TEST88
Abstract: No abstract text available
Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools
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TPC8A01
Qg17nC
TEST88
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TPC8A01
Abstract: No abstract text available
Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools
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TPC8A01
Qg17nC
TPC8A01
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TPC8A01
Abstract: No abstract text available
Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •
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TPC8A01
Qg17nC
TPC8A01
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TPC8A01
Abstract: MARKING 3AB
Text: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •
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TPC8A01
Qg17nC
TPC8A01
MARKING 3AB
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d1595
Abstract: 2SK1108
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1108 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK1108 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance
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2SK1108
2SK1108
d1595
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2SK660
Abstract: 2SK66
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance
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2SK660
2SK660
2SK66
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2SK660
Abstract: No abstract text available
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance
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2SK660
2SK660
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2SK3719
Abstract: TRANSISTOR BJ 026 drain
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3719 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.3 ±0.05 0.13 –0.05 • Compact package • High forward transfer admittance
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2SK3719
2SK3719
TRANSISTOR BJ 026
drain
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Bft46
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic
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BFT46
MAM385
R77/02/pp11
Bft46
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D1629
Abstract: 2SK3653
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3653 is suitable for converter of ECM. +0.1 0.3 ±0.05 0.13 –0.05 FEATURES
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2SK3653
2SK3653
D1629
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transistor NEC 2SK2552B
Abstract: 2SK2552B SC-75 D17282
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552B is suitable for converter of ECM. 0.3 +0.1 –0 General-purpose product.
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2SK2552B
2SK2552B
SC-75
transistor NEC 2SK2552B
SC-75
D17282
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CRS15
Abstract: BFT46
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic
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BFT46
MAM385
R77/02/pp11
CRS15
BFT46
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2SK3782
Abstract: D17001 NEC PART NUMBER MARKING
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3782 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3782 is suitable for converter of ECM. 1.2 ±0.1 +0.1 0.3 –0.05 MAX. 0.33
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2SK3782
2SK3782
3pXSOF03
D17001
NEC PART NUMBER MARKING
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Contact Electronics
Abstract: 2SK4028
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK4028 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4028 is suitable for converter of ECM. 1.2 ±0.1 +0.1 0.3 –0.05 MAX. 0.33
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2SK4028
2SK4028
3pXSOF03
Contact Electronics
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D1594
Abstract: 2SK2552 SC-75 J3300
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552 is suitable for converter of ECM. 0.3 +0.1 –0 0.15 +0.1 –0.05 FEATURES
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2SK2552
2SK2552
SC-75
D1594
SC-75
J3300
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D1594
Abstract: 2SK3230 SC-89
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230 is suitable for converter of ECM. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES
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2SK3230
2SK3230
SC-89
D1594
SC-89
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transistor NEC 2SK2552
Abstract: 2sk2552 j7 D1594 2SK2552 SC-75
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552 is suitable for converter of ECM. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES
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2SK2552
2SK2552
SC-75
transistor NEC 2SK2552
2sk2552 j7
D1594
SC-75
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Contact Electronics
Abstract: 2SK4027
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK4027 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4027 is suitable for converter of ECM. 0.4 +0.1 –0.05 2.0 MIN. FEATURES • High gain
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2SK4027
2SK4027
SC-59
Contact Electronics
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marking AE
Abstract: 2SK3718 SC-89 NEC JAPAN
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3718 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.3 ±0.05 0.1–0.05 0.4 The 2SK3718 is suitable for converter of ECM. • Compact package
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2SK3718
2SK3718
SC-89
marking AE
SC-89
NEC JAPAN
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2SK3653B
Abstract: 2SK3653
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3653B is suitable for converter of ECM. 0.13 +0.1 –0.05 0.3 ±0.05 0.2 General-purpose product.
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2SK3653B
2SK3653B
2SK3653
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2SK3230B
Abstract: SC-89
Text: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3230B is suitable for converter of ECM. +0.1 0.3 ±0.05 0.1–0.05 0.4 General-purpose product.
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2SK3230B
2SK3230B
SC-89
SC-89
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CMUDM7001
Abstract: mosfet low vgs
Text: CMUDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed
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CMUDM7001
CMUDM7001
OT-523
100mA
mosfet low vgs
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3N128
Abstract: No abstract text available
Text: Order this document by 3N128/D MOTOROLA M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTOR N-CHANNEL MOS FIELD-EFFECT TRANSISTOR . . . designed for VHF amplifier and oscillator applications in com munications equipment.
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OCR Scan
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3N128/D_
3N128
5000/imhos
3N128/D
3N128/D
3N128
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TPC8A01
Abstract: MARKING J1A 4X25 pdii
Text: T O S H IB A TPC8A01 01:TOSH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U—MOS DI 0 2:INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE( U - M O S M ) TENTATIVE TPC8A01 DC-DC CONVERTER NOTE BOOK PC PORTABLE MACHINES AND TOOLS
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OCR Scan
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TPC8A01
TPC8A01
MARKING J1A
4X25
pdii
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PDF
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