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    FIELD MEASUREMENTS ON HIGH POWER PRESS PACK SEMICONDUCTORS Search Results

    FIELD MEASUREMENTS ON HIGH POWER PRESS PACK SEMICONDUCTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    FIELD MEASUREMENTS ON HIGH POWER PRESS PACK SEMICONDUCTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GTO hvdc thyristor

    Abstract: 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB
    Text: Phase Control and Bi-directionally Controlled Thyristors ABB Semiconductors The work-horse of power conversion Since its introduction almost 50 years ago, the Phase Control Thyristor has been the back-bone of the high power electronics industry. Its field of application ranges from kW DC-drives


    Original     		PDF 5SYA2006 5SYA2020 5SYA2034 5SYA2036 5SYA2048 5SYA2049 5SYA2051 5SZK9104 5SZK9105 CH-5600 GTO hvdc thyristor 5STP 57U4200 abb thyristors 5STP03D6500 6" thyristor for HVDC field controlled thyristor ABB Thyristor Field measurements on High Power Press Pack Semiconductors 5STP20N8500 GTO thyristor ABB

    thyristor Q 720

    Abstract: thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200
    Text: Phase Control and Bi-directionally Controlled Thyristors ABB Switzerland Ltd, Semiconductors The work-horse of power conversion remains vital and is ready to conquer new applications and setting new power records. Since its introduction in the 1960s, the phase control thyristor


    Original     		PDF 1960s, 5SYA2006 5SYA2020 5SYA2034 5SYA2036 5SYA2048 5SYA2049 5SYA2051 5SZK9104 5SZK9105 thyristor Q 720 thyristor N 600 ch 14 GTO hvdc thyristor 5STP03D6500 ABB thyristors abb phase control thyristors 13N65 field controlled thyristor 5stp 5STP25M5200

    bolt torque chart

    Abstract: DIODE RECTIFIER press fit torque settings chart for mm stainless bolts Bolt size equivalent torque data 3 phase rectifier scr controller
    Text: APPLIED POWER SYSTEMS, INC. Applied Power Systems, Inc. Precision Clamps and Heatsink Assemblies for High Power Semiconductors 124 Charlotte Avenue ● Hicksville, NY 11801 ● Ph: 516.935.2230 ● Fax: 516.935.2603 ● Website: www.appliedps.com APPLIED POWER


    Original     		PDF

    IGCT thyristor ABB

    Abstract: IGCT IGCT high high power igct abb abb thyristor control unit IGCT thyristor current max igct application
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 3800 28x103 1.7 0.457 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4511 Doc. No. 5SYA1234-02 June 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		PDF 35L4511 5SYA1234-02 CH-5600 IGCT thyristor ABB IGCT IGCT high high power igct abb abb thyristor control unit IGCT thyristor current max igct application

    IGCT thyristor ABB

    Abstract: high power igct abb IGCT thyristor current max igct application 35L4512
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-02 June 07 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and


    Original     		PDF 35L4512 5SYA1233-02 CH-5600 IGCT thyristor ABB high power igct abb IGCT thyristor current max igct application 35L4512

    Eupec Power Semiconductors PHASE CONTROL THYRISTORS

    Abstract: EUPEC DIODE
    Text: Power Capability and Reliability of High Power Semiconductors D. Westerholt, eupec GmbH + Co KG, Am Schloßberg 10, D-91362 Pretzfeld, Germany G. Schmidt, eupec GmbH + Co KG, Am Schloßberg 10, D-91362 Pretzfeld, Germany H.-J. Schulze, Siemens Corporate Technology, Otto-Hahn-Ring 6, D-81730 München


    Original     		PDF D-91362 D-81730 Eupec Power Semiconductors PHASE CONTROL THYRISTORS EUPEC DIODE

    ABB 163410

    Abstract: 5SHY 35L4510 igct application
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 Doc. No. 5SYA1232-03 May 08 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		PDF 35L4510 5SYA1232-03 CH-5600 ABB 163410 5SHY 35L4510 igct application

    IGCT

    Abstract: igct application
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-03 May 08 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and


    Original     		PDF 35L4512 5SYA1233-03 CH-5600 IGCT igct application

    5SYA1232-02

    Abstract: 35L4510 A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4510 Doc. No. 5SYA1232-02 June 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		PDF 35L4510 5SYA1232-02 CH-5600 35L4510 A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb

    A125

    Abstract: B125 C125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb high power igct abb igct application
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 3800 28x103 1.7 0.457 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4511 Doc. No. 5SYA1234-02 June 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz) and


    Original     		PDF 35L4511 5SYA1234-02 CH-5600 A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb high power igct abb igct application

    IGCT thyristor ABB

    Abstract: IGCT thyristor current max IGCT A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 igct abb
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 6500 4200 26x103 2.0 0.54 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6530 PRELIMINARY Doc. No. 5SYA1246-00 Aug. 07 • High snubberless turn-off rating • Wide temperature range


    Original     		PDF 42L6530 5SYA1246-00 CH-5600 IGCT thyristor ABB IGCT thyristor current max IGCT A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 igct abb

    IGCT thyristor ABB

    Abstract: igct abb 55L4500 IGCT A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 5500 33x103 1.3 0.26 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 55L4500 PRELIMINARY Doc. No. 5SYA1243-01 Aug 07 • High snubberless turn-off rating • Optimized for medium frequency (<1 kHz)


    Original     		PDF 55L4500 5SYA1243-01 CH-5600 IGCT thyristor ABB igct abb 55L4500 IGCT A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156

    A125

    Abstract: B125 C125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-02 June 07 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and


    Original     		PDF 35L4512 5SYA1233-02 CH-5600 A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 IGCT thyristor current max igct abb

    Untitled

    Abstract: No abstract text available
    Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 2800 5380 8450 65x103 0.77 0.082 Rectifier Diode V A A A V 5SDD 51L2800 mW Doc. No. 5SYA1103-02 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · High average and surge current.


    Original     		PDF 51L2800 5SYA1103-02 CH-5600

    igct 6500

    Abstract: IGCT thyristor ABB igct abb IGCT thyristor current max IGCT 5szk A125 B125 C125 HFBR-1528
    Text: VDRM ITGQM ITSM V T0 rT VDC-link = = = = = = 6500 4200 26x103 2.0 0.54 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6500 PRELIMINARY Doc. No. 5SYA1245-00 Aug 07 • High snubberless turn-off rating • Wide temperature range


    Original     		PDF 42L6500 5SYA1245-00 CH-5600 igct 6500 IGCT thyristor ABB igct abb IGCT thyristor current max IGCT 5szk A125 B125 C125 HFBR-1528

    Modified Coffin-Manson Equation Calculations

    Abstract: TN-00-18 TN0018 micron memory model for ddr3 TN-00-08 ddr3 MTBF 59559 Coffin-Manson Equation mobile ddr2 7994
    Text: TN-00-18: Temperature Uprating on Semiconductors Introduction Technical Note Uprating Semiconductors for High-Temperature Applications Introduction Uprating is used to evaluate a part’s ability to function and perform when it is used outside of the manufacturer’s specified temperature range.21 For example, the


    Original     		PDF TN-00-18: TN-00-08 09005aef81694133/Source: 09005aef8169415f TN0018 Modified Coffin-Manson Equation Calculations TN-00-18 micron memory model for ddr3 ddr3 MTBF 59559 Coffin-Manson Equation mobile ddr2 7994

    HFBR-2521Z

    Abstract: 6227-1 j-900 HFBR-1528Z
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4521 Doc. No. 5SYA1253-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency  High electromagnetic immunity


    Original     		PDF 35L4521 5SYA1253-00 CH-5600 HFBR-2521Z 6227-1 j-900 HFBR-1528Z

    Pressure transmitter TBD

    Abstract: HFBR1528Z A125 B125 HFBR-1528Z HFBR-2521Z MTA-156 IGCT thyristor current max igct abb IGCT 7000
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 5500 3600 26x103 1.93 0.536 3300 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 50L5500 PRELIMINARY Doc. No. 5SYA1244-03 Aug. 11 • High snubberless turn-off rating  Optimized for medium frequency (<1 kHz)


    Original     		PDF 50L5500 5SYA1244-03 CH-5600 Pressure transmitter TBD HFBR1528Z A125 B125 HFBR-1528Z HFBR-2521Z MTA-156 IGCT thyristor current max igct abb IGCT 7000

    35L4520

    Abstract: IGCT high voltage
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 32x103 1.4 0.325 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4520 Doc. No. 5SYA1248-00 Feb. 12 • High snubberless turn-off rating  Optimized for medium frequency  High electromagnetic immunity


    Original     		PDF 35L4520 5SYA1248-00 CH-5600 35L4520 IGCT high voltage

    35L4522

    Abstract: high power igct abb
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 4000 35x103 1.15 0.21 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4522 Doc. No. 5SYA1249-00 Feb.12 • High snubberless turn-off rating  Optimizedfor low frequency  High electromagnetic immunity


    Original     		PDF 35L4522 5SYA1249-00 CH-5600 35L4522 high power igct abb

    IGCT 7000

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 5500 33x103 1.15 0.30 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 55L4500 Doc. No. 5SYA1243-04 May 08 • High snubberless turn-off rating • Optimized for medium frequency • High electromagnetic immunity


    Original     		PDF 55L4500 5SYA1243-04 CH-5600 IGCT 7000

    high power igct abb

    Abstract: IGCT thyristor current max amp mta 156
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 6500 3800 26x103 1.88 0.56 4000 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 42L6500 Doc. No. 5SYA1245-03 June 10 • High snubberless turn-off rating • High electromagnetic immunity • Simple control interface with status feedback


    Original     		PDF 42L6500 5SYA1245-03 CH-5600 high power igct abb IGCT thyristor current max amp mta 156

    HFBR-1528Z

    Abstract: A125 B125 HFBR-2521Z MTA-156 IGCT thyristor current max igct abb 40L4511
    Text: VDRM ITGQM ITSM V T0 rT VDC = = = = = = 4500 3600 28x103 1.7 0.454 2800 V A A V m V Asymmetric Integrated GateCommutated Thyristor 5SHY 40L4511 Doc. No. 5SYA1252-00 March 11 • High snubberless turn-off rating  Optimized for medium frequency  High electromagnetic immunity


    Original     		PDF 40L4511 5SYA1252-00 CH-5600 HFBR-1528Z A125 B125 HFBR-2521Z MTA-156 IGCT thyristor current max igct abb 40L4511

    Untitled

    Abstract: No abstract text available
    Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V 5SDD 54N4000 mW Doc. No. 5SYA1171-01 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability


    Original     		PDF 54N4000 5SYA1171-01 CH-5600