Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYP Search Results

    FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TEST88

    Abstract: No abstract text available
    Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U-MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools


    Original
    TPC8A01 Qg17nC TEST88 PDF

    TPC8A01

    Abstract: No abstract text available
    Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U-MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools


    Original
    TPC8A01 Qg17nC TPC8A01 PDF

    TPC8A01

    Abstract: MARKING 3AB
    Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U-MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •


    Original
    TPC8A01 Qg17nC TPC8A01 MARKING 3AB PDF

    TPC8A01

    Abstract: No abstract text available
    Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U-MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U-MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •


    Original
    TPC8A01 Qg17nC TPC8A01 PDF

    3N128

    Abstract: No abstract text available
    Text: Order this document by 3N128/D MOTOROLA M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTOR N-CHANNEL MOS FIELD-EFFECT TRANSISTOR . . . designed for VHF amplifier and oscillator applications in com­ munications equipment.


    OCR Scan
    3N128/D_ 3N128 5000/imhos 3N128/D 3N128/D 3N128 PDF

    TPC8A01

    Abstract: MARKING J1A 4X25 pdii
    Text: T O S H IB A TPC8A01 01:TOSH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U—MOS DI 0 2:INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE( U - M O S M ) TENTATIVE TPC8A01 DC-DC CONVERTER NOTE BOOK PC PORTABLE MACHINES AND TOOLS


    OCR Scan
    TPC8A01 TPC8A01 MARKING J1A 4X25 pdii PDF

    3SK231

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)


    Original
    3SK231 3SK231 PDF

    NEC k 1760

    Abstract: UAA 146 3SK230 UAA 2001
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBµ (TYP.) @f = 470 MHz, GR = −30 dB


    Original
    3SK230 SC-61) NEC k 1760 UAA 146 3SK230 UAA 2001 PDF

    3SK134B

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain Gps = 23.0 dB TYP. @ = 900 MHz • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)


    OCR Scan
    3SK134B SC-61) 3SK134B PDF

    3SK230

    Abstract: U1A marking
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBm (TYP.) @f = 470 MHz, GR = -30 dB


    Original
    3SK230 SC-61) 3SK230 U1A marking PDF

    3SK231

    Abstract: No abstract text available
    Text: DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)


    Original
    3SK231 3SK231 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain G ps = 17.5 dB TYP. (@ = 900 MHz)


    OCR Scan
    3SK231 SC-61) PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz High Power Gain Gps PACKAGE DIMENSIONS (Unit: mm) = 17.5 dB TYP. (@ = 900 MHz)


    OCR Scan
    3SK231 SC-61) PDF

    TPCP8401

    Abstract: No abstract text available
    Text: TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSⅣ / N Channel U-MOSⅢ TPCP8401 2.9±0.1 0.3 +0.1/−0.05 0.025 M 8 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating P Channel N Channel 0.24+0.10 −0.09


    Original
    TPCP8401 TPCP8401 PDF

    2u55

    Abstract: 3SK134B
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES V Gate1 to Source Voltage VG1S ±8 Gate2 to Source Voltage VG2S ±8 ±10 *1 V Gate1 to Drain Voltage


    Original
    3SK134B SC-61) 2u55 3SK134B PDF

    3SK135A

    Abstract: of 8404
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters • Suitable for use as RF amplifier in UHF TV tuner. 4 1 –0.06 0.16 +0.1


    Original
    3SK135A 3SK135A of 8404 PDF

    3SK131

    Abstract: 3SK131-T2-A V12 P12449EJ2V0DS00 TC1508
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS Unit: mm FEATURES • Suitable for use as RF amplifier in VHF TV tuner. +0.2 Gate1 to Source Voltage


    Original
    3SK131 3SK131 3SK131-T2-A V12 P12449EJ2V0DS00 TC1508 PDF

    3SK245

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK245 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain G ps = 23.0 dB TYP. @ = 900 MHz • Low Noise Figure NF = 2.4 dB TYP. (@ = 900 MHz)


    OCR Scan
    3SK245 3SK245 PDF

    P10-58

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. Unit: mm CM = 108 dB // (TYP.) @ f = 470 MHz, G r = -3 0 dB


    OCR Scan
    3SK230 SC-61) P10-58 PDF

    TRANSISTOR D 2398

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS = 23.0 dB TYP. @ = 900 MHz • High Power Gain G Ps • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)


    OCR Scan
    3SK134B TRANSISTOR D 2398 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK245 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain G • Low Noise Figure NF = 2.4 dB TYP. @ = 900 MHz ps = 23.0 dB TYP. (@ = 900 MHz)


    OCR Scan
    3SK245 PDF

    tpc8405

    Abstract: No abstract text available
    Text: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain-source ON resistance


    Original
    TPC8405 tpc8405 PDF

    3SK131

    Abstract: P12449EJ2V0DS00
    Text: DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS Unit: mm FEATURES • Suitable for use as RF amplifier in VHF TV tuner. +0.2 Gate1 to Source Voltage


    Original
    3SK131 3SK131 P12449EJ2V0DS00 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES • Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0 .0 5 pF T Y P .


    OCR Scan
    3SK131 PDF