORP. HBC548 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC548 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.
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HA200103
HBC548
HBC548
HA2001
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MS-013 Package
Abstract: 2QSP24 MO-137 MS-013 cfb20q
Text: For technical assistance use the Microelectronics Products number on the back cover. Features • ■ ■ ■ Applications 8 T-filters with common ground Stable thin-film-on-silicon technology Ultra-miniature packages to JEDEC standards For package dimensions see page XX
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O-236.
MS-012.
2NBS14,
2NBS16
2NBS08
MS-013 Package
2QSP24
MO-137
MS-013
cfb20q
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HBC847
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6827 Issued Date : 1993.11.28 Revised Date : 2002.10.24 Page No. : 1/3 HBC847 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC847 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.
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HE6827
HBC847
HBC847
OT-23
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HBC856
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6832 Issued Date : 1994.02.03 Revised Date : 2002.10.24 Page No. : 1/3 MICROELECTRONICS CORP. HBC856 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC856 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.
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HE6832
HBC856
HBC856
OT-23
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HBC848
Abstract: hbc8
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6843 Issued Date : 1994.07.29 Revised Date : 2002.10.24 Page No. : 1/3 HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.
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HE6843
HBC848
HBC848
OT-23
hbc8
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HBC857
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6829 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC857 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC857 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.
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HE6829
HBC857
HBC857
OT-23
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HBC846
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6828 Issued Date : 1993.12.07 Revised Date : 2002.10.24 Page No. : 1/3 HBC846 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC846 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.
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HE6828
HBC846
HBC846
OT-23
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MS-013 Package
Abstract: CTA20Q 2QSP24 MO-137 MS-013 2TSP24
Text: For technical assistance use the Microelectronics Products number on the back cover. Features • ■ ■ ■ Applications 18 RC terminators tied to a common node Stable thin-film-on-silicon technology Ultra-miniature packages to JEDEC standards For package dimensions see page XX
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O-236.
MS-012.
2NBS14,
2NBS16
2NBS08
MS-013 Package
CTA20Q
2QSP24
MO-137
MS-013
2TSP24
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Untitled
Abstract: No abstract text available
Text: 38 HYBRID 12 GHz PLO • Small Size: 0.8 cubic inches and 2.3 ounces • Low Power Dissipation: 1.4 W • Low Phase Noise: - 105 dBc/Hz @ 10 kHz • Wide Operating Temperature: - 30 to + 85 °C This model is a thin-film, hybrid microelectronics Phase Locked Oscillator housed in a hermetically
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8508701ZA
Abstract: Film Microelectronics HERMETIC SMD
Text: DSCC DWG #8508701ZA FLH0041G/883 FLH0041G/883 0.2 Amp Linear Power Operational Amplifier In A Hermetic 12-Lead Package Product Data Sheet 0.2 AMP LINEAR POWER OPERATIONAL AMPLIFIER IN A HERMETIC 12-LEAD PACKAGE DESCRIPTION: Film Microelectronics has developed this Power Operational Amplifier for use in
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8508701ZA
FLH0041G/883
12-Lead
8508701ZA
Film Microelectronics
HERMETIC SMD
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HMBD914
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6538 Issued Date : 1997.01.18 Revised Date : 2002.10.25 Page No. : 1/3 HMBD914 HIGH-SPEED SWITCHING DIODE Description The HMBD914 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The device is manufactured by the silicon
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HE6538
HMBD914
HMBD914
OT-23
OT-23)
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HMBD4148
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6802 Issued Date : 1995.12.09 Revised Date : 2002.10.25 Page No. : 1/2 HMBD4148 HIGH-SPEED SWITCHING DIODE Description The HMBD4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon
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HE6802
HMBD4148
HMBD4148
OT-23
OT-23)
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8001401ZA
Abstract: "linear Buffer Amplifier" FLH0033G HERMETIC SMD
Text: DSCC DWG #8001401ZA FLH0033G/883 FLH0033G/883 Product Data Sheet Fast Linear Buffer Amplifier In A Hermetic 12-Lead Package FAST LINEAR BUFFER AMPLIFIER IN A HERMETIC 12-LEAD PACKAGE PIN CONNECTION Top View 6 DESCRIPTION: Film Microelectronics has developed this Fast Buffer Amplifier for use in applica-
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8001401ZA
FLH0033G/883
12-Lead
8001401ZA
"linear Buffer Amplifier"
FLH0033G
HERMETIC SMD
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Untitled
Abstract: No abstract text available
Text: AVNET INC/ FILM MELEC U D • USTfibO DDD0113 b ■ AVNT -¡rz</2~'8 FILM MICROELECTRONICS A DIVISION OF AVNET MICROTECHNOLOGIES INC. THICK FILM CAPABILITIES □ SCREEN MAKING With our in-house screen making equipment, we can produce the screens necessary for Thick Film processing. This allows us to provide a faster tur
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DDD0113
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Untitled
Abstract: No abstract text available
Text: THICK FILM PROCESS CAPABILITIES COMPANY PROFILE MINI-SYSTEMS, INC. WAS FOUNDED IN 1968 BY GLEN E. ROBERTSON. OUR PRIMARY GOAL IS TO MANUFACTURE PRECISION COMPONENTS FOR THE HYBRID AND MICROELECTRONICS INDUSTRY. MINI-SYSTEMS, INC. IS COMPRISED OF FOUR DIVISIONS:
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MIL-PRF-38534,
MIL-PRF-55342
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r2r 10k ladder network
Abstract: nbs16j r2r ladder 10 pin analog to digital r2r ladder 14 pin
Text: For technical assistance call the Microelectronics Products number on the back cover. Features Applications • R esistor ladder in 1:2 ratio ■ Stable th in -film -o n -silico n technology ■ Digital to analog converters ■ Successive ap proxim ation ADCs
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Untitled
Abstract: No abstract text available
Text: For technical assistance call the Microelectronics Products number on the back cover. Features Applications • Multiple SC SI termination resistors ■ Single-ended SC SI termination ■ Stable thin-film-on-silicon technology ■ SCSI host adaptor cards ■ Ultra-miniature packages to JED EC
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